Abstract: An air conditioner includes a housing having a first outlet and a second outlet, a first channel communicating with the first outlet, a second channel communicating with the second outlet, a tank unit configured to hold water for cooling first air and second air, the first air flowing through the first channel, the second air flowing through the second channel, a cooling unit configured to cool the first air by heat of vaporization of water held in the tank unit, a water supply channel for supplying water held in the tank unit to the cooling unit, and a water recovery channel for collecting water remaining in the cooling unit to the tank unit.

Abstract: A semiconductor device includes a substrate, a semiconductor layer provided on the substrate and having a plurality of GaN channel layers and a plurality of AlGaN barrier layers which are alternately laminated from a substrate side, a source electrode and a drain electrode electrically connected to the GaN channel layers, and a gate electrode provided between the source electrode and the drain electrode to control a potential of the semiconductor layer, wherein an Al composition ratio of an AlGaN barrier layer closest to the substrate is smaller than that of an AlGaN barrier layer second closest to the substrate.

Abstract: A semiconductor device includes a barrier layer having a nitrogen polarity on an upper surface, a channel layer on the barrier layer, the channel layer having a nitrogen polarity on an upper surface, a first cap layer on the channel layer, the first cap layer having a nitrogen polarity on an upper surface, and a dielectric film in contact with the upper surface of the first cap layer. The first cap layer is an aluminum nitride layer.

Abstract: In a deflector device, when an external force acts on an deflector body while at a deployed position such that the deflector body is rotated in a stowing direction, even if further rotation of the deflector body in the stowing direction is restricted, the deflector body is rotated to the deployed position by an urging force of a torsion coil spring when the external force acting on the deflector body is released. This enables the deflector body to be rotated to the deployed position from anywhere over an entire rotatable range in the stowing direction by the urging force of the torsion coil spring. Thus, the torsion coil spring is able to rotate the deflector body to the deployed position in a suitable manner.

Abstract: An air conditioner includes a housing having a first outlet and a second outlet, a first channel communicating with the first outlet, a second channel communicating with the second outlet, a tank unit configured to hold water for cooling first air and second air, the first air flowing through the first channel, the second air flowing through the second channel, a cooling unit configured to cool the first air by heat of vaporization of water held in the tank unit, a water supply channel for supplying water held in the tank unit to the cooling unit, and a water recovery channel for collecting water remaining in the cooling unit to the tank unit.

Abstract: An air conditioner according to an aspect of the present disclosure includes a sensible heat exchanger, an exchanger water supply, an exhaust-air evaporative filter, and a filter water supply. The sensible heat exchanger includes a supply air channel and an exhaust air channel. The exchanger water supply supplies water to the exhaust air channel of the sensible heat exchanger. The exhaust-air evaporate filter is for exhaust air to pass through. The exhaust-air evaporate filter is located upstream of the sensible heat exchanger in a flow direction of exhaust air flowing through the exhaust air channel of the sensible heat exchanger. The filter water supply supplies water to the exhaust-air evaporate filter.

Abstract: A method of manufacturing a semiconductor device comprises steps of: forming a semiconductor stack by growing an AlGaN layer or an InAlN layer, an AlN layer, and a GaN layer on a substrate in this order; forming a recess in the semiconductor stack by a dry etching from a surface of the semiconductor stack, the surface being opposite to the substrate; growing a GaN region in the recess; and forming an ohmic electrode on the GaN region; wherein in the forming of the recess, the dry etching is stopped in response to the recess reaching the AlN layer.

Abstract: In a lift-up buckle device, a worm wheel is engaged with a screw drive. When a worm is rotated in a forward direction and causes the screw drive to move downward, the worm moves the worm wheel downward. On the other hand, when the worm is rotated in a reverse direction and causes the screw drive to move upward, the worm moves the worm wheel upward. Consequently, the worm wheel may be stably engaged with the screw drive, and the worm wheel and worm may be stably mated.

Abstract: In a door mirror device for a vehicle, when a driving body is moved rotationally towards an upper side, a gear plate is moved towards a lower side so that urging force applied from a coil spring to the driving body is decreased. In contrast, when the driving body is moved rotationally towards the lower side, the gear plate is moved towards the upper side so that the urging force applied from the coil spring to the driving body is increased. As a result, it is possible to reduce a difference between a load that is applied in order to move the driving body rotationally towards the upper side and the load that is applied in order to move the driving body rotationally towards the lower side.

Abstract: In this shift device, a worm, a detent gear, and a rotation shaft (including a detent pin) of a lever are rotated by a motor being driven, causing the lever to pivot. At all shift positions of the lever, the detent pin urges the detent gear toward a side of a meshed position between the detent gear and the worm. This enables rattling between the detent gear and the worm to be suppressed at all shift positions of the lever.

Abstract: A wavelength conversion member includes a support and a wavelength conversion layer including a first phosphor having a composition represented by Formula (1) and having an emission peak wavelength in a range from 550 nm to 620 nm, and a second phosphor having a different emission peak wavelength and/or a full width at half maximum from the first phosphor. An amount of the first phosphor in the wavelength conversion layer is in a range from 20 mass % to 80 mass % relative to a total amount of the phosphors In Formula (1), M1 represents at least one of rare earth elements other than La and Ce, a total molar content percentage of Y, Gd, and Lu in M1 is 90% or more, and p, q, r, and s satisfy 2.7?(p+q+r)?3.3, 0?r?1.2, 10?s?12, and 0<q?1.2.

