Abstract: In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using the applicator, which comprise a circular waveguide having a surface provided with a plurality of slots for radiating microwaves, wherein the centers of the plurality of slots are offset in a direction parallel to the surface with respect to the center of the circular waveguide.

Abstract: A plasma-processing apparatus includes a vacuum chamber for accommodating an object to be processed and for providing plasma processing to the object under a vacuum or reduced environment, an impedance matching unit configured for impedance matching, the impedance matching unit being provided between the vacuum chamber and a microwave oscillator for generating microwaves, and a controller for controlling actions of the impedance matching unit based on a relationship among a matching state of the impedance matching unit, a microwave strength distribution necessary to generate plasma for the matching state, and a matching state of the impedance matching unit which minimizes a reflected wave during the plasma processing.

Abstract: In order to keep the balance of microwave plasma density to suppress uneven processing in the circumferential direction of a circular waveguide, in a plasma processing apparatus comprising a plasma generation chamber, a support means for supporting an article, a gas introducing means, and an evacuation means, two introducing ports are provided in a microwave applicator for supplying microwaves through a dielectric window, and microwaves distributed with a junction circuit are guided to the introducing ports such that electric field vectors are in predetermined directions.

Abstract: In order to carry out ashing at a high efficiency without leaving any residue and also to inhibit corrosion of an underlying material of a resist and further to prevent particle contamination, a photoresist is ashed at a low temperature to be removed and a residue of the photoresist is removed at a high temperature.

Abstract: In order to carry out ashing at a high efficiency without leaving any residue and also to inhibit corrosion of an underlying material of a resist and further to prevent particle contamination, a photoresist is ashed at a low temperature to be removed and a residue of the photoresist is removed at a high temperature.

Abstract: In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using the applicator, which comprise a circular waveguide having a surface provided with a plurality of slots for radiating microwaves, wherein the centers of the plurality of slots are offset in a direction parallel to the surface with respect to the center of the circular waveguide.