Abstract: A nonreciprocal circuit device includes a ferrite-magnet element having ferrite provided with first and second central electrodes intersecting each other in an insulated manner and two permanent magnets arranged to sandwich the ferrite to apply a DC magnetic field thereto, a substrate on which the ferrite-magnet element and matching circuit elements are mounted, and a flat plate yoke. A first resin layer made of a cured liquid resin is provided at bonding portions of the ferrite-magnet element to the substrate, and a second resin layer made of a cured soft sheet-shaped resin adhered to a rear surface of the flat plate yoke is provided around the ferrite-magnet element and the matching circuit elements.

Abstract: A nonreciprocal circuit device includes a ferrite-magnet element having ferrite provided with first and second central electrodes intersecting each other in an insulated manner and two permanent magnets arranged to sandwich the ferrite to apply a DC magnetic field thereto, a substrate on which the ferrite-magnet element and matching circuit elements are mounted, and a flat plate yoke. A first resin layer made of a cured liquid resin is provided at bonding portions of the ferrite-magnet element to the substrate, and a second resin layer made of a cured soft sheet-shaped resin adhered to a rear surface of the flat plate yoke is provided around the ferrite-magnet element and the matching circuit elements.

Abstract: A dielectric resonator device includes a dielectric plate. An electrode is provided on each of both principal surfaces of the dielectric plate and a plurality of pairs of mutually-opposing electrode openings are formed in the electrodes. Accordingly, the dielectric resonator device functions as a three-stage resonator. Strip lines serving as input/output probes are provided on the upper surface of an input/output substrate. Also, a ground electrode having electrode openings are formed thereon. By providing the dielectric resonator device and an upper substrate on the upper surface of the input/output substrate, a dielectric filter is formed.

Abstract: Resonator electrodes are provided on the upper face of a dielectric substrate. The ratios (W1/L1) and (W3/L3) of the electrode widths W1 and W3 to the electrode lengths L1 and L3 of the resonator electrodes of the first and last stages are set at substantially 1.05<W/L<1.95. Lead-out electrodes are connected to the resonator electrodes of the first and last stages on the opposite sides of the center axis which is a straight-line axis passing through the center positions of the resonator electrodes of the first and last stages. Thereby, an attenuation pole is generated on the lower band side of the pass-band.

Abstract: A dielectric resonator device includes a dielectric plate. An electrode is provided on each of both principal surfaces of the dielectric plate and a plurality of pairs of mutually-opposing electrode openings are formed in the electrodes. Accordingly, the dielectric resonator device functions as a three-stage resonator. Strip lines serving as input/output probes are provided on the upper surface of an input/output substrate. Also, a ground electrode having electrode openings are formed thereon. By providing the dielectric resonator device and an upper substrate on the upper surface of the input/output substrate, a dielectric filter is formed.

Abstract: Resonator electrodes are provided on the upper face of a dielectric substrate. The ratios (W1/L1) and (W3/L3) of the electrode widths W1 and W3 to the electrode lengths L1 and L3 of the resonator electrodes of the first and last stages are set at substantially 1.05<W/L<1.95. Lead-out electrodes are connected to the resonator electrodes of the first and last stages on the opposite sides of the center axis which is a straight-line axis passing through the center positions of the resonator electrodes of the first and last stages. Thereby, an attenuation pole is generated on the lower band side of the pass-band.

Abstract: Resonator electrodes are provided on the upper face of a dielectric substrate. The ratios (W1/L1) and (W3/L3) of the electrode widths W1 and W3 to the electrode lengths L1 and L3 of the resonator electrodes of the first and last stages are set at substantially 1.05<W/L<1.95. Lead-out electrodes are connected to the resonator electrodes of the first and last stages on the opposite sides of the center axis which is a straight-line axis passing through the center positions of the resonator electrodes of the first and last stages. Thereby, an attenuation pole is generated on the lower band side of the pass-band.

