Patents by Inventor Shigehiro Nishino
Shigehiro Nishino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7671546Abstract: To provide a voltage division resistor for acceleration tube, an acceleration tube, and an accelerator capable of reducing the cost of the acceleration tube and enhancing the operation efficiency.Type: GrantFiled: August 25, 2005Date of Patent: March 2, 2010Assignee: Kyoto Institute of TechnologyInventors: Shigehiro Nishino, Ryoichi Ono
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Patent number: 7544249Abstract: From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the ?-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter ?-SiC single crystal wafer.Type: GrantFiled: June 30, 2003Date of Patent: June 9, 2009Assignee: Mitsui Engineering Co. Ltd.Inventors: Shigehiro Nishino, Kazutoshi Murata
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Publication number: 20090039804Abstract: To provide a voltage division resistor for acceleration tube, an acceleration tube, and an accelerator capable of reducing the cost of the acceleration tube and enhancing the operation efficiency.Type: ApplicationFiled: August 25, 2005Publication date: February 12, 2009Applicant: KYOTO INSTITUTE OF TECHNOLOGYInventors: Shigehiro Nishino, Ryoichi Ono
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Publication number: 20080067411Abstract: It is a technical challenge to provide a small-sized ion source excellent in operability.Type: ApplicationFiled: July 20, 2007Publication date: March 20, 2008Applicant: KYOTO INSTITUTE OF TECHNOLOGYInventors: Shigehiro Nishino, Ryoichi Ono
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Publication number: 20060097266Abstract: From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the ?-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter ?-SiC single crystal wafer.Type: ApplicationFiled: June 30, 2003Publication date: May 11, 2006Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTDInventors: Shigehiro Nishino, Kazutoshi Murata
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Patent number: 6995036Abstract: The present invention has its object to make it possible to produce an ?-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles 11a, 11b, 11c, and so on, a ?-SiC substrate 19 and an SiC raw material 17 are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube 40. The radiation tube 40 is heated by an induction heating coil 23, radiates radiation heat, and uniformly heats the crucibles 11a, 11b, 11c and so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the ?-SiC substrate 19.Type: GrantFiled: May 24, 2002Date of Patent: February 7, 2006Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.Inventors: Shigehiro Nishino, Kazutoshi Murata, Yoshiharu Chinone
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Publication number: 20040241343Abstract: The present invention has its object to make it possible to produce an &agr;-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles 11a, 11b, 11c, and so on, a &bgr;-SiC substrate 19 and an SiC raw material 17 are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube 40. The radiation tube 40 is heated by an induction heating coil 23, radiates radiation heat, and uniformly heats the crucibles 11a, 11b, 11c and so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the &bgr;-SiC substrate 19.Type: ApplicationFiled: January 23, 2004Publication date: December 2, 2004Inventors: Shigehiro Nishino, Kazutoshi Murata, Yoshiharu Chinone
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Patent number: 6391109Abstract: An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.Type: GrantFiled: December 29, 2000Date of Patent: May 21, 2002Assignees: Sumitomo Electric Industries, Ltd.Inventors: Hiromu Shiomi, Shigehiro Nishino
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Patent number: 6336971Abstract: A silicon carbide single crystal is produced by allowing a vapor evaporated from a silicon raw material to pass through a heated carbon member and then reach a seed crystal substrate on which a silicon carbide single crystal grows. For this production, an apparatus is used, which has a reaction tube, a heating device and a graphite crucible, wherein the lower part of the crucible constitutes a silicon raw material-charging part; a seed crystal substrate is situated at the top of the crucible; and a carbon member, through which the vapor evaporated from a silicon raw material in capable of passing, is disposed intermediately between the silicon raw material-charging part and the seed crystal. As the carbon member, a porous carbon structure, a carbon plate having a plurality of through holes and a carbon particle-packed layer can be mentioned.Type: GrantFiled: March 13, 2000Date of Patent: January 8, 2002Assignee: Showa Denko Kabushiki KaishaInventors: Nobuyuki Nagato, Kunio Komaki, Isamu Yamamoto, Naoki Oyanagi, Shigehiro Nishino
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Publication number: 20010000864Abstract: An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.Type: ApplicationFiled: December 29, 2000Publication date: May 10, 2001Inventors: Hiromu Shiomi, Shigehiro Nishino
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Patent number: 6193797Abstract: An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.Type: GrantFiled: January 15, 1999Date of Patent: February 27, 2001Assignees: Sumitomo Electric Industries, Ltd.Inventors: Hiromu Shiomi, Shigehiro Nishino
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Patent number: 6136093Abstract: An apparatus comprises a Ga-disposing section in which Ga is disposed; a seed-crystal-disposing section in which a seed crystal of GaN is disposed; a synthesis vessel adapted to accommodate the Ga-disposing section, the seed-crystal-disposing section, and a gas containing nitrogen; heating means adapted to heat the Ga-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Ga to an evaporation temperature of Ga or higher and heating the seed crystal to a temperature higher than that of the Ga, wherein the Ga evaporated by the heating means is adapted to react with the nitrogen of a nitrogen component in the gas so as to yield a GaN-forming gas, the GaN-forming gas being adapted to reach the seed-crystal-disposing section.Type: GrantFiled: January 22, 1999Date of Patent: October 24, 2000Assignees: Sumitomo Electric Industries, Ltd., Shigehiro NishinoInventors: Hiromu Shiomi, Masami Tatsumi, Shigehiro Nishino