Patents by Inventor SHIGEHIRO IKEHARA
SHIGEHIRO IKEHARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145507Abstract: Provided is an imaging device capable of further suppressing color mixing between pixels. The imaging device includes: a semiconductor substrate provided with a photoelectric conversion unit for each of pixels two-dimensionally arranged; a color filter provided for each of the pixels on the semiconductor substrate; an intermediate layer provided between the semiconductor substrate and the color filter; and a low refraction region provided between the pixels by separating at least the color filter and the intermediate layer for each of the pixels, the low refraction region having a refractive index lower than a refractive index of the color filter.Type: ApplicationFiled: February 4, 2022Publication date: May 2, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Koji SEKIGUCHI, Kaito YOKOCHI, Takayuki OGASAHARA, Shigehiro IKEHARA, Chigusa YAMANE, Hideki KOBAYASHI, Hiroshi SAITO
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Publication number: 20240120359Abstract: The present disclosure relates to a photodetection device and an electronic apparatus that allow for reducing surface reflection from an on-chip microlens and suppressing deterioration of image quality. Provided is a photodetection device including: a plurality of pixels that have photoelectric conversion units; on-chip microlenses that are formed in such a way as to correspond to the individual pixels; and an antireflection film that is formed on a surface of the on-chip microlens, in which the antireflection film is constituted by a stacking of: a first inorganic film that is formed by a metal oxide film; and a second inorganic film that is formed on a surface of the first inorganic film and has a lower refractive index than the first inorganic film. The present disclosure can be applied to, for example, a CMOS solid-state imaging device.Type: ApplicationFiled: February 21, 2022Publication date: April 11, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke MORIYA, Atsushi YAMAMOTO, Tomiyuki YUKAWA, Kotaro NISHIMURA, Shigehiro IKEHARA, Shogo OTANI, Hiroshi KATO
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Publication number: 20240006438Abstract: There is provided an imaging device capable of reducing sensitivity unevenness of a pixel located near a boundary between a pixel section and an optical black section. An imaging device includes a semiconductor layer, a pixel section that is provided in the semiconductor layer and receives light from an object, an optical black section that is provided in the semiconductor layer and includes a light shielding film that shields light, a color filter provided on one surface side of the semiconductor layer, and a low refractive index material that is provided on one surface side of the semiconductor layer and has a refractive index lower than a refractive index of the color filter. The pixel section and the optical black section are adjacent to each other. The low refractive index material is disposed between filter components of the color filter in the pixel section, and is not disposed in the optical black section.Type: ApplicationFiled: November 9, 2021Publication date: January 4, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Itaru OSHIYAMA, Shigehiro IKEHARA
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Publication number: 20230223420Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.Type: ApplicationFiled: January 18, 2023Publication date: July 13, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shuji MANDA, Ryosuke MATSUMOTO, Suguru SAITO, Shigehiro IKEHARA, Tetsuji YAMAGUCHI, Shunsuke MARUYAMA
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Patent number: 11616093Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.Type: GrantFiled: December 12, 2018Date of Patent: March 28, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shuji Manda, Ryosuke Matsumoto, Suguru Saito, Shigehiro Ikehara, Tetsuji Yamaguchi, Shunsuke Maruyama
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Publication number: 20230005978Abstract: It is possible to curb noise, color mixing, and the like.Type: ApplicationFiled: December 1, 2020Publication date: January 5, 2023Inventors: NAO YOSHIMOTO, YUKI MIYANAMI, SHIGEHIRO IKEHARA
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Publication number: 20220415958Abstract: A solid-state imaging element (1) according to the present disclosure includes a photoelectric conversion unit (42) that converts incident light (L) into an electrical signal, and a stacked film group (43) provided on a light incident side of the photoelectric conversion unit (42). The stacked film group (43) is formed by stacking a plurality of stacked films (43a) formed by stacking thin films of different materials (M1, M2). An entire film thickness of the stacked film (43a) is smaller than a wavelength of the incident light (L).Type: ApplicationFiled: November 27, 2020Publication date: December 29, 2022Inventor: SHIGEHIRO IKEHARA
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Patent number: 11127910Abstract: An imaging device according to the disclosure includes: a semiconductor substrate including an effective pixel region in which a plurality of pixels are disposed, and a peripheral region provided around the effective pixel region; an organic photoelectric conversion layer provided on side of the semiconductor substrate on which a light receiving surface is disposed; a first sealing layer provided on the semiconductor substrate; a recess provided in the first sealing layer on the effective pixel region; and a light shielding film provided on the first sealing layer on the peripheral region.Type: GrantFiled: February 15, 2017Date of Patent: September 21, 2021Assignee: SONY CORPORATIONInventors: Masahiro Joei, Shigehiro Ikehara, Shuji Manda
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Publication number: 20210013254Abstract: The present technology relates to a solid-state imaging device capable of protecting a photoelectric conversion film with a sealing film that has excellent sealing properties and coverage, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and a sealing film that is formed on the upper layer of the photoelectric conversion film and has a lower etching rate than that of silicon oxide. The present technology can be applied to solid-state imaging devices having a photoelectric conversion film on the upper side of a semiconductor substrate, and the like, for example.Type: ApplicationFiled: July 27, 2020Publication date: January 14, 2021Inventors: SHIGEHIRO IKEHARA, MASAHIRO JOEI
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Publication number: 20200321386Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.Type: ApplicationFiled: December 12, 2018Publication date: October 8, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shuji MANDA, Ryosuke MATSUMOTO, Suguru SAITO, Shigehiro IKEHARA, Tetsuji YAMAGUCHI, Shunsuke MARUYAMA
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Publication number: 20200303666Abstract: An imaging device according to the disclosure includes: a semiconductor substrate including an effective pixel region in which a plurality of pixels are disposed, and a peripheral region provided around the effective pixel region; an organic photoelectric conversion layer provided on side of the semiconductor substrate on which a light receiving surface is disposed; a first sealing layer provided on the semiconductor substrate; a recess provided in the first sealing layer on the effective pixel region; and a light shielding film provided on the first sealing layer on the peripheral region.Type: ApplicationFiled: February 15, 2017Publication date: September 24, 2020Inventors: MASAHIRO JOEI, SHIGEHIRO IKEHARA, SHUJI MANDA
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Patent number: 10756132Abstract: The present technology relates to a solid-state imaging device capable of protecting a photoelectric conversion film with a sealing film that has excellent sealing properties and coverage, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and a sealing film that is formed on the upper layer of the photoelectric conversion film and has a lower etching rate than that of silicon oxide. The present technology can be applied to solid-state imaging devices having a photoelectric conversion film on the upper side of a semiconductor substrate, and the like, for example.Type: GrantFiled: March 15, 2017Date of Patent: August 25, 2020Assignee: SONY CORPORATIONInventors: Shigehiro Ikehara, Masahiro Joei
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Publication number: 20190115384Abstract: The present technology relates to a solid-state imaging device capable of protecting a photoelectric conversion film with a sealing film that has excellent sealing properties and coverage, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and a sealing film that is formed on the upper layer of the photoelectric conversion film and has a lower etching rate than that of silicon oxide. The present technology can be applied to solid-state imaging devices having a photoelectric conversion film on the upper side of a semiconductor substrate, and the like, for example.Type: ApplicationFiled: March 15, 2017Publication date: April 18, 2019Applicant: SONY CORPORATIONInventors: SHIGEHIRO IKEHARA, MASAHIRO JOEI