Abstract: A suturing device includes a plurality of suture needles, a first-thread holding mechanism, a needle moving mechanism, and a thread turning structure. The thread turning structure is configured to locally turn a portion of a first thread hooked on a distal end portion of each of a plurality of suture needles in the first thread stretched in a first direction around a needle axis thereof such that the portion of the first thread extends in a direction along a third direction intersecting the first direction and a second direction, in a state where the plurality of suture needles have been moved in the second direction. Each of the plurality of suture needles has a side surface formed with a threading recessed groove extending through the side surface in the first direction in a state where each of the plurality of suture needles has been moved in the second direction.

Abstract: An air conditioner includes a housing having a first outlet and a second outlet, a first channel communicating with the first outlet, a second channel communicating with the second outlet, a sensible heat exchanger to exchange sensible heat between a first air flowing through the first channel and a second air flowing through the second channel, a first vaporization filter to cool the first air by latent heat of water and a second vaporization filter to cool the second air by latent heat of water. The first vaporization filter is disposed downstream of the sensible heat exchanger in a flow direction of the first air. The second vaporization filter is disposed upstream of the sensible heat exchanger in a flow direction of the second air.

Abstract: Provided is a fluorescent material with high brightness. The fluorescent material includes a nitride fluorescent material comprising La, Ce, Si, and N; and a first phosphorus compound disposed on a surface of the nitride fluorescent material. The first phosphorus compound includes at least one selected from the group consisting of lanthanum phosphate, lanthanum hydrogen phosphate, and hydrates thereof. A content of phosphorus atoms in the fluorescent material is 0.07% by mass or higher and 0.8% by mass or lower.

Abstract: Provided is a method for producing a nitride phosphor. The method includes obtaining a first heat-treated product having a crystallite diameter of not less than 150 nm by subjecting a compound containing at least one rare-earth element selected from the group consisting of Y, La, Ce, Lu, and Gd to heat treatment at a temperature within a range of 800° C. to 1800° C.; and obtaining a second heat-treated product by subjecting a mixture containing the first heat-treated product and a raw material contained as required to heat treatment at a temperature within a range of 1200° C. to 1800° C. The raw material contains an M source containing at least one rare-earth element M selected from the group consisting of Y, Lu, and Gd; an La source; an Si source; and a Ce source. The mixture is prepared with the raw materials such that a fed composition is represented by a Formula of LawMxSi6Ny:Cez. In this Formula, w, x, y, and z satisfy 0.5?w?4.5, 0<x?1.5, 0?y?12, 0<z?1.5, 0.15<(x+z)<3.0, and 3.0?(w+x+z)?7.5.

Abstract: A semiconductor device including: a substrate; a channel layer that is provided on the substrate and that includes Ga and N; and a barrier layer that is provided on the channel layer and includes a first surface that faces the channel layer and a second surface opposite to the first surface, the barrier layer containing Al, N, and at least one of Ga or In; wherein an average value of an Al composition in the barrier layer is 30% or more, and wherein in an Al composition profile in the barrier layer, a slope of a first straight line connecting a first point and a second point is 20%/nm or more and 65%/nm or less.

Abstract: Provided is a fluorescent material with high brightness. The fluorescent material includes a nitride fluorescent material comprising La, Ce, Si, and N; and a first phosphorus compound disposed on a surface of the nitride fluorescent material. The first phosphorus compound includes at least one selected from the group consisting of lanthanum phosphate, lanthanum hydrogen phosphate, and hydrates thereof. A content of phosphorus atoms in the fluorescent material is 0.07% by mass or higher and 0.8% by mass or lower.

Abstract: Provided is a phosphor having superior light-emitting properties. A phosphor composition includes: a nitride phosphor that contains, in a composition thereof, an element M that is at least one selected from the group consisting of rare earth elements except cerium, silicon, nitrogen, and cerium; and an oxyfluoride. In the phosphor composition, a content of the oxyfluoride relative to the phosphor composition is 1.5% by mass or higher and 10% by mass or lower according to an X-ray diffraction reference intensity ratio method.

Abstract: In an actuator a shaft and a motor are coupled together by a coupling mechanism. The coupling of the shaft to the motor by the coupling mechanism is released by rotational operation force on the shaft, and a parking position of a transmission is released by the shaft being rotated. There is accordingly no need for a device to release the coupling between the shaft and the motor by the coupling mechanism, enabling a simple configuration for the actuator.

Abstract: A method of manufacturing a semiconductor device comprises steps of: forming a semiconductor stack by growing an AlGaN layer or an InAlN layer, an AlN layer, and a GaN layer on a substrate in this order; forming a recess in the semiconductor stack by a dry etching from a surface of the semiconductor stack, the surface being opposite to the substrate; growing a GaN region in the recess; and forming an ohmic electrode on the GaN region; wherein in the forming of the recess, the dry etching is stopped in response to the recess reaching the AlN layer.