Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of: &thgr;=cos−1(1−t/R)≧15° where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is &thgr;, the probe have a flat portion at an end of the tip portion.

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 8t≦r≦23t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface.

Abstract: A probe card 8 for testing a semiconductor integrated circuit is provided with a plurality of probes for inputting/outputting an electric signal for verifying the operation of a semiconductor integrated circuit 6 to/from bonding pads 7 of the semiconductor integrated circuit. The probes 9 are formed by depositing a conductive film 11 on a surface of a plurality of convex portions formed on a surface of an insulating substrate 10.

Abstract: Multiple probe needles are arranged to be brought into contact with one electrode pad with a probe card, the multiple probe needles are connected in parallel with the same potential, and configured so that the amount of current flowing through the probe needles is at least halved, thereby decreasing generation of heat from Joule heat, and preventing melting of aluminum of which the electrode pads are composed. Consequently, a probe card can be provided wherein adhesion of molten material to the probe needles is suppressed, and wherein increased contact resistance due to oxidization of the material which has melted and adhered is prevented.

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:

Abstract: The present invention provides a member for removing foreign matters adhering to the spherical tip portion of a test probe which is put into contact with the bonding pads of a semiconductor chip to test the action of the semiconductor chip. The member includes four essential layers of a base plate, the first elastic member formed on the base plates and having a material property of flexible deformation by the contact of the probe, specifically, a predetermined Young's modulus, the second elastic member formed on the first elastic member and having a tensile strength and a film thickness capable of responding to a contact stress produced by the contact of the probe, and an abrasive layer formed on the second elastic member and made of hard particles and a binding material which are mixed at a predetermined volume ratio to realize a smooth sliding action of the probe and producing a high abrasive efficiency of the foreign adhering matters.

Abstract: A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:

Abstract: On each of the contact terminals of a test socket, one or more contact projections having a radius of curvature within a specified range, such as 0.03 to 0.3 mm, are formed in the portion of the contact terminals which contacts the corresponding external connection terminal of an electronic device. Further, a plurality of protuberances and recesses are formed on the surface of the contact projection, and each of the protuberances is formed to assume a substantially spherical surface having a radius of curvature of 2 to 15 microns. The test socket is for use in testing an electrical characteristics of an electronic device or a semiconductor package, and stable electrical contact is ensured between contact terminals of the test socket and external connection terminals of an electronic device or a semiconductor package.

Abstract: A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface.

Abstract: A probe card 8 for testing a semiconductor integrated circuit is provided with a plurality of probes for inputting/outputting an electric signal for verifying the operation of a semiconductor integrated circuit 6 to/from bonding pads 7 of the semiconductor integrated circuit. The probes 9 are formed by depositing a conductive film 11 on a surface of a plurality of convex portions formed on a surface of an insulating substrate 10.

Abstract: A primary product comprising tungsten or molybdenum accommodated in a container 1 is heated at 500.degree. C. with 1000 atmospheric pressure in an Ar gas atmosphere and retained for 1 hour. According to the present invention, the crystal orientation in the (110) face can be 99% or more, and thus a material with a good electron radiation characteristic can be obtained.

Abstract: A laser casting apparatus includes a laser light source, a phase disturbing device for disturbing a phase of laser light output from the laser light source, and a beam forming device for forming a beam of a predetermined shape. The formed beam is cast on a work after decomposing the laser light in to beams each having a small area and then superposing the decomposed beams. The phase disturbing device disturbs the phase of the light in a manner so that the superimposed beam formed of the decomposed beams has a uniform energy distribution without interference fringes.

Abstract: A process and an apparatus for manufacturing a cast product in which the cavity 2c is defined by a top die 1, a bottom die 2 and a slidable die insert 11 relative to the top die 1 and a pressure is applied to the die insert 11 by a hydraulic cylinder 13 before casting, injecting a molten metal 6 at a pressure higher than that on the die insert 11 to cause the die insert 11 to move rearward, whereby the molten metal 6 is additionally filled in the cavity 2c by an amount corresponding to the shrinkage due to pressurization, and a pressure on the molten metal 6 within the cavity 2c is maintained through the die insert 11 even after the molten metal 6 in the gate 2b has been solidified and the injection pressure has: not been transmitted anymore.

Abstract: A manufacturing method for a defect-free cast product comprises the steps of forming a cavity surrounded by a plurality of dies, charging molten conductive material into the cavity, and applying pressure to the conductive material by pressure means. In the method, additional pressure is selectively applied to the portion of the conductive material which may suffer shrinkage cavities due to delay in solidification, by utilizing the pressure applied by the pressure means and by relatively moving a portion of the dies with respect to the conductive material when the conductive material solidifies and shrinks, whereby shrinkage cavities are prevented. Accordingly, with a cast rotor core obtained by this method, it is possible to prevent shrinkage cavities from occurring in the conductive material and it is also possible to improve the efficiency and torque characteristics of the motor, thereby achieving reductions in the size and weight of the motor.