Abstract: An n-channel MOS dynamic memory cell includes a semiconductor substrate having a p.sup.+ internal region and a p.sup.- surface region disposed on the surface of the internal region except for an n.sup.+ region serving as a bit line, a capacitor electrode disposed above the surface region, and a transfer gate disposed between the capacitor electrode and the n.sup.+ region above the surface region. The surface region except for the n.sup.+ region and a portion of the internal region disposed below the transfer gate are higher in resistivity than at least one of a portion of the internal region disposed below the capacitor electrode and another portion of the internal region disposed below the n.sup.+ region.

Abstract: A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.

Abstract: A plasma reaction device having a cylindrical reaction chamber connectable to a gas source for receiving internally thereof a working gas for treating workpieces, such as semiconductor wafers, therein with the working gas. An exterior electrode is mounted exteriorly of and about the working chamber and an interior electrode is disposed in the reaction chamber spaced inwardly from the inner surfaces thereof. A high frequency voltage source is connected across the two electrodes for applying a high frequency voltage to the electrodes to excite the working gas and develop a plasma in a space between the electrodes. The interior electrode has a plurality of plasma-diffusion through-holes arranged and dimensioned to effectively obtain a substantially uniform concentration of the plasma on a surface of the workpiece exposed to the interior of the reaction chamber and therefore exposed to the working gap plasma.