Abstract: A substrate device has, on a substrate, a first conductive film, a first insulating film formed thereon, a second insulating film bonded thereon, and a second conductive film formed thereon. A contact hole connecting the first and second conductive films is opened so as to penetrate through a bonding interface thereof. The area of the contact hole penetrating through the bonding interface is not eroded by an etching solution. Thus, where manufacturing a substrate device in which a contact hole penetrating through a bonding interface needs to be formed, it is unlikely that a defect will occur in the area where the contact hole passing through the bonding interface, thereby enhancing device reliability and manufacturing yield.

Abstract: The invention provides a liquid crystal panel substrate having transistors and reflectors connected to the transistors on a substrate to allow bright reflection display of high quality at wide viewing angles by providing the most suitable reflection characteristics to the reflectors. Under the reflectors, first conductive layers are overlaid in regions corresponding to the reflectors and formed in a concave-convex condition by forming a large number of openings. Also, in a plan view, a light-shielding film covering gaps between the reflectors is formed of the second conductive layer, and may have no openings.

Abstract: An electrooptical substrate device has pixel electrodes and pixel-switching TFTs connected thereto, on a substrate. The TFT is a P-channel TFT of an SOI structure that does not have a body contact. Due to this, a transistor is architected in each pixel that is suited to broaden the opening area in each pixel, and having comparatively high performance, thereby enabling bright, high-quality image display.

Abstract: An electrooptical substrate device has pixel electrodes and pixel-switching TFTs connected thereto, on a substrate. The TFT is a P-channel TFT of an SOI structure that does not have a body contact. Due to this, a transistor is architected in each pixel that is suited to broaden the opening area in each pixel, and having comparatively high performance, thereby enabling bright, high-quality image display.

Abstract: To provide an electrooptic device which can reliably suppress a substrate floating effect, such as a parasitic bipolar phenomenon, in an SOI-MIS transistor, and which has superior electrical characteristics. An electrooptic device (liquid crystal light valve) of the present invention uses, as one substrate, a composite substrate including a quartz substrate (main substrate 10A) having a first coefficient of thermal expansion, an insulating layer (insulating underlayer 12) formed on the quartz substrate, and a single-crystal silicon layer (semiconductor layer 1a) formed on the insulating layer and having a second coefficient of thermal expansion. A TFT 30 that uses the single-crystal silicon layer as a channel region 1a′ is formed on the insulating layer, and at least one line defect D exists in the single-crystal silicon layer that forms the channel region 1a′.

Abstract: A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.

Abstract: An electrooptical substrate device has pixel electrodes and pixel-switching TFTs connected thereto, on a substrate. The TFT is a P-channel TFT of an SOI structure that does not have a body contact. Due to this, a transistor is architected in each pixel that is suited to broaden the opening area in each pixel, and having comparatively high performance, thereby enabling bright, high-quality image display.

Abstract: A substrate device has, on a substrate, a first conductive film, a first insulating film formed thereon, a second insulating film bonded thereon, and a second conductive film formed thereon. A contact hole connecting the first and second conductive films is opened so as to penetrate through a bonding interface thereof. The area of the contact hole penetrating through the bonding interface is not eroded by an etching solution. Thus, where manufacturing a substrate device in which a contact hole penetrating through a bonding interface needs to be formed, it is unlikely that a defect will occur in the area where the contact hole passing through the bonding interface, thereby enhancing device reliability and manufacturing yield.

Abstract: A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.

Abstract: A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.

Abstract: A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.

Abstract: A channel region of a semiconductor layer has an extending portion. The terminal of the extending portion is connected to a first contact hole. The first contact hole is connected to a connecting line. The connecting line is connected to the first contact hole at one end, as described above, extends directly above a capacitor line in the Y direction, and is connected to the capacitor line via a second contact hole at this position.

Abstract: In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of the excessive carriers accumulated in the semiconductor layer functioning as a channel region of the thin film transistor on a substrate for electro-optical apparatuses is achieved.

Abstract: In a conventional reflective liquid crystal panel (liquid crystal panel) using a semiconductor substrate, since storage capacitors are formed on the surface of the substrate, with a small pixel size, a sufficient storage capacitor (50 to 100 fF) cannot be ensured, and a voltage necessary for driving a liquid crystal cannot be held. The reflective electrode of each of pixels serves as a conductive layer of one of a pair of electrodes which constitute a storage capacitor, and the other conductive layer of the storage capacitor is formed below the reflective electrode through an insulation film so that the other conductive layer is fixed at the predetermined potential.

Abstract: In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of the excessive carriers accumulated in the semiconductor layer functioning as a channel region of the thin film transistor on a substrate for electro-optical apparatuses is achieved.