Abstract: A conducting film is formed on a dielectric block in a dielectric waveguide resonator, and a through-hole is formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-hole as well as the outside dimensions of the dielectric block. A terminal electrode is formed on the outer surface of the dielectric block, for example at an end surface. A coupling hole is formed in the dielectric block and a coupling electrode is formed on the inner surface of the coupling hole. One end of the coupling electrode is connected to the terminal electrode and the other end of the coupling electrode may be connected to the conducting film formed on the outer surface of the dielectric block, for example at a side surface. The coupling electrode is non-linear, preferably L-shaped.

Abstract: A conducting film is formed on a dielectric block in a dielectric waveguide resonator, and a through-hole is formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-hole as well as the outside dimensions of the dielectric block. A terminal electrode is formed on a side surface of the dielectric block. A coupling hole is formed in the dielectric block and a coupling electrode is formed on the inner surface of the coupling hole. One end of the coupling electrode is connected to the terminal electrode and the coupling electrode extends toward the conducting film formed on the opposite side surface and one end surface of the dielectric block. The above structure allows an increase in the degree of freedom in the design of the characteristics including the resonance frequency and unloaded Q of the dielectric waveguide resonator.

Abstract: A dielectric duplexer or multiplexer in which a conducting film is formed on a dielectric block in a dielectric waveguide resonator, and a through-hole is formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-hole as well as the outside dimensions of the dielectric block. A terminal electrode is formed on the outer surface of the dielectric block. A coupling hole is formed in the dielectric block and a coupling electrode is formed on the inner surface of the coupling hole. One end of the coupling electrode is connected to the terminal electrode and the other end of the coupling electrode is either connected to the conducting film formed on the outer surface of the dielectric block or terminated inside the dielectric block.

Abstract: A dielectric duplexer or multiplexer in which a conducting film is formed on a dielectric block in a dielectric waveguide resonator, and a through-hole is formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-hole as well as the outside dimensions of the dielectric block. A terminal electrode is formed on the outer surface of the dielectric block. A coupling hole is formed in the dielectric block and a coupling electrode is formed on the inner surface of the coupling hole. One end of the coupling electrode is connected to the terminal electrode and the other end of the coupling electrode is either connected to the conducting film formed on the outer surface of the dielectric block or terminated inside the dielectric block.

Abstract: A conducting film is formed on a dielectric block in a dielectric waveguide resonator, and a through-hole is formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-hole as well as the outside dimensions of the dielectric block. A terminal electrode is formed on the outer surface of the dielectric block. A coupling hole is formed in the dielectric block and a coupling electrode is formed on the inner surface of the coupling hole. One end of the coupling electrode is connected to the terminal electrode and the other end of the coupling electrode is either connected to the conducting film formed on the outer surface of the dielectric block or terminated inside the dielectric block. The above structure allows an increase in the degree of freedom in the design of the characteristics including the resonance frequency and unloaded Q of the dielectric waveguide resonator.

Abstract: A conducting film is formed on a dielectric block in a dielectric waveguide resonator, and a through-hole is formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-hole as well as the outside dimensions of the dielectric block. A terminal electrode is formed on a side surface of the dielectric block. A coupling hole is formed in the dielectric block and a coupling electrode is formed on the inner surface of the coupling hole. One end of the coupling electrode is connected to the terminal electrode and the coupling electrode extends toward the conducting film formed on the opposite side surface and one end surface of the dielectric block. The above structure allows an increase in the degree of freedom in the design of the characteristics including the resonance frequency and unloaded Q of the dielectric waveguide resonator.

Abstract: A conducting film is formed on a dielectric block in a dielectric waveguide resonator, and a through-hole is formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-hole as well as the outside dimensions of the dielectric block. A terminal electrode is formed on the outer surface of the dielectric block. A coupling hole is formed in the dielectric block and a coupling electrode is formed on the inner surface of the coupling hole. One end of the coupling electrode is connected to the terminal electrode and the other end of the coupling electrode is either connected to the conducting film formed on the outer surface of the dielectric block or terminated inside the dielectric block. The above structure allows an increase in the degree of freedom in the design of the characteristics including the resonance frequency and unloaded Q of the dielectric waveguide resonator.

