Abstract: Provided is a high-Mn steel having excellent low-temperature toughness and excellent surface characteristics. A high-Mn steel comprises: a chemical composition containing, in mass %, C: 0.100 to 0.700%, Si: 0.05 to 1.00%, Mn: 20.0 to 35.0%, P: ?0.030%, S: ?0.0070%, Al: 0.010 to 0.070%, Cr: 0.50 to 5.00%, N: 0.0050 to 0.0500%, O: ?0.0050%, Ti: ?0.005%, and Nb: ?0.005%, with a balance consisting of Fe and inevitable impurities; and a microstructure having austenite as a matrix, wherein in the microstructure, a Mn concentration of a Mn-concentrated portion is 38.0% or less, and an average KAM value is 0.3 or more, yield stress is 400 MPa or more, absorbed energy vE?196 in a Charpy impact test at ?196° C. is 100 J or more, and percent brittle fracture is less than 10%.

Abstract: The voltage transmission circuit includes: a multiplexer for transmitting positive and negative voltages ranging +VDD to ?VDD selectively; and a demultiplexer for receiving the positive and negative voltages and output them at positive and negative outputs. The voltage transmission circuit is arranged by use of elements each having a withstand voltage of which the absolute value is not 2|VDD|, but |VDD|. While transmitting positive voltages, the multiplexer is configured not to be applied by negative voltages, the multiplexer and demultiplexer are controlled by signals each having a potential of 0 V to +VDD, and the demultiplexer outputs the positive voltages at the positive output. While transmitting negative voltages, the multiplexer is configured not to be applied by positive voltages, the multiplexer and the demultiplexer are controlled by signals each having a potential of ?VDD to 0 V, and the demultiplexer outputs the negative voltages at the negative output.

Abstract: The voltage transmission circuit includes: a multiplexer for transmitting positive and negative voltages ranging +VDD to ?VDD selectively; and a demultiplexer for receiving the positive and negative voltages and output them at positive and negative outputs. The voltage transmission circuit is arranged by use of elements each having a withstand voltage of which the absolute value is not 2|VDD|, but |VDD|. While transmitting positive voltages, the multiplexer is configured not to be applied by negative voltages, the multiplexer and demultiplexer are controlled by signals each having a potential of 0 V to +VDD, and the demultiplexer outputs the positive voltages at the positive output. While transmitting negative voltages, the multiplexer is configured not to be applied by positive voltages, the multiplexer and the demultiplexer are controlled by signals each having a potential of ?VDD to 0 V, and the demultiplexer outputs the negative voltages at the negative output.

Abstract: The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.

Abstract: The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.

Abstract: The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.

Abstract: A challenge to be met by the present invention is to provide a vibration detection sensor which can be applied to various instruments or fields requiring accurate detection and measurement of vibration. A vibration detection sensor (100) has a substrate (2), and a cable-shaped piezoelectric element (1) connected directly to at least one end of the substrate. The cable-shaped piezoelectric element (1) has along a radial direction thereof a core electrode (3), a piezoelectric member (5) disposed around the core electrode, an outer electrode (7) disposed around the piezoelectric member, and a sheathing layer (9) disposed around the outer electrode.

Abstract: The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.

Abstract: An object of the invention is to provide a door open/close device capable of unlocking/locking a door simultaneously with an operation of externally and internally opening/closing the door.

Abstract: There is provided an extrusion head that is capable of largely increasing a production speed rather than a conventional head that extrudes supplies a high viscous melt-coating composition.

Abstract: The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.

Abstract: In a position estimation apparatus, an information acquisition/storage section 3 acquires, when a receiver 1 can track an artificial satellite, a current position obtained from the receiver 1 and an output value from each of pressure sensors 2R and 2L, and then stores at least a travel speed and a travel direction for a user and the obtained output value. Also, when the receiver 1 cannot track the artificial satellite, a locator 4 in the position estimation apparatus retrieves, from the information acquisition/storage section 3, a travel speed and a travel direction of the user based on the output value acquired from each of the sensors 2R and 2L and the output value stored in the information acquisition/storage section 3. Thereafter, the locator 4 estimates a current position of the user based on the retrieved travel speed and travel direction.

