Patents by Inventor Shigeki Sato

Shigeki Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250112232
    Abstract: A cathode active material in the present disclosure has a monoclinic crystal structure that belongs to a space group C2/m, and has a composition shown as a composition formula: AxMn1-yBiyO2·zH2O (A: one or both of Na and K, 0<x<1, 0<y<1, 0<z<2).
    Type: Application
    Filed: September 27, 2024
    Publication date: April 3, 2025
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hiroshi SUYAMA, Shigeki SATO, Hajime ARAI, Atsunori IKEZAWA
  • Publication number: 20250098192
    Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.
    Type: Application
    Filed: November 28, 2024
    Publication date: March 20, 2025
    Inventors: Shigeki SATO, Ryu ARAKI, Hiroshi MIYATA, Soichi YOSHIDA
  • Publication number: 20240429119
    Abstract: Provided is a semiconductor apparatus, comprising: a first electrode arranged above the semiconductor substrate; a protective film having a portion provided above the first electrode; a solder portion arranged sandwiching the protective film in a first direction parallel to an upper surface of the first electrode, a leadframe fixed by the solder portion and arranged above the protective film; and a second electrode, wherein when a width of the protective film is denoted as W1, a length of the protective film is denoted as L1, an arithmetic average roughness of a surface of the protective film is denoted as Ra, a scatter index is denoted as I, and a distance between the protective film and the second electrode is denoted as Dmin, following equations are satisfied: I=((Ra/4)×L1)/(2×(W1×W1/?)0.5), Dmin>2.583×I?16599.
    Type: Application
    Filed: April 21, 2024
    Publication date: December 26, 2024
    Inventor: Shigeki SATO
  • Patent number: 12159928
    Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.
    Type: Grant
    Filed: August 24, 2021
    Date of Patent: December 3, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Shigeki Sato, Ryu Araki, Hiroshi Miyata, Soichi Yoshida
  • Publication number: 20240322152
    Abstract: The aqueous secondary battery of the present disclosure comprises: a positive electrode active material layer, an aqueous electrolyte, and a negative electrode active material layer, wherein the aqueous electrolyte contains an aqueous solvent and potassium polyphosphate which has two or more elemental phosphorus, and any one of potassium ion, proton, hydroxide ion, and polyphosphoric anion is a carrier ion, a positive electrode active material contained in the positive electrode active material layer has a monoclinic crystal structure represented by space group C2/m, is represented by composition formula MnO2·AxBy(H2O)z, and the A, B, and H2O are present in a space interposed between layers composed of Mn—O octahedrons, A is an alkali metal or alkali rare earth metal, B is an anion, 0<x<1, 0<y<1, and 0<z<2.
    Type: Application
    Filed: March 12, 2024
    Publication date: September 26, 2024
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hiroshi SUYAMA, Shigeki SATO, Bunta TANAKA
  • Publication number: 20240322145
    Abstract: A nickel-metal hydride battery of the present disclosure comprises: a positive electrode active material layer, a negative electrode active material layer, and an aqueous electrolyte, wherein a negative electrode active material contained in the negative electrode active material layer is a hydrogen storage alloy having an AB2 main phase, the A site includes Ti, Zr, or a combination thereof, and the B site includes Mn, Cr, Ni, Fe, or a combination thereof.
    Type: Application
    Filed: February 29, 2024
    Publication date: September 26, 2024
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Makio KON, Naotaka SAWADA, Hiroyuki KAIYA, Masanobu OUCHI, Tomoya MATSUNAGA, Hiroshi SUYAMA, Shigeki SATO
  • Patent number: 12094960
    Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.
    Type: Grant
    Filed: August 24, 2021
    Date of Patent: September 17, 2024
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Shigeki Sato, Toshiyuki Matsui, Ryu Araki, Hiroshi Miyata, Soichi Yoshida
  • Publication number: 20240223180
    Abstract: A semiconductor device includes an output element configured to switch on and off according to a drive signal to drive a load, a current monitoring element configured to monitor a current flowing through the output element, and a capacitor having one end connected to a gate of the output element and another end connected to a gate of the current monitoring element. The semiconductor device further includes a current detection resistor configured to output a sense current detection signal obtained by converting a sense current output from the current monitoring element into a voltage, and an overcurrent detection circuit configured to detect an overcurrent state of the output element, by comparing the sense current detection signal with a reference voltage.
