Abstract: A method for evaluating a structure is disclosed, the structure including a base material containing at least one kind of metal selected from the group consisting of hydrogen storage metals and hydrogen storage alloys, an intermediate layer provided on the base material and stacked alternately with a first layer containing low work function substances relatively lower in work function than the metal and a second layer containing the metal, and a surface layer provided on the intermediate layer and containing the metal, wherein the method includes measuring a change in polarization between incident light and reflected light by irradiating the surface layer with light, while holding the structure at a predetermined temperature, and comparing a measurement value of the change in polarization with a threshold of a change in polarization of a structure prepared in advance and evaluating a soundness of the structure based on comparison results.

Abstract: A method for evaluating a structure is disclosed, the structure including a base material containing at least one kind of metal selected from the group consisting of hydrogen storage metals and hydrogen storage alloys, an intermediate layer provided on the base material and stacked alternately with a first layer containing low work function substances relatively lower in work function than the metal and a second layer containing the metal, and a surface layer provided on the intermediate layer and containing the metal, wherein the method includes measuring a change in polarization between incident light and reflected light by irradiating the surface layer with light, while holding the structure at a predetermined temperature, and comparing a measurement value of the change in polarization with a threshold of a change in polarization of a structure prepared in advance and evaluating a soundness of the structure based on comparison results.

Abstract: A nuclide transmutation device and method which enable nuclide transmutation to be performed in a small-scale device compared with large-scale devices are disclosed. The device comprises a structure, and high and low deuterium concentration units are disposed on either side of the structure so as to sandwich the structure therebetween, wherein an electrolytic solution containing heavy water is supplied to the high deuterium concentration unit and is electrolyzed to generate deuterium, thereby producing a state of high deuterium concentration near the high deuterium concentration unit side surface and placing the low deuterium concentration unit in a state of low deuterium concentration relative to the high deuterium concentration unit, causing the deuterium to penetrate through the structure from the high deuterium concentration unit toward the low deuterium concentration unit, and subjecting a substance to nuclide transmutation by reaction with the deuterium.

Abstract: A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

Abstract: Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn1-xMgxO (0.096?x?0.183).

Abstract: A high-efficiency triple-junction thin-film photovoltaic device in which the haze ratio is high and the short-circuit current values obtained from each of the photovoltaic layers are equalized. A thin-film photovoltaic device comprises a transparent electrode layer and three silicon-based photovoltaic layers stacked in sequence on a substrate. The transparent electrode layer has at least one opening formed by an etching treatment that exposes the surface of the substrate, and the haze ratio of the transparent electrode layer relative to light of a broad wavelength region is at least 60%.

Abstract: Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn1-xMgxO (0.096?x?0.183).

Abstract: A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

Abstract: A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, and the surface of the second transparent electrode layer 6 on the surface of the back electrode layer 4 has a fine uneven texture, for which the surface area magnification ratio relative to the projected surface area is not less than 10% and not more than 32%.

Abstract: An optical system includes a fluoride compound and has surfaces facing and exposed to plasma installed in an optical equipment which has an inner zone where the plasma exists. A 2 nm-20 nm protective film of a highly plasma-resistant material is formed on the surface of the fluoride compound that is exposed to the plasma.

Abstract: The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device comprising a first transparent electrode layer, an electric power generation layer, a second transparent electrode layer and a back electrode layer on a substrate, wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer and the back electrode layer is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm.

Abstract: A photovoltaic device having improved conversion efficiency as a result of an increase in the open-circuit voltage is provided. The photovoltaic device comprises a photovoltaic layer having a stacked p-layer, i-layer and n-layer, wherein the p-layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 25%, and the crystallization ratio of the p-layer is not less than 0 but less than 3. Alternatively, the n-layer may be a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, wherein the crystallization ratio of the n-layer is not less than 0 but less than 3. Alternatively, an interface layer may be formed at the interface between the p-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 30%.

Abstract: An optical system has fluoride compounds provided in an environment exposed by vacuum ultraviolet light or plasma light, which has higher photon energy than an absorption wavelength of a base stock of the optical system. 1-layer of a protective film of SiO2 or metal oxides having a film thickness of 2-20 nm is formed at least on the light irradiation side (inner side) of the optical system to prevent the stripping of the fluorine atoms from the surface of the optical system. In addition, the protective film is a 1-layer film selected from one of SiO2, MgO, TiO2, or ZrO2.

Abstract: Provided are a security gate system and a security gate control method capable of accurately inspecting inspection targets in a short period of time. The security gate system includes a main route 2; a mass spectrograph 3 for analyzing a sample (for example, a ticket) obtained from an inspection target (for example, a facility user at an airport, etc.) moving in the main route 2; at least one branch route 10 that is divided from the main route 2 at the downstream side of a position where the sample is obtained in the moving direction of the inspection target; gates (a first gate 5 and a second gate 6), which are provided at branch sections of the branch route 10 for switching a flow path of the inspection target; and a control apparatus 20 for performing control to switch between the gates 5 and 6 based on an analysis result of the mass spectrograph 3.

Abstract: The objectives of the present invention are to prevent or inhibit the deterioration effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH ions, ozone, O2 ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals.

Abstract: An optical properties restoration apparatus improves reliability and longevity of optical properties of an optical system, lying upon a vacuum boundary, by preventing, suppressing, or improving degradation of optical properties. The apparatus includes creating the near vacuum zone to excite an oxidation reaction of carbon, generating a flow of an oxygen atom-containing gas such as water gas or oxide gas in the near vacuum zone, and supplying active energy in the near vacuum zone to cause a carbon oxidation reaction between the oxygen atom-containing gas and the carbon. The near vacuum zone faces the lighting surfaces of the optical system and a lower limit value for a partial pressure of the gases containing oxygen atoms that is supplied to the near vacuum zone is set to a level over a speed of the carbon buildup that deposits on the lighting surfaces of the optical system.

Abstract: The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH ions, ozone, O2-ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals.

Abstract: The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH? ions, ozone, O2? ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals.

Abstract: The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH.ions, ozone, O2.ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals.

Abstract: The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH— ions, ozone, O2— ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals.