Abstract: A production line system includes a cooling processing step of cooling a coolant for processing machines (lathes) of work, and a heating processing step of heating washing fluid for a washing machine which washes the work after processing by the lathes. The heating processing step and the cooling processing step are performed by a heat pump in one heat pump cycle. Further, a heat balance between heating in the heating processing step and cooling in the cooling processing step is adjusted with the setting temperature of the washing fluid and the setting temperature of the coolant.

Abstract: A production line system includes a cooling processing step of cooling a coolant for processing machines (lathes) of work, and a heating processing step of heating washing fluid for a washing machine which washes the work after processing by the lathes. The heating processing step and the cooling processing step are performed by a heat pump in one heat pump cycle. Further, a heat balance between heating in the heating processing step and cooling in the cooling processing step is adjusted with the setting temperature of the washing fluid and the setting temperature of the coolant.

Abstract: A laser diode chip is scanned and irradiated with laser light penetrating the interior of crystal of a chip and having a wavelength which produces no electromotive force by optical excitation. When the temperature of a chip 1 increases through irradiation, a thermoelectromotive force is generated in a crystal abnormal part of the chip 1 by a Seebeck effect. This thermoelectromotive force is detected from a change of a voltage or current appearing between the anode and cathode of the chip 1 and displayed at a CRT to thereby detect defects inside the crystal.

Abstract: A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate an electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, a thermo-electromotive force is generated in a crystalline abnormal part of the wafer by a Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on a CRT.

Abstract: A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate an electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, a thermo-electromotive force is generated in a crystalline abnormal part of the wafer by a Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on a CRT.

Abstract: A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate an electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, a thermo-electromotive force is generated in a crystalline abnormal part of the wafer by a Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on a CRT.

Abstract: A semiconductor laser apparatus comprises a semiconductor laser chip disposed on a base through an electrode area, wherein the electrode area comprises at least a first electrode layer having no opening and a second electrode layer having an opening from the semiconductor laser chip side, the second electrode layer is formed of materials different from those of the first electrode layer and the opening of the second electrode layer is shaped in such a manner as to allow observation of a light emitting portion of the semiconductor laser chip by etching the first electrode layer using the second electrode layer as a mask. Another semiconductor laser apparatus comprises first and second electrode areas on the upper surface and the lower surface of the semiconductor laser chip, wherein both the first and the second electrode areas comprise at least the first electrode layer having no opening and the second electrode layer having the opening from the semiconductor laser chip side.

Abstract: A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, thermo-electromotive force is generated in a crystalline abnormal part of the wafer by Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on CRT.

Abstract: A laser diode chip is scanned and irradiated with laser light penetrating the interior of crystal of a chip and having a wavelength which produces no electromotive force by optical excitation. When the temperature of a chip 1 increases through irradiation, a thermoelectromotive force is generated in a crystal abnormal part of the chip 1 by a Seebeck effect. This thermoelectromotive force is detected from a change of a voltage or current appearing between the anode and cathode of the chip 1 and displayed at a CRT to thereby detect defects inside the crystal.

Abstract: The system for providing information on quality and reliability according to the present invention includes: a first information communication terminal for outputting, as information on a side of a maker producing an optical semiconductor device, information gathered at a first time regarding a characteristic of the device; a second information communication terminal for outputting, as information on a side of a user using the device, information gathered at a second time regarding the characteristic of the device; and an information processing apparatus that (1) computes a rate of change in the characteristic of the device from the first time to the second time on the basis of the information outputted from the first and second information terminals, and (2) outputs a signal representing an abnormality to at least one of the first and second information terminals when the computed rate of change is out of a predetermined numerical range.

Abstract: A semiconductor laser device having a chip electrode of a semiconductor laser is provided. The laser device includes a first electrode layer of a first material, and a second electrode layer of a second material. The second electrode layer has an opening corresponding to a light-emitting section of the laser, and is formed on a face of the first electrode layer. The first material of the first electrode layer is different than the second material of the second electrode layer.

Abstract: The system for providing information on quality and reliability according to the present invention comprises: a first information communication terminal for outputting at least one of step information (A), step information (B), step information (C) and step information (D) as information on the side of a maker producing an optical semiconductor device; a second information communication terminal for outputting at least one of step information (E), step information (F), and step information (G) as information on the side of an user using the device; and an information processing apparatus connected to the first and second information communication terminals through a communication network, wherein the information processing apparatus computes a rate of change in the characteristic of the device from the steps on the maker side to the steps on the user side on the basis of information outputted from the first and second information terminals, and outputs a signal for representing an abnormality to at least one

Abstract: A semiconductor laser apparatus comprises a semiconductor laser chip disposed on a base through an electrode area, wherein the electrode area comprises at least a first electrode layer having no opening and a second electrode layer having an opening from the semiconductor laser chip side, the second electrode layer is formed by materials different from those of the first electrode layer and the opening of the second electrode layer is shaped in such a manner as to be able to observe a light emitting portion of said semiconductor laser chip by etching the first electrode layer using the second electrode layer as a mask. A semiconductor laser apparatus comprises a first and a second electrode areas on the upper surface and the lower surface of the semiconductor laser chip, wherein both the first and the second electrode areas comprise at least the first electrode layer having no opening and the second electrode layer having the opening from the semiconductor laser chip side.

Abstract: A light emitting element includes a light emitting portion emitting light by the supply of electric power thereto, an enclosing portion having electrical conductivity and having the light emitting portion enclosed therein, first and second electrode layers formed on the two opposed surfaces of the enclosing portion and to which electric power for causing the light emitting portion to emit light is supplied, and an opening hole formed in at least one of the first and second electrode layers and permitting the light emitting portion to be observed through the enclosing portion from a direction which is not affected by a beam emitted from the light emitting portion. The specification also discloses a method of manufacturing such a light emitting element.