Abstract: The purpose of the present invention is to provide a recipe creation device, with the goal of using past recipe data in order to highly efficiently create recipes. As an embodiment with which to achieve this goal, there is provided a recipe creation device comprising an arithmetic processing device that, on the basis of design data for a semiconductor element, establishes measurement conditions or inspection conditions by a semiconductor measurement device or a semiconductor inspection device, wherein the arithmetic processing device is configured to be able to access a database in which the measurement conditions or inspection conditions, and the pattern information of the semiconductor element, are stored in associated form, and the measurement conditions or inspection conditions are selected through a search using pattern information of the semiconductor element.

Abstract: The purpose of the present invention is to provide a recipe creation device, with the goal of using past recipe data in order to highly efficiently create recipes. As an embodiment with which to achieve this goal, there is provided a recipe creation device comprising an arithmetic processing device that, on the basis of design data for a semiconductor element, establishes measurement conditions or inspection conditions by a semiconductor measurement device or a semiconductor inspection device, wherein the arithmetic processing device is configured to be able to access a database in which the measurement conditions or inspection conditions, and the pattern information of the semiconductor element, are stored in associated form, and the measurement conditions or inspection conditions are selected through a search using pattern information of the semiconductor element.

Abstract: A template creation device for a sample observation device for creating a template for image processing using design data includes a storage unit for storing process information in which information concerning a plurality of process processings is defined, and a template creation unit for processing the design data using the process information and creating the template for the image processing.

Abstract: In a method and apparatus for quantitatively evaluating two-dimensional patterns, a reference coordinate system is set in order to convert pattern edge information (one-dimensional data) acquired by measurement using an existing critical dimension machine into coordinate data. Thus, a pattern is converted into coordinate information. Next, a function formula is determined from this coordinate information by approximate calculation and a pattern is represented by the mathematical expression y=f(x). Integrating y=f(x) in the reference coordinate used when calculating the coordinate data gives the area of the pattern, whereby it is possible to convert the coordinate data to two-dimensional data.

Abstract: There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern. For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.

Abstract: There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern. For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.

Abstract: There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern. For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.

Abstract: A method capable of quantitatively evaluating two-dimensional patterns and a system to which the method is applied are provided. In the present invention, a reference coordinate system is set in order to convert pattern edge information (one-dimensional data) acquired by measurement using an existing critical dimension machine into coordinate data. Thus, a pattern is converted into coordinate information. Next, a function formula is determined from this coordinate information by approximate calculation and a pattern is represented by the mathematical expression y=f(x). Integrating y=f(x) in the reference coordinate used when calculating the coordinate data gives the area of the pattern, whereby it is possible to convert the coordinate data to two-dimensional data.

Abstract: There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern. For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.