Abstract: A cathode active material in the present disclosure has a monoclinic crystal structure that belongs to a space group C2/m, and has a composition shown as a composition formula: AxMn1-yBiyO2·zH2O (A: one or both of Na and K, 0<x<1, 0<y<1, 0<z<2).

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.

Abstract: Provided is a semiconductor apparatus, comprising: a first electrode arranged above the semiconductor substrate; a protective film having a portion provided above the first electrode; a solder portion arranged sandwiching the protective film in a first direction parallel to an upper surface of the first electrode, a leadframe fixed by the solder portion and arranged above the protective film; and a second electrode, wherein when a width of the protective film is denoted as W1, a length of the protective film is denoted as L1, an arithmetic average roughness of a surface of the protective film is denoted as Ra, a scatter index is denoted as I, and a distance between the protective film and the second electrode is denoted as Dmin, following equations are satisfied: I=((Ra/4)×L1)/(2×(W1×W1/?)0.5), Dmin>2.583×I?16599.

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.

Abstract: The aqueous secondary battery of the present disclosure comprises: a positive electrode active material layer, an aqueous electrolyte, and a negative electrode active material layer, wherein the aqueous electrolyte contains an aqueous solvent and potassium polyphosphate which has two or more elemental phosphorus, and any one of potassium ion, proton, hydroxide ion, and polyphosphoric anion is a carrier ion, a positive electrode active material contained in the positive electrode active material layer has a monoclinic crystal structure represented by space group C2/m, is represented by composition formula MnO2·AxBy(H2O)z, and the A, B, and H2O are present in a space interposed between layers composed of Mn—O octahedrons, A is an alkali metal or alkali rare earth metal, B is an anion, 0<x<1, 0<y<1, and 0<z<2.

Abstract: A nickel-metal hydride battery of the present disclosure comprises: a positive electrode active material layer, a negative electrode active material layer, and an aqueous electrolyte, wherein a negative electrode active material contained in the negative electrode active material layer is a hydrogen storage alloy having an AB2 main phase, the A site includes Ti, Zr, or a combination thereof, and the B site includes Mn, Cr, Ni, Fe, or a combination thereof.

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.

Abstract: A semiconductor device includes an output element configured to switch on and off according to a drive signal to drive a load, a current monitoring element configured to monitor a current flowing through the output element, and a capacitor having one end connected to a gate of the output element and another end connected to a gate of the current monitoring element. The semiconductor device further includes a current detection resistor configured to output a sense current detection signal obtained by converting a sense current output from the current monitoring element into a voltage, and an overcurrent detection circuit configured to detect an overcurrent state of the output element, by comparing the sense current detection signal with a reference voltage.

Abstract: A semiconductor device includes an output element configured to switch on and off based on a drive signal, so as to drive a load, a current monitoring element configured to monitor a current that flows through the output element, and a voltage control circuit that includes a first diode configured to charge a gate voltage applied to a gate of the current monitoring element and a second diode configured to discharge the gate voltage, so that the voltage control circuit controls the gate voltage. An anode of the first diode is connected to a gate of the output element and a cathode of the second diode, and a cathode of the first diode is connected to an anode of the second diode and the gate of the current monitoring element.

Abstract: A semiconductor device, including: an output element having a gate, the output element being configured to perform switching to thereby operate a load of the semiconductor device in accordance with a drive signal applied to the gate thereof; a current monitoring element having a gate and a sense emitter, the current monitoring element being configured to monitor a current flowing through the output element; and a voltage division circuit, which is connected between the gate of the output element and the sense emitter of the current monitoring element, which divides a voltage of the drive signal applied to the gate of the output element, and which applies an obtained voltage to the gate of the current monitoring element.

Abstract: Disclosed are a novel inorganic compound capable of functioning as a negative electrode active material of an aqueous battery, and an aqueous battery using the same. The aqueous battery of the present disclosure comprises a positive electrode, an aqueous electrolyte solution and a negative electrode, the aqueous electrolyte solution contains water and alkali metal ions or zinc ions, the negative electrode contains an inorganic compound as a negative electrode active material, and the inorganic compound has a crystal structure belonging to a space group I23.

