Patents by Inventor Shigehisa Todoko

Shigehisa Todoko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10366870
    Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: July 30, 2019
    Assignee: TOSOH CORPORATION
    Inventors: Shigehisa Todoko, Kimiaki Tamano, Kenichi Itoh, Tetsuo Shibutami
  • Publication number: 20160141159
    Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.
    Type: Application
    Filed: December 28, 2015
    Publication date: May 19, 2016
    Applicant: TOSOH CORPORATION
    Inventors: Shigehisa TODOKO, Kimiaki TAMANO, Kenichi ITOH, Tetsuo SHIBUTAMI
  • Patent number: 9127352
    Abstract: Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials. A multi-divided cylindrical sputtering target formed by bonding a cylindrical base and a plurality of cylindrical target materials together with a bonding material has a divided portion where adjacent cylindrical target materials are arranged with a gap therebetween, while outer peripheral faces of the adjacent cylindrical target materials have a step of 0.5 mm or less therebetween in the divided portion. Such a target is obtained by fixing the cylindrical target materials with reference to the outer peripheral faces of the cylindrical target materials when arranging the cylindrical target materials with reference to the cylindrical base.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: September 8, 2015
    Assignee: TOSOH CORPORATION
    Inventors: Kenichi Itoh, Kimiaki Tamano, Shigehisa Todoko, Tetsuo Shibutami
  • Patent number: 8828198
    Abstract: To provide a cylindrical sputtering target, whereby cracking during sputtering can be remarkably reduced. A cylindrical sputtering target, wherein a cylindrical target material made of ITO or AZO has a relative density of at least 90%; the angle between the grinding direction on its outer circumferential surface and a straight line parallel with its cylindrical axis (out of such angles, ? represents an angle between 0° and 90°) satisfies 45°<??90° or tan ?>?R/L (where R is an outside diameter of the cylindrical target material, and L is the length of the cylindrical target material); and the surface roughness Ra of the outer circumferential surface of the cylindrical target material is at most 3 ?m.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: September 9, 2014
    Assignee: Tosoh Corporation
    Inventors: Shigehisa Todoko, Kenichi Itoh, Tetsuo Shibutami
  • Publication number: 20110240467
    Abstract: Provided is a cylindrical sputtering target which attains a high production yield in a film-forming process even when a film is formed by sputtering with a long cylindrical sputtering target constituted by a plurality of cylindrical target materials. A multi-divided cylindrical sputtering target formed by bonding a cylindrical base and a plurality of cylindrical target materials together with a bonding material has a divided portion where adjacent cylindrical target materials are arranged with a gap therebetween, while outer peripheral faces of the adjacent cylindrical target materials have a step of 0.5 mm or less therebetween in the divided portion. Such a target is obtained by fixing the cylindrical target materials with reference to the outer peripheral faces of the cylindrical target materials when arranging the cylindrical target materials with reference to the cylindrical base.
    Type: Application
    Filed: September 18, 2009
    Publication date: October 6, 2011
    Applicant: TOSOH CORPORATION
    Inventors: Kenichi Itoh, Kimiaki Tamano, Shigehisa Todoko, Tetsuo Shibutami
  • Publication number: 20110100808
    Abstract: Provided is a cylindrical ceramic sputtering target, which significantly reduces the occurrence of a crack, a chip, extraordinary discharge and a nodule. By filling a molten bonding material in a cavity defined by a cylindrical ceramic target material and a cylindrical base material, starting cooling the molten bonding material from its one end toward its other end in a cylindrical axial direction in sequence, and further filling the molten bonding material in the cavity during cooling, a cylindrical ceramic sputtering target is manufactured so as to be characterized in that as observed by an X-ray radiograph of the bonding material, the total area of portions where no bonding material exists is 10 cm2 or less per 50 cm2 of X-ray radiograph area, and the maximum area of the portions where no bonding material exists is 9 cm2 or less.
    Type: Application
    Filed: June 9, 2009
    Publication date: May 5, 2011
    Inventors: Shigehisa Todoko, Kimiaki Tamano, Kenichi Itoh, Tetsuo Shibutami
  • Publication number: 20100326823
    Abstract: To provide a cylindrical sputtering target, whereby cracking during sputtering can be remarkably reduced. A cylindrical sputtering target, wherein a cylindrical target material made of ITO or AZO has a relative density of at least 90%; the angle between the grinding direction on its outer circumferential surface and a straight line parallel with its cylindrical axis (out of such angles, ? represents an angle between 0° and 90°) satisfies 45°<??90° or tan ?>?R/L (where R is an outside diameter of the cylindrical target material, and L is the length of the cylindrical target material); and the surface roughness Ra of the outer circumferential surface of the cylindrical target material is at most 3 ?m.
    Type: Application
    Filed: July 1, 2008
    Publication date: December 30, 2010
    Applicant: TOSOH CORPORATION
    Inventors: Shigehisa Todoko, Kenichi Itoh, Tetsuo Shibutami