Patents by Inventor Shigeki Yokota

Shigeki Yokota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4862241
    Abstract: The inventive semiconductor integrated circuit device comprises a plurality of regularly disposed elementary units, each including a P channel MOS FET element paired with and an N channel MOS FET element. Desired ones of the elementary units each comprise a MOS field effect transistor having an ordinary form of a source-drain region formed by a diffusion region, while the remaining elementary units each have a diffusion region selectively connected to serve as a resistive element. Consequently, a desired circuit can be implemented without a resistive element being formed on each elementary unit.
    Type: Grant
    Filed: December 11, 1985
    Date of Patent: August 29, 1989
    Assignee: Sanyo Electric Co. Ltd.
    Inventors: Yasuhiro Ashida, Shigeki Yokota