Abstract: A metal member-buried ceramics article which can uniformalize adsorption force or adsorption force and distribution of temperature in plane, decrease pollution of a semiconductor wafer, and suppress warping of the whole body is provided. This article has a three layer structure comprising, between an upper layer 2 and a lower layer 3 composed of an AlN sintered body in the form of plate, an intermediate connecting layer 4 having a thickness of 0.5 to 10 mm composed of a sintered body of defatted AlN powder and a metal electrode 5 in contact with the inner surface of the upper layer or lower layer or a metal electrode in contact with the inner surface of the upper layer and a metal electric resistor in contact with the inner surface of the lower layer sandwiched between them, and has means for suppressing a stress remaining in sintering the defatted AlN powder.

Abstract: The aluminum nitride sintered body of the invention has a thermal conductivity equivalent to that of a high purity aluminum nitride sintered body and a volume resistivity of 1014 &OHgr;·cm or less, and is composed of aluminum nitride phase and yttrium aluminum oxide phase formed at grain boundaries of aluminum nitride phase, where the yttrium aluminum oxide phase is 0.5 to 10 wt % in extremes for aluminum nitride phase, and contains at least one kind of lanthanide element 0.1 to 20 atom % in extremes for yttrium element.