Patents by Inventor Shigekazu Hirose

Shigekazu Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching method and recording medium
    Patent number: 8383519
    Abstract: An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.
    Type: Grant
    Filed: February 5, 2008
    Date of Patent: February 26, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Toshihisa Nozawa, Kotaro Miyatani, Toshiyasu Hori, Shigekazu Hirose
  • ETCHING METHOD AND RECORDING MEDIUM
    Publication number: 20100279510
    Abstract: An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.
    Type: Application
    Filed: February 5, 2008
    Publication date: November 4, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toshihisa Nozawa, Kotaro Miyatani, Toshiyasu Hori, Shigekazu Hirose
  • Deposition Method, Deposition Apparatus, Computer Readable Medium, and Semiconductor Device
    Publication number: 20090085172
    Abstract: A deposition method includes steps of placing a substrate on a susceptor in a process chamber; supplying to the process chamber a source gas including an organic compound and a plasma gas for facilitating activation of the source gas into plasma; evacuating the process chamber to a reduced pressure; generating plasma of the plasma gas and the source gas in the process chamber to deposit a barrier film including carbon on the substrate; and applying high frequency bias electric power to the susceptor during the plasma generating step.
    Type: Application
    Filed: September 26, 2008
    Publication date: April 2, 2009
    Inventors: Masahiro Horigome, Shigekazu Hirose