Abstract: A semiconductor device is preferably excellent in characteristics such as a loss characteristic. Provided is a semiconductor device including a semiconductor substrate, including an upper-surface electrode provided on an upper surface of the semiconductor substrate; an lower-surface electrode provided on a lower surface of the semiconductor substrate; a transistor portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; a first diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; and a second diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode, wherein the first diode portion and the second diode portion have different resistivities in a depth direction of the semiconductor substrate.

Abstract: A manufacturing method of a Ga2-xFexO3 crystal is provided which can form a superior, uniform, and large crystal. By a floating zone melting method in which ends of material bars (3, 5), which are disposed at an upper and a lower position and which are composed of Ga2-xFexO3, are heated in a gas atmosphere with halogen lamps (6, 7) disposed at confocal areas so as to form a floating melting zone between the ends of the material bars (3, 5) which are disposed at the upper and the lower position and which are composed of Ga2-xFexO3, Ga2-xFexO3 a single crystal having an orthorhombic crystal structure is formed.

Abstract: A manufacturing method of a Ga2-xFexO3 crystal is provided which can form a superior, uniform, and large crystal.