    Type: Application
    Filed: March 14, 2024
    Publication date: July 4, 2024
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Shigeki SATO
  • Publication number: 20240223181
    Abstract: A semiconductor device includes an output element configured to switch on and off based on a drive signal, so as to drive a load, a current monitoring element configured to monitor a current that flows through the output element, and a voltage control circuit that includes a first diode configured to charge a gate voltage applied to a gate of the current monitoring element and a second diode configured to discharge the gate voltage, so that the voltage control circuit controls the gate voltage. An anode of the first diode is connected to a gate of the output element and a cathode of the second diode, and a cathode of the first diode is connected to an anode of the second diode and the gate of the current monitoring element.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Shigeki SATO
  • Publication number: 20240219449
    Abstract: A semiconductor device, including: an output element having a gate, the output element being configured to perform switching to thereby operate a load of the semiconductor device in accordance with a drive signal applied to the gate thereof; a current monitoring element having a gate and a sense emitter, the current monitoring element being configured to monitor a current flowing through the output element; and a voltage division circuit, which is connected between the gate of the output element and the sense emitter of the current monitoring element, which divides a voltage of the drive signal applied to the gate of the output element, and which applies an obtained voltage to the gate of the current monitoring element.
    Type: Application
    Filed: March 12, 2024
    Publication date: July 4, 2024
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Shigeki SATO
  • Publication number: 20240213546
    Abstract: Disclosed are a novel inorganic compound capable of functioning as a negative electrode active material of an aqueous battery, and an aqueous battery using the same. The aqueous battery of the present disclosure comprises a positive electrode, an aqueous electrolyte solution and a negative electrode, the aqueous electrolyte solution contains water and alkali metal ions or zinc ions, the negative electrode contains an inorganic compound as a negative electrode active material, and the inorganic compound has a crystal structure belonging to a space group I23.
    Type: Application
    Filed: December 13, 2023
    Publication date: June 27, 2024
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Hiroshi SUYAMA, Hidenori MIKI, Shigeki SATO
  • Publication number: 20240145465
    Abstract: A semiconductor device is preferably excellent in characteristics such as a loss characteristic. Provided is a semiconductor device including a semiconductor substrate, including an upper-surface electrode provided on an upper surface of the semiconductor substrate; an lower-surface electrode provided on a lower surface of the semiconductor substrate; a transistor portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; a first diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; and a second diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode, wherein the first diode portion and the second diode portion have different resistivities in a depth direction of the semiconductor substrate.
    Type: Application
    Filed: December 14, 2023
    Publication date: May 2, 2024
    Inventors: Shigeki SATO, Seiji MOMOTA, Tadashi MIYASAKA
  • Publication number: 20240072251
    Abstract: The disclosure provides a novel positive electrode active material for an aqueous potassium ion battery, and a novel potassium ion secondary battery. The positive electrode active material for an aqueous potassium ion battery is represented by the general formula LixMn2O4, where 0<x<2. The aqueous potassium ion secondary battery comprises a positive electrode active material represented by the general formula LixMn2O4 where 0<x<2, and an aqueous electrolyte solution, wherein the aqueous electrolyte solution has a pH of 7.0 to 13.0 and comprises an aqueous solvent and a potassium salt dissolved in the aqueous solvent. The potassium salt is preferably potassium pyrophosphate.
    Type: Application
    Filed: June 29, 2023
    Publication date: February 29, 2024
    Inventors: Shigeki Sato, Shogo Kihara, Hiroshi Suyama
  • Publication number: 20240055590
    Abstract: The disclosure provides a novel positive electrode active material for an aqueous potassium ion battery, and a novel potassium ion secondary battery. The positive electrode active material for an aqueous potassium ion battery is represented by the general formula LiNixMnyCo1-x-yO2, where 0?x<1, 0?y<1 and x+y<1. The aqueous potassium ion secondary battery of the disclosure comprises a positive electrode active material which is represented by general formula LiNixMnyCo1-x-yO2, where 0?x<1, 0?y<1 and x+y<1. The aqueous potassium ion secondary battery of the disclosure comprises an aqueous electrolyte solution, wherein the pH of the aqueous electrolyte solution is 4.0 to 13.0, and the aqueous electrolyte solution contains an aqueous solvent and potassium pyrophosphate dissolved in the aqueous solvent.
    Type: Application
    Filed: June 15, 2023
    Publication date: February 15, 2024
    Inventors: Shigeki Sato, Hiroshi Suyama
  • Patent number: 11855077
    Abstract: A semiconductor device is preferably excellent in characteristics such as a loss characteristic. Provided is a semiconductor device including a semiconductor substrate, including an upper-surface electrode provided on an upper surface of the semiconductor substrate; an lower-surface electrode provided on a lower surface of the semiconductor substrate; a transistor portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; a first diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; and a second diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode, wherein the first diode portion and the second diode portion have different resistivities in a depth direction of the semiconductor substrate.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: December 26, 2023
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Shigeki Sato, Seiji Momota, Tadashi Miyasaka
  • Publication number: 20230352748
    Abstract: The present disclosure provides a novel negative electrode active material for a potassium ion secondary battery and a novel configuration of a potassium ion secondary battery. The negative electrode active material for an aqueous potassium ion battery of the present disclosure comprising tungsten oxide and/or consisting of tungsten oxide. The aqueous potassium ion battery of the present disclosure comprises tungsten oxide as a negative electrode active material. The aqueous potassium ion battery of the present disclosure may comprise an aqueous electrolytic solution, a pH of the aqueous electrolytic solution is 4.0 to 12.0, and the aqueous electrolytic solution may comprise a solvent comprising water and potassium pyrophosphate dissolved in the solvent.
    Type: Application
    Filed: April 21, 2023
    Publication date: November 2, 2023
    Inventors: Hiroshi Suyama, Shigeki Sato
  • Patent number: 11557427
    Abstract: A coil component in which a change in thicknesses of the winding part is prevented is provided. According to the coil component, since each of a pair of neighboring resin walls and a seed part between the pair of resin walls are separated by a predetermined distance, a plating part grown on the seed part is easy to grow uniformly between the pair of neighboring resin walls. For this reason, the winding part whose surface is gentle and in which a change in thickness is prevented is obtained by plating growth.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: January 17, 2023
    Assignee: TDK CORPORATION
    Inventors: Hitoshi Ohkubo, Masazumi Arata, Manabu Ohta, Yuuya Kaname, Yoshihiro Maeda, Takahiro Kawahara, Hokuto Eda, Shigeki Sato
  • Publication number: 20220328668
    Abstract: Provided is a semiconductor device including: a first trench portion having a predetermined first trench length; a second trench portion having a second trench length longer than the first trench length; a first gate runner portion configured to be electrically connected to an end portion of the first trench portion; and a second gate runner portion configured to be electrically connected to the first gate runner portion and electrically connected to an end portion of the second trench portion. A resistivity per unit length of the first gate runner portion is larger than a resistivity per unit length of the second gate runner portion.
    Type: Application
    Filed: February 24, 2022
    Publication date: October 13, 2022
    Inventors: Shigeki SATO, Soichi YOSHIDA, Kouji ASAHI, Seiji MOMOTA
  • Patent number: 11433761
    Abstract: A grille shutter device opens and closes an introduction passage through which air is introduced from an opening provided at a front part of a vehicle to the inside of the vehicle. The grille shutter device includes: a driving fin and a driven fin that are configured to rotate between an open position in which the introduction passage is open and a closed position in which the introduction passage is closed; an actuator configured to drive the driving fin; a power transmission member configured to transmit power from the driving fin to the driven fin; and a first stopper configured to define a first position by coming into contact with the power transmission member.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: September 6, 2022
    Assignees: AISIN CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Ken Komatsubara, Kazuki Tsuboi, Shigeki Sato, Toshikazu Harada, Shuichi Morie
  • Publication number: 20210384333
    Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.
    Type: Application
    Filed: August 24, 2021
    Publication date: December 9, 2021
    Inventors: Shigeki SATO, Toshiyuki MATSUI, Ryu ARAKI, Hiroshi MIYATA, Soichi YOSHIDA