Abstract: A thermo-sensitive draw solute including a polyoxyalkylene adduct represented by a general formula (1): R1O(AO)nR2 (1), where R1 denotes a residue after withdrawal of a hydroxy group from a monovalent alcohol having a carbon number ranging from 6 to 13, R2 denotes a hydrogen atom or denotes an alkyl group or an alkenyl group having a carbon number ranging from 1 to 13, AO denotes an oxyalkylene group having a carbon number ranging from 2 to 4, n denotes an average added mole number of an alkylene oxide ranging from 1 to 235, and where n is two or more, the two or more AOs may be the same or different from each other.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: Provided is a battery pack including: a first battery group in which a plurality of storage batteries having a battery can side surface and a battery can bottom surface linked to the battery can side surface are laminated so that the battery can side surfaces face each other; a second battery group in which a plurality of storage batteries having a battery can side surface and a battery can bottom surface linked to the battery can side surface are laminated so that the battery can side surfaces are face each other; and a case housing the first battery group and the second battery group, wherein the facing surfaces of the first battery group and the second battery group are directly or indirectly thermally connected to each other.

Abstract: A power module which includes a power semiconductor module chip, a driver chip and a charge storage element. The power semiconductor module chip is configured by forming an IGBT having a trench gate structure including a dummy trench gate, and a freewheeling diode for returning excess carrier of the emitter of the IGBT to the collector of the IGBT, in the same chip. The drive chip is used for driving the IGBT on/off. The power module is configured by packaging the power semiconductor module chip and the drive chip. The charge storage element that is connected between the gate and emitter of a dummy IGBT which can be pseudo-formed in order that the dummy trench gate be used in screening examinations.

Abstract: A grille shutter device opens and closes an introduction passage through which air is introduced from an opening provided at a front part of a vehicle to the inside of the vehicle. The grille shutter device includes: a driving fin and a driven fin that are configured to rotate between an open position in which the introduction passage is open and a closed position in which the introduction passage is closed; an actuator configured to drive the driving fin; a power transmission member configured to transmit power from the driving fin to the driven fin; and a first stopper configured to define a first position by coming into contact with the power transmission member.

Abstract: In a coil component and a method for manufacturing the same, a winding part of a coil is grown by plating so as to extend between resin walls of a resin body provided before the coil is grown by plating. The resin wall is interposed between adjacent turns of the winding part of the coil during the plating growth, and therefore contact between adjacent turns of the winding part of the coil cannot occur.

Abstract: A coil device comprising a coil, and a magnetic metal powder containing resin covering said coil. Said magnetic metal powder comprises at least two types of magnetic metal powders with different D50. The magnetic metal powder having larger D50 is defined as a large diameter powder, and the magnetic metal powder having smaller D50 is defined as a small diameter powder among the two types of said magnetic metal powder. Said large diameter powder is made of iron or iron based alloy. Said small diameter powder is made of Ni—Fe alloy. Said small diameter powder has D50 of 0.5 to 1.5 ?m. Said large diameter powder and said small diameter powder respectively comprises an insulation coating layer.

Abstract: In a coil component and a method for manufacturing the same, a winding part of a coil is grown by plating so as to extend between resin walls of a resin body provided before the coil is grown by plating. The resin wall is interposed between adjacent turns of the winding part of the coil during the plating growth, and therefore contact between adjacent turns of the winding part of the coil cannot occur.

Abstract: A power module which includes a power semiconductor chip that includes an IGBT and a freewheeling diode formed in the same chip, and the power module includes a drive circuit that is connected to the power semiconductor chip and drives the IGBT on/off. The power module is configured by packaging the power semiconductor chip and the drive circuit, and is characterized by further including a capacitor and a switch element disposed in series between the emitter of the IGBT and the ground of the drive circuit. The switch element connects the emitter and the ground in the case where the drive circuit has the IGBT perform a turn off switching operation.

Abstract: A coil component in which a change in thicknesses of the winding part is prevented is provided. According to the coil component, since each of a pair of neighboring resin walls and a seed part between the pair of resin walls are separated by a predetermined distance, a plating part grown on the seed part is easy to grow uniformly between the pair of neighboring resin walls. For this reason, the winding part whose surface is gentle and in which a change in thickness is prevented is obtained by plating growth.

