Abstract: A networking PLC core comprising a program for uniting a programmable logic controller function to a fourth transport layer and a fifth session layer in compliance with network communication specifications in an OSI reference network model embedded therein, and a single or plural ICs or modules for exclusive use which are configured to store, manage and execute the program.

Abstract: There is disclosed a method and apparatus for forming a thin film of a composite metal compound. Independent targets formed of at least two different metals are sputtered so as to form on a substrate an ultra-thin film of a composite metal or an incompletely-reacted composite metal. The ultra-thin film is irradiated with the electrically neutral, activated species of a reactive gas so as to convert the composite metal or the incompletely-reacted composite metal to a composite metal compound through the reaction of the ultra-thin film with the activated species of the reactive gas. The formation of the ultra-thin film and the conversion to the composite metal compound are sequentially repeated so as to form on the substrate a thin film of the composite metal compound having a desired thickness.

Abstract: The present invention is drawn to an apparatus for forming a thin film. The apparatus includes a vacuum chamber; a vacuum apparatus connected to the vacuum chamber; a holder placed in the vacuum chamber, which holder holds a substrate and is rotated by means of a rotating mechanism; a plasma CVD apparatus; and a sputtering apparatus, wherein the plasma CVD apparatus and the sputtering apparatus are placed in a single vacuum chamber and a thin film having an medium refractive index is formed on the substrate held by the holder, by means of the plasma CVD apparatus and the sputtering apparatus. The method making use of such an apparatus is also disclosed.

Abstract: There is disclosed a method and apparatus for forming a thin film of a composite metal compound. Independent targets formed of at least two different metals are sputtered so as to form on a substrate an ultra-thin film of a composite metal or an incompletely-reacted composite metal. The ultra-thin film is irradiated with the electrically neutral, activated species of a reactive gas so as to convert the composite metal or the incompletely-reacted composite metal to a composite metal compound through the reaction of the ultra-thin film with the activated species of the reactive gas. The formation of the ultra-thin film and the conversion to the composite metal compound are sequentially repeated so as to form on the substrate a thin film of the composite metal compound having a desired thickness.

Abstract: A method for forming a thin film of a metal compound is disclosed. Within a vacuum chamber, a metallic ultra-thin film of a metal or an incompletely-reacted metal is deposited on a substrate. The metallic ultra-thin film is brought in contact with the electrically neutral activated species of a reactive gas so as to convert the metallic ultra-thin film to an ultra-thin film of a metal compound through the reaction of the metallic ultra-thin film with the activated species of the reactive gas. The above-described steps are sequentially repeated so as to deposit on the substrate the ultra-thin film of the metal compound in layers until a thin film of the metal compound having a desired thickness is formed on the substrate.

Abstract: There is disclosed a method and apparatus for forming a thin film of a composite metal compound. Independent targets formed of at least two different metals are sputtered so as to form on a substrate an ultra-thin film of a composite metal or an incompletely-reacted composite metal. The ultra-thin film is irradiated with the electrically neutral, activated species of a reactive gas so as to convert the composite metal or the incompletely-reacted composite metal to a composite metal compound through the reaction of the ultra-thin film with the activated species of the reactive gas. The formation of the ultra-thin film and the conversion to the composite metal compound are sequentially repeated so as to form on the substrate a thin film of the composite metal compound having a desired thickness.

Abstract: A method for forming a thin film of a metal compound is disclosed. Within a vacuum chamber, a metallic ultra-thin film of a metal or an incompletely-reacted metal is deposited on a substrate. The metallic ultra-thin film is brought in contact with the electrically neutral activated species of a reactive gas so as to convert the metallic ultra-thin film to an ultra-thin film of a metal compound through the reaction of the metallic ultra-thin film with the activated species of the reactive gas. The above-described steps are sequentially repeated so as to deposit on the substrate the ultra-thin film of the metal compound in layers until a thin film of the metal compound having a desired thickness is formed on the substrate.

Abstract: A method and apparatus for recording an operating status of an NC processing machine is provided. Measuring and recording operations can be performed with trial processing and actual processing distinguishing from each other. In order to record the operating status in a case where an NC apparatus is controlled to cause an NC processing machine i.e. a press brake, to perform continuous processing according to a processing program, a processing condition for a work used in previous processing is stored in a memory. A comparison/decision unit decides whether a processing condition for a work used in current processing coincides with the stored processing condition of the work in the previous processing. If the current processing condition coincides with the previous processing condition, a recording unit records the current processing as actual processing.

Abstract: An obstacle layer is grown on an inner surface of a mask structure defining a first opening over a first area assigned to a thick field oxide layer during a growth of the thick field oxide layer, and prevents a silicon substrate beneath a peripheral area of the thick field oxide layer from a dopant impurity implanted through the thick field oxide layer into the silicon substrate beneath the central area of the thick field oxide layer so that a channel stopper is never exposed to a major surface of the silicon substrate outside of the thick field oxide layer.

Abstract: In a bender (e.g., press brake), work (plate material) can be bent by a bending tool composed of a pair of punch and die. A position detector (17) mounted on a movable side of the bending tool generates a limit point pulse (ULi) whenever the tool reaches a limit point. A timer (29) measures a time interval between the two limit point pulses (ULi). A time compare discriminate section (31) compares the time interval measured by the timer with a reference time interval (TR), and further discriminates the current bending as a trial bending when the time interval is longer than the reference time but as an actual bending when shorter than the reference time. Further, an arithmetic section 33 calculates a sum total number of times of the bending and the sum total time period spent in the bendings, separately in both of the trial and actual bendings. The obtained bending data are displayed or recorded to obtain an accurate man-hour in the bending processing.

Abstract: In a bender (e.g., press brake), work (plate material) can be bent by a bending tool composed of a pair of punch and die. A position detector (17) mounted on a movable side of the bending tool generates a limit point pulse (ULi) whenever the tool reaches a limit point. A timer (29) measures a time interval between the two limit point pulses (ULi). A time compare discriminate section (31) compares the time interval measured by the time with a reference time interval (TR), and further discriminates the current bending as trial bending when the time interval is longer than the reference time but as an actual bending when shorter than the reference time. Further, an arithmetic section 33 calculates a sum total number of times of the bending and the sum total time period spent in the bendings, separately in both of the trial and actual bendings. The obtained bending data are displayed or recorded to obtain an accurate man-hour in the bending processing.

Abstract: A computer system for entering, processing and recording sales of items is provided, which is especially suitable for use in retail sales, particularly quick service restaurants. The system includes a plurality of programmable POS registers for entering and tabulating customer orders, an off-line processor for programming the programmable POS registers, shared memory for recording data entered and tabulated by the programmable POS registers, and a communication structure for networking a plurality of programmable POS registers, the off-line processor and the shared memory. In one embodiment, the system includes an access control system for enabling access to the POS registers, the off-line processor or the shared memory if operation of those are authorized.

Abstract: A photoresist mask composed of a plurality of isolated plane patterns having no opening is formed on a main surface of a semiconductor substrate. The breakdown of the gate oxide film due to charge build up can be prevented because no photoresist mask opening patterning is involved.