Abstract: A semiconductor device is preferably excellent in characteristics such as a loss characteristic. Provided is a semiconductor device including a semiconductor substrate, including an upper-surface electrode provided on an upper surface of the semiconductor substrate; an lower-surface electrode provided on a lower surface of the semiconductor substrate; a transistor portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; a first diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; and a second diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode, wherein the first diode portion and the second diode portion have different resistivities in a depth direction of the semiconductor substrate.

Abstract: The disclosure provides a novel positive electrode active material for an aqueous potassium ion battery, and a novel potassium ion secondary battery. The positive electrode active material for an aqueous potassium ion battery is represented by the general formula LixMn2O4, where 0<x<2. The aqueous potassium ion secondary battery comprises a positive electrode active material represented by the general formula LixMn2O4 where 0<x<2, and an aqueous electrolyte solution, wherein the aqueous electrolyte solution has a pH of 7.0 to 13.0 and comprises an aqueous solvent and a potassium salt dissolved in the aqueous solvent. The potassium salt is preferably potassium pyrophosphate.

Abstract: The disclosure provides a novel positive electrode active material for an aqueous potassium ion battery, and a novel potassium ion secondary battery. The positive electrode active material for an aqueous potassium ion battery is represented by the general formula LiNixMnyCo1-x-yO2, where 0?x<1, 0?y<1 and x+y<1. The aqueous potassium ion secondary battery of the disclosure comprises a positive electrode active material which is represented by general formula LiNixMnyCo1-x-yO2, where 0?x<1, 0?y<1 and x+y<1. The aqueous potassium ion secondary battery of the disclosure comprises an aqueous electrolyte solution, wherein the pH of the aqueous electrolyte solution is 4.0 to 13.0, and the aqueous electrolyte solution contains an aqueous solvent and potassium pyrophosphate dissolved in the aqueous solvent.

Abstract: A semiconductor device is preferably excellent in characteristics such as a loss characteristic. Provided is a semiconductor device including a semiconductor substrate, including an upper-surface electrode provided on an upper surface of the semiconductor substrate; an lower-surface electrode provided on a lower surface of the semiconductor substrate; a transistor portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; a first diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; and a second diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode, wherein the first diode portion and the second diode portion have different resistivities in a depth direction of the semiconductor substrate.

Abstract: The present disclosure provides a novel negative electrode active material for a potassium ion secondary battery and a novel configuration of a potassium ion secondary battery. The negative electrode active material for an aqueous potassium ion battery of the present disclosure comprising tungsten oxide and/or consisting of tungsten oxide. The aqueous potassium ion battery of the present disclosure comprises tungsten oxide as a negative electrode active material. The aqueous potassium ion battery of the present disclosure may comprise an aqueous electrolytic solution, a pH of the aqueous electrolytic solution is 4.0 to 12.0, and the aqueous electrolytic solution may comprise a solvent comprising water and potassium pyrophosphate dissolved in the solvent.

Abstract: A coil component in which a change in thicknesses of the winding part is prevented is provided. According to the coil component, since each of a pair of neighboring resin walls and a seed part between the pair of resin walls are separated by a predetermined distance, a plating part grown on the seed part is easy to grow uniformly between the pair of neighboring resin walls. For this reason, the winding part whose surface is gentle and in which a change in thickness is prevented is obtained by plating growth.

Abstract: Provided is a semiconductor device including: a first trench portion having a predetermined first trench length; a second trench portion having a second trench length longer than the first trench length; a first gate runner portion configured to be electrically connected to an end portion of the first trench portion; and a second gate runner portion configured to be electrically connected to the first gate runner portion and electrically connected to an end portion of the second trench portion. A resistivity per unit length of the first gate runner portion is larger than a resistivity per unit length of the second gate runner portion.

Abstract: A grille shutter device opens and closes an introduction passage through which air is introduced from an opening provided at a front part of a vehicle to the inside of the vehicle. The grille shutter device includes: a driving fin and a driven fin that are configured to rotate between an open position in which the introduction passage is open and a closed position in which the introduction passage is closed; an actuator configured to drive the driving fin; a power transmission member configured to transmit power from the driving fin to the driven fin; and a first stopper configured to define a first position by coming into contact with the power transmission member.

Abstract: A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.