Abstract: An objective of the present invention is to provide a positive electrode active material that can inhibit the capacity changes associated with temperature variations, and an alkaline battery that contains this positive electrode active material. Aluminum and ytterbium are at least partially solid-dissolved in nickel hydroxide in the nickel composite hydroxide present in the positive electrode active material of the present invention.

Abstract: A touch sensor of this disclosure includes: a printed circuit board having a connection terminal; a substrate portion having a mounting portion on which the printed circuit board is mounted; a conductive layer disposed on the mounting portion of the substrate portion; and an adhesive agent connecting the connection terminal and the conductive layer to each other. A plurality of linear projections arranged in a first direction and extending in a second direction intersecting with the first direction are disposed on a surface of the substrate portion at the mounting portion, and the conductive layer is disposed on a groove portion positioned between the linear projections disposed adjacently to each other out of the plurality of linear projections.

Abstract: A coil component in which a change in thicknesses of the winding part is prevented is provided. According to the coil component, since each of a pair of neighboring resin walls and a seed part between the pair of resin walls are separated by a predetermined distance, a plating part grown on the seed part is easy to grow uniformly between the pair of neighboring resin walls. For this reason, the winding part whose surface is gentle and in which a change in thickness is prevented is obtained by plating growth.

Abstract: A semiconductor device, including a semiconductor substrate, an active region formed on the semiconductor substrate, and a gate runner disposed to surround the active region. The active region includes a first cell group in which a gate electrode of each cell is directly connected to the gate runner, and a second cell group in which a gate electrode of each cell is connected to the gate runner via a di/dt mitigating element. The di/dt mitigating element is a capacitor, a resistor connected in parallel to a capacitor, or an inverse-parallel-connected diode.

Abstract: In a coil component and a method for manufacturing the same, a winding part of a coil is grown by plating so as to extend between resin walls of a resin body provided before the coil is grown by plating. The resin wall is interposed between adjacent turns of the winding part of the coil during the plating growth, and therefore contact between adjacent turns of the winding part of the coil cannot occur.

Abstract: A power module which includes a power semiconductor chip that includes an IGBT and a freewheeling diode formed in the same chip, and the power module includes a drive circuit that is connected to the power semiconductor chip and drives the IGBT on/off. The power module is configured by packaging the power semiconductor chip and the drive circuit, and is characterized by further including a capacitor and a switch element disposed in series between the emitter of the IGBT and the ground of the drive circuit. The switch element connects the emitter and the ground in the case where the drive circuit has the IGBT perform a turn off switching operation.

Abstract: A touch sensor of this disclosure includes: a printed circuit board having a connection terminal; a substrate portion having a mounting portion on which the printed circuit board is mounted; a conductive layer disposed on the mounting portion of the substrate portion; and an adhesive agent connecting the connection terminal and the conductive layer to each other. A plurality of linear projections arranged in a first direction and extending in a second direction intersecting with the first direction are disposed on a surface of the substrate portion at the mounting portion, and the conductive layer is disposed on a groove portion positioned between the linear projections disposed adjacently to each other out of the plurality of linear projections.

Abstract: A power module which includes a power semiconductor module chip, a driver chip and a charge storage element. The power semiconductor module chip is configured by forming an IGBT having a trench gate structure including a dummy trench gate, and a freewheeling diode for returning excess carrier of the emitter of the IGBT to the collector of the IGBT, in the same chip. The drive chip is used for driving the IGBT on/off. The power module is configured by packaging the power semiconductor module chip and the drive chip. The charge storage element that is connected between the gate and emitter of a dummy IGBT which can be pseudo-formed in order that the dummy trench gate be used in screening examinations.

Abstract: In a coil component 1 and a method for manufacturing the same, a winding part of a coil is grown by plating so as to extend between resin walls of a resin body provided before the coil is grown by plating. The resin wall is interposed between adjacent turns of the winding part of the coil during the plating growth, and therefore contact between adjacent turns of the winding part of the coil cannot occur.

Abstract: A semiconductor device is preferably excellent in characteristics such as a loss characteristic. Provided is a semiconductor device including a semiconductor substrate, including an upper-surface electrode provided on an upper surface of the semiconductor substrate; an lower-surface electrode provided on a lower surface of the semiconductor substrate; a transistor portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; a first diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode; and a second diode portion provided in the semiconductor substrate and connected to the upper-surface electrode and the lower-surface electrode, wherein the first diode portion and the second diode portion have different resistivities in a depth direction of the semiconductor substrate.