Abstract: While there are contact joining and capacitance type switches for detecting an operation of a door handle, a problem that is to be solved by the invention is to solve problems of contact failure due to aging and a malfunction triggered by rain drops. According to the invention, a piezoelectric sensor (4) has such flexibility as to be annexed to a door handle (3), whereby a minute displacement of the door handle (3) can be detected with high sensitivity. Consequently, a sufficient signal output can be obtained only through a simple touch to the door handle (3), whereby a touch or contact to the door handle (3) can be detected. In addition, since electrodes are not exposed to the outside, the piezoelectric sensor (4) is made difficult to be affected by disturbance, and dust, rain, snow and the like which come to adhere thereto.

Abstract: In a movable body opening and closing control apparatus of the invention, a problem is to perform safely an abrupt closing operation of a movable body in the middle of opening the same.

Abstract: A pressure sensitive sensor provided in at least one of an opening section and an opening and closing section for opening and closing the opening section and serving to detect pinching of an object between the opening section and the opening and closing section based on an output signal generated by deformation upon receipt of external force, including a pressure sensitive element 33 for generating an output signal corresponding to deformation and a support element 35 for supporting the pressure sensitive element 33 on at least one of the opening section and the opening and closing section, the support element 35 including at least a first deformation section 37 having a first elastic modulus and serving to increase deformation of the pressure sensitive sensor 17, and a second deformation section 39 having a second elastic modulus which is higher than the first elastic modulus.

Abstract: An object of the invention is to provide a bed which can surely detect the positional shift and heartbeat vibration of a bedded person while suppressing the increase of the cost and the degradation of the comfortability of a bed, and to provide a bed and an in-bed state detection method which can prevent the undesirable caught at the time of elevating the bed. In order to detect the shift of a bedded person, a ratio of intensities between output signals from first pressure sensitive sensor 21 and a second pressure sensitive sensor 22 each having a cable shape is obtained. These sensors are disposed along the lying direction at the both end sides of a bedding surface 15a on which a bedded person lies, respectively. When the ratio is in a range of a predetermined shift state set in advance, it is determined that the positional shift of a bedded person on the bedding surface 15a occurs. Further, a low-repulsion urethane layer is provided within a bed pad thereby to detect the heartbeat vibration.

Abstract: A problem of the invention is to provide a vibration detecting apparatus for accurately detecting vibration transmitted to a rigid body, particularly provide a toilet seat apparatus for accurately detecting body movement of a user transmitted to a toilet seat. There are provided pressing means (amplifying means) (27) for amplifying vibration by body movement of a user transmitted to an upper lid (rigid body) (6) of a toilet seat apparatus (5), and a piezoelectric sensor (vibration detecting sensor) (9) for detecting the amplified vibration and therefore, even when the toilet seat is hardly deformed by the body movement of the user transmitted to the toilet seat, the body movement of the user transmitted to the toilet seat is detected by the piezoelectric sensor (vibration detecting sensor) (9) by amplifying the body movement by the pressing means (amplifying means) (27) and therefore, the body movement of the user transmitted to the toilet seat can accurately be detected.

Abstract: The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.

Abstract: A subject of the present invention is to provide a door handle device capable of controlling its opening/closing action by using a piezoelectric sensor that has a flexible structure and can attain an enough sensitivity even by a light touch, and a keyless entry system having the same. A door handle device (100) that is able to open a lock of a door locking means, which is provided to a door (13) with a handle (11) used for an opening/closing operation to lock an opening operation of the door (13), by an operation of the handle, includes a piezoelectric sensor (15) formed of a piezoelectric element fitted to the handle (11) and having a flexibility, and a controlling portion for receiving a sensed signal of the piezoelectric sensor (15) generated by a touch on the handle (11) to open the lock of the door locking means.

Abstract: Conventionally, since there has been a problem that with a pressure sensor 3 provided on an openable and closable door such as a sliding door 2, when a contact of an object such as the hand cannot be detected, the openable and closable door continues a closing operation even in the event that the hand is removed in order to avoid a risk of being caught, when a human body exists in the vicinity, the openable and closable door which is being closed collides with the human body.