Abstract: A sputtering target material comprises an oxide including elemental indium (In), elemental zinc (Zn), and an additive element (X). The additive element (X) is one or more elements selected from tantalum (Ta), strontium (Sr), and niobium (Nb). In the sputtering target material, the atomic ratios between the elements satisfy the formulae (1) to (3) below. The sputtering target material has a relative density of 95% or more. 0.4 ? In+X / In+Zn+X ? 0.8 ­­­(1) 0.2 ? Zn / In+Zn+X ? 0.

Abstract: A polishing material including polishing abrasive grains, the polishing abrasive grain having a core material that includes a metal oxide, and a cover layer that is provided on a surface of the core material and includes an oxide of a metal, that is different from the core material, or an oxide of a semimetal. When the polishing abrasive grains are observed with a scanning electron microscope after boiling a slurry including the polishing abrasive grains for 5 hours, a ratio of a longitudinal axis to a lateral axis of the polishing abrasive grain is 1.0 or greater and less than 1.5. The polishing abrasive grain preferably has a mass ratio of the cover layer to the core material, cover layer/core material, of from 0.3 mass % to 30 mass % inclusive. The cover layer preferably has a thickness of from 0.2 nm to 500 nm inclusive.

Abstract: A polishing material including polishing abrasive grains, the polishing abrasive grain having a core material that includes a metal oxide, and a cover layer that is provided on a surface of the core material and includes an oxide of a metal, that is different from the core material, or an oxide of a semimetal. When the polishing abrasive grains are observed with a scanning electron microscope after boiling a slurry including the polishing abrasive grains for 5 hours, a ratio of a longitudinal axis to a lateral axis of the polishing abrasive grain is 1.0 or greater and less than 1.5. The polishing abrasive grain preferably has a mass ratio of the cover layer to the core material, cover layer/core material, of from 0.3 mass % to 30 mass % inclusive. The cover layer preferably has a thickness of from 0.2 nm to 500 nm inclusive.

Abstract: To provide an Al—Ni alloy wiring electrode material, which has flexibility suitable for organic EL, can be directly bonded to a transparent electrode layer of ITO or the like, and is excellent in corrosion resistance against developers. An Al—Ni alloy wiring electrode material containing aluminum, nickel and boron, wherein the material contains a total of 0.35 at % to 1.2 at % of nickel and boron with the balance being aluminum. It is also preferred that the Al—Ni alloy wiring electrode material contain 0.3 at % to 0.7 at % of nickel and 0.05 at % to 0.5 at % of boron.

Abstract: An Aluminum-Nickel alloy wiring material includes Aluminum, Nickel, Cerium, and Boron. A thin film transistor includes the Aluminum-Nickel alloy wiring material. A sputtering target comprises Aluminum, Nickel, Cerium and Boron. A method of manufacturing a thin film transistor substrate comprises disposing a thin film transistor on a substrate, wherein the thin film transistor includes a wiring circuit layer comprising Aluminum, Nickel, Cerium, and Boron. The Nickel, Cerium and Boron satisfy the following inequalities; 0.5?X?5.0, 0.01?Y?1.0, and 0.01?Z?1.0, respectively, wherein X represents an atomic percentage of Nickel content, Y represents an atomic percentage of Cerium content, and Z represents an atomic percentage of Boron content.