Abstract: A plurality of optical signals are arranged on optical frequency grids having a frequency spacing of ?f, a wavelength multiplexing optical signal includes at least one specific arrangement signal group, and the specific arrangement signal group includes Q S signal(s) and R P signal(s), where Q is an integer of 1 or more and R is an integer of 1 or more. A frequency difference between any pair of S signals included in the specific arrangement signal group is different from frequency differences between all of other pairs of S signals and frequency differences between all pairs of P signals, and a frequency difference between any pair of P signals included in the specific arrangement signal group is different from frequency differences between all pairs of S signals and frequency differences between all of other pairs of P signals.

Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.

Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.

Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.

Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.

Abstract: Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47?Wp/(Wp+Wd)?0.9.

Abstract: An electro-optic waveguide device may include a slot waveguide including a lower high-refractive-index layer with a first refractive index and an upper high-refractive-index layer with a second refractive index, wherein the lower high-refractive-index layer and the upper high-refractive-index layer have conductivity and are disposed to face each other with a gap; and a slot part formed as a low-refractive-index layer, wherein the low-refractive-index layer is formed of a material producing an electro-optic effect and has a third refractive index lower than the first refractive index and the second refractive index, wherein the low-refractive-index layer is formed in the gap to come into contact with the lower high-refractive-index layer and the upper high-refractive-index layer, and wherein one of the lower high-refractive-index layer or the upper high-refractive-index layer includes a stretch stretching on both sides of a contact portion with the slot part in a width direction intersecting a transmission dir

Abstract: An optical subassembly may have an optical waveguide for transmitting an optical signal, a lens element with a lens and a mirror integrated, a supporting element to which the optical waveguide and the lens element are attached, an optical element for converting the optical signal and an electric signal from one to another at least, and a substrate to which the optical element and the supporting element are attached.

Abstract: An electro-optic waveguide device may include a slot waveguide including a lower high-refractive-index layer with a first refractive index and an upper high-refractive-index layer with a second refractive index, wherein the lower high-refractive-index layer and the upper high-refractive-index layer have conductivity and are disposed to face each other with a gap; and a slot part formed as a low-refractive-index layer, wherein the low-refractive-index layer is formed of a material producing an electro-optic effect and has a third refractive index lower than the first refractive index and the second refractive index, wherein the low-refractive-index layer is formed in the gap to come into contact with the lower high-refractive-index layer and the upper high-refractive-index layer, and wherein one of the lower high-refractive-index layer or the upper high-refractive-index layer includes a stretch stretching on both sides of a contact portion with the slot part in a width direction intersecting a transmission dir

Abstract: An optical subassembly may have an optical waveguide for transmitting an optical signal, a lens element with a lens and a mirror integrated, a supporting element to which the optical waveguide and the lens element are attached, an optical element for converting the optical signal and an electric signal from one to another at least, and a substrate to which the optical element and the supporting element are attached.

Abstract: Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47?Wp/(Wp+Wd)?0.9.

Abstract: An optical module includes a semiconductor laser with an active layer disproportionately positioned closer to the first surface. The semiconductor laser includes a reflector for reflecting the light outgoing from the active layer in a direction along the first surface toward another direction. The active layer and the reflector are monolithically integrated in the semiconductor laser. The optical module includes a carrier formed from a light transmissive material and having a third surface and a fourth surface opposite to each other. The semiconductor laser is mounted on the carrier so as for the light to enter the third surface. The carrier has a lens integrally on the fourth surface. The optical module includes a substrate having an optical waveguide and an optical coupler for guiding the light to the optical waveguide. The optical waveguide and the optical coupler are integrated in the substrate.

Abstract: An optical module includes a semiconductor optical device in which an active layer located at one side, an electrode located at the same side, and a mirror that reflects light toward the side opposite the electrode are monolithically integrated, a sub-mount having one surface on which a first wiring pattern is formed, a substrate in which an optical waveguide and a grating coupler are formed in a surface layer of the substrate, a spacer having an upper surface on which a second wiring pattern is formed, and a wire. The sub-mount is mounted on the spacer. The first wiring pattern on the sub-mount faces part of the second wiring pattern on the spacer and is electrically connected thereto. The second wiring pattern on the spacer includes a pad being disposed in a region exposed from the sub-mount and being bonded to the wire.

Abstract: An optical module includes a semiconductor laser with an active layer disproportionately positioned closer to the first surface. The semiconductor laser includes a reflector for reflecting the light outgoing from the active layer in a direction along the first surface toward another direction. The active layer and the reflector are monolithically integrated in the semiconductor laser. The optical module includes a carrier formed from a light transmissive material and having a third surface and a fourth surface opposite to each other. The semiconductor laser is mounted on the carrier so as for the light to enter the third surface. The carrier has a lens integrally on the fourth surface. The optical module includes a substrate having an optical waveguide and an optical coupler for guiding the light to the optical waveguide. The optical waveguide and the optical coupler are integrated in the substrate.

Abstract: An optical module includes a semiconductor optical device in which an active layer located at one side, an electrode located at the same side, and a mirror that reflects light toward the side opposite the electrode are monolithically integrated, a sub-mount having one surface on which a first wiring pattern is formed, a substrate in which an optical waveguide and a grating coupler are formed in a surface layer of the substrate, a spacer having an upper surface on which a second wiring pattern is formed, and a wire. The sub-mount is mounted on the spacer. The first wiring pattern on the sub-mount faces part of the second wiring pattern on the spacer and is electrically connected thereto. The second wiring pattern on the spacer includes a pad being disposed in a region exposed from the sub-mount and being bonded to the wire.

Abstract: An optical module includes a semiconductor optical device in which an active layer located at one side, an electrode located at the same side, and a mirror that reflects light toward the side opposite the electrode are monolithically integrated, a sub-mount having one surface on which a first wiring pattern is formed, a substrate in which an optical waveguide and a grating coupler are formed in a surface layer of the substrate, a spacer having an upper surface on which a second wiring pattern is formed, and a wire. The sub-mount is mounted on the spacer. The first wiring pattern on the sub-mount faces part of the second wiring pattern on the spacer and is electrically connected thereto. The second wiring pattern on the spacer includes a pad being disposed in a region exposed from the sub-mount and being bonded to the wire.

Abstract: An optical module includes a semiconductor optical device in which an active layer located at one side, an electrode located at the same side, and a mirror that reflects light toward the side opposite the electrode are monolithically integrated, a sub-mount having one surface on which a first wiring pattern is formed, a substrate in which an optical waveguide and a grating coupler are formed in a surface layer of the substrate, a spacer having an upper surface on which a second wiring pattern is formed, and a wire. The sub-mount is mounted on the spacer. The first wiring pattern on the sub-mount faces part of the second wiring pattern on the spacer and is electrically connected thereto. The second wiring pattern on the spacer includes a pad being disposed in a region exposed from the sub-mount and being bonded to the wire.

Abstract: The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object.

Abstract: In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.

Abstract: The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object.