Abstract: A conducting film is formed on a dielectric block in a dielectric waveguide resonator, and through-holes are formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-holes as well as the outside dimensions of the dielectric block. Terminal electrodes are formed on the outer surface of the dielectric block. Coupling electrodes are formed on the inner surfaces of the through-holes. One end of each coupling electrode is connected to the corresponding terminal electrode and the other end of the coupling electrode may be connected to the conducting film formed on the outer surface of the dielectric block. Alternatively, the other end of the coupling electrode may be partially removed to adjust the amount of coupling; or may be completely removed so as to isolate the coupling electrode from the conducting film on the outer surface.

Abstract: The invention provides a dielectric filter and a dielectric duplexer each having a high degree of freedom in terms of the direction and position of a lead electrode and having a high mutual bonding strength among resonators against bending stress. At both ends of an insulating substrate, lead electrodes are formed. TE-mode dielectric resonators are connected in series with electrically conductive adhesive such as solder and are secured to the substrate again with electrically conductive adhesive. A respective input and output electrode of each of the resonators is connected to a corresponding lead electrode on the substrate with electrically conductive adhesive. The lead electrodes can be routed in any way on the surface of the substrate, and thereby the lead directions and the lead positions can freely be changed.

Abstract: A conducting film is formed on a dielectric block in a dielectric waveguide resonator, and a through-hole is formed in the dielectric block. The unloaded Q is set by selecting the outside dimensions of the dielectric block. The resonance frequency is set by selecting the size and location of the through-hole as well as the outside dimensions of the dielectric block. A terminal electrode is formed on the outer surface of the dielectric block. A coupling hole is formed in the dielectric block and a coupling electrode is formed on the inner surface of the coupling hole. One end of the coupling electrode is connected to the terminal electrode and the other end of the coupling electrode is connected to the conducting film formed on the outer surface of the dielectric block. The above structure increases the degree of freedom in the design of the characteristics, including the resonance frequency and unloaded Q, of the dielectric waveguide resonator.

Abstract: A dielectric filter includes a pair of transverse electric (TE).sub.10 -mode resonators connected in series. Each resonator has a conductor formed on substantially the entire surface of a dielectric body. On the connection surfaces of the resonators are formed grooves, respectively. On the inner surfaces of the grooves, central gaps are formed in the conductors. The pair of resonators are connected at their connection surfaces to combine the grooves to form a coupling-adjustment hole having an axis parallel to the interface between the resonators. The gaps combine to form a coupling window. The groove form a coupling-adjustment hole, through which the coupling window is accessible for being adjusted. The coupling window electromagnetically couples the pair of resonators.

Abstract: A dielectric filter is formed of resonators connected in series with dielectric coupling windows disposed therebetween. When the dielectric constant of the dielectrics which form the dielectric coupling windows is made different from that of the dielectrics which form the resonators, dielectric filter having the same central frequency and a different pass-band width is obtained without changing the shape and dimensions of the dielectric coupling windows.

Abstract: This dielectric resonator comprises a cylindrical hollow case made of metal, a cylindrical hollow dielectric resonator element which is fixed and held in the case, and a dielectric tuning unit which is inserted into or withdrawn from a hollow portion of the dielectric resonator element. The hollow portion of the dielectric resonator element is formed by at least one, or a plurality of, cutout portions which extend along respective radii of the cylindrical dielectric resonator. In this dielectric resonator, the overall effective dielectric constant as a whole can be varied by inserting the tuning unit into or withdrawing it from the hollow portion of the dielectric resonator element. When the tuning unit is withdrawn from the hollow portion of the dielectric resonator element, part of an electric field path at the dielectric resonator element is interrupted by the cutout portions.