Abstract: Provided are a thin circuit device with show-through of thin metal wires prevented and a method of manufacturing the circuit device. A circuit device mainly includes: a substrate including a first substrate and second substrates; pads formed respectively on upper surfaces of the second substrates; a semiconductor element fixed on an upper surface of the first substrate; thin metal wires each connecting the semiconductor elements and a corresponding one of the pads; and a sealing resin with which the semiconductor element and the thin metal wires are covered, and which thereby seals the circuit device with the semiconductor element and the thin metal wires disposed therein. Furthermore, filler particles located in the uppermost portion of the sealing resin are covered with a resin material constituting the sealing resin.

Abstract: Provided is a method for manufacturing a semiconductor device in which movement of an island in resin sealing is prevented. A molding die includes an upper die and a lower die. The upper and lower dies are fitted together to form cavities and runners. In the lower die, a pod is provided. After heating and melting of a tablet made of a solid resin and housed in the pod, the melted sealing resin is pressurized by a plunger, and is supplied to each of the cavities. Specifically, a liquid sealing resin is supplied from the pod to the cavities, sequentially, from the upstream of the flow of the sealing resin supplied from the pod. The cavities communicate with each other through the runners. Furthermore, the runners through which the cavities communicate are provided to be tilted with respect to a path for supplying the sealing resin.

Abstract: Provided is a method for manufacturing a semiconductor device in which movement of an island in resin sealing is prevented. A molding die includes an upper die and a lower die. The upper and lower dies are fitted together to form cavities and runners. In the lower die, a pod is provided. After heating and melting of a tablet made of a solid resin and housed in the pod, the melted sealing resin is pressurized by a plunger, and is supplied to each of the cavities. Specifically, a liquid sealing resin is supplied from the pod to the cavities, sequentially, from the upstream of the flow of the sealing resin supplied from the pod. The cavities communicate with each other through the runners. Furthermore, the runners through which the cavities communicate are provided to be tilted with respect to a path for supplying the sealing resin.

Abstract: Provided are a thin circuit device with show-through of thin metal wires prevented and a method of manufacturing the circuit device. A circuit device mainly includes: a substrate including a first substrate and second substrates; pads formed respectively on upper surfaces of the second substrates; a semiconductor element fixed on an upper surface of the first substrate; thin metal wires each connecting the semiconductor elements and a corresponding one of the pads; and a sealing resin with which the semiconductor element and the thin metal wires are covered, and which thereby seals the circuit device with the semiconductor element and the thin metal wires disposed therein. Furthermore, filler particles located in the uppermost portion of the sealing resin are covered with a resin material constituting the sealing resin.

Abstract: A conventional one-chip dual MOSFET has a structure in which two chips are arranged side by side and drain electrodes are short-circuited. Therefore, the mounting area thereof is large, and the resistance between the drain electrodes cannot be reduced. Accordingly, there is a limit of reduction in size and thickness of a semiconductor device, which is demanded by the market. A dual MOSFET of the embodiment includes two semiconductor chips (MOSFET) superimposed on each other with drain electrodes thereof directly connected to each other. In the dual MOSFET, the drain electrodes do not need to be led to the outside, and only two gate terminals and two source terminals are used. Accordingly, these four terminals are led out by means of a lead frame or conductive patterns. This allows the device to be reduced in size and to have lower on-resistance.

Abstract: A conventional one-chip dual MOSFET has a structure in which two chips are arranged side by side and drain electrodes are short-circuited. Therefore, the mounting area thereof is large, and the resistance between the drain electrodes cannot be reduced. Accordingly, there is a limit of reduction in size and thickness of a semiconductor device, which is demanded by the market. A dual MOSFET of the embodiment includes two semiconductor chips (MOSFET) superimposed on each other with drain electrodes thereof directly connected to each other. In the dual MOSFET, the drain electrodes do not need to be led to the outside, and only two gate terminals and two source terminals are used. Accordingly, these four terminals are led out by means of a lead frame or conductive patterns. This allows the device to be reduced in size and to have lower on-resistance.