Abstract: Provided is an optical member, including: a substrate having an at least partially curved surface; a concave-convex structure at an outermost surface, the concave-convex structure being prepared by hydrothermal treatment of a layer formed by gas-phase deposition of at least one of simple aluminum and a compound containing aluminum on the substrate; and a dielectric layer formed by gas-phase deposition between the substrate and the concave-convex structure.

Abstract: A semiconductor device includes a semiconductor circuit on an insulated metal substrate, which includes an anodized film formed on at least one side of an Al substrate, wherein the Al substrate has a potential higher than an average potential of the semiconductor circuit when the semiconductor circuit is driven.

Abstract: An insulating layer provided metal substrate, including a metal substrate having a metallic aluminum on at least one surface and a composite structure layer formed of a porous aluminum oxide film provided on the metallic aluminum by anodization and an alkali metal silicate film covering pore surfaces of the porous aluminum oxide film, in which the mass ratio of silicon to aluminum in the composite structure layer is 0.001 to 0.2 at an arbitrary position within a region between a position 1 ?m to the composite structure layer side in thickness from the interface between the composite structure layer and the metallic aluminum and a position 1 ?m to the composite structure layer side in thickness from the interface between the composite structure layer and an upper layer on the opposite side of the metallic aluminum.

Abstract: Provided is an optical member, including: a substrate having an at least partially curved surface; a concave-convex structure at an outermost surface, the concave-convex structure being prepared by hydrothermal treatment of a layer formed by gas-phase deposition of at least one of simple aluminum and a compound containing aluminum on the substrate; and a dielectric layer formed by gas-phase deposition between the substrate and the concave-convex structure.

Abstract: A solar cell device is formed of an insulating layer provided metal substrate and a photoelectric conversion circuit, which includes a photoelectric conversion layer, an upper electrode, and a lower electrode, formed on the substrate. The substrate is constituted by a metal substrate and a porous Al anodized film. The metal substrate is formed of a base material of a metal having a higher rigidity, a high heat resistance, and a smaller linear thermal expansion coefficient than Al and an Al material integrated by pressure bonding to at least one surface thereof, and the porous Al anodized film is formed on a surface of the Al material.

Abstract: A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix.

Abstract: A semiconductor device includes a semiconductor circuit on an insulated metal substrate, which includes an anodized film formed on at least one side of an Al substrate, wherein the Al substrate has a potential higher than an average potential of the semiconductor circuit when the semiconductor circuit is driven.

Abstract: A solar cell device is formed of an insulating layer provided metal substrate and a photoelectric conversion circuit, which includes a photoelectric conversion layer, an upper electrode, and a lower electrode, formed on the substrate. The substrate is constituted by a metal substrate and a porous Al anodized film. The metal substrate is formed of a base material of a metal having a higher rigidity, a high heat resistance, and a smaller linear thermal expansion coefficient than Al and an Al material integrated by pressure bonding to at least one surface thereof, and the porous Al anodized film is formed on a surface of the Al material.

Abstract: A semiconductor device is provided with a porous structure layer formed by silicone resin between a substrate and a semiconductor element. Alternatively, a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing at least one type of alkoxysilane selected from a group consisting of monoalkoxysilane, dialkoxysilane, and trialkoxysilane, and tetraalkoxysilane is provided between the substrate and the semiconductor element. As a further alternative, an adhesion layer formed by a compound obtained by hydrolyzing and condensing an alkoxysilane is provided on a resin substrate, and a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing an alkoxysilane, is provided on the adhesion layer.

Abstract: Piezoelectric performance is improved in a piezoelectric ceramic having a perovskite-type crystal structure expressed by a general formula ABO3 and the B-site element including niobium. The piezoelectric ceramic has a perovskite-type crystal structure in which plural octahedrons formed of oxygen are arranged to share vertices thereof and elements are located at a center of eight octahedrons and at a center of each octahedron; wherein an element located at the center of eight octahedrons is A-site element, an element located at the center of each octahedron is B-site element, and a general formula of the perovskite-type crystal structure is ABO3; the B-site element includes niobium (Nb); and bismuth (Bi) content in composition of the piezoelectric ceramic is 100 ppm by weight or less.

Abstract: A backing material that is advantageous in insulation property and can realize a desired acoustic impedance without making the cross-linking and curing reaction of elastomer or resin as a parent material unstable. The backing material is provided on a backside of vibrators for transmitting and/or receiving ultrasonic waves in an ultrasonic probe, and the backing material includes: a parent material containing elastomer or resin and having an insulation property; and composite powder dispersed to fill the parent material, and the composite powder includes powder of a material having a larger acoustic impedance than that of the parent material and an insulation coating for covering a surface of the powder, and the insulation coating contains an oxide of an element of group XIII to group XV except for carbon (C), nitrogen (N), phosphorus (P).

Abstract: A photo-conductor, which is adapted for use in constituting a radiation detector and which is capable of forming electric charges by being exposed to radiation, contains Bi12MO20, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti. The photo-conductor has characteristics such that a proportion of a diffuse reflectivity at a wavelength of 450 nm with respect to the diffuse reflectivity at a wavelength of 600 nm is equal to at least 75%.

Abstract: A backing material that is advantageous in insulation property and can realize a desired acoustic impedance without making the cross-linking and curing reaction of elastomer or resin as a parent material unstable. The backing material is provided on a backside of vibrators for transmitting and/or receiving ultrasonic waves in an ultrasonic probe, and the backing material includes: a parent material containing elastomer or resin and having an insulation property; and composite powder dispersed to fill the parent material, and the composite powder includes powder of a material having a larger acoustic impedance than that of the parent material and an insulation coating for covering a surface of the powder, and the insulation coating contains an oxide of an element of group XIII to group XV except for carbon (C), nitrogen (N), phosphorus (P).

Abstract: A polycrystalline photo-conductor containing Bi12MO20, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti, is produced by hydrothermal synthesis processing. The photo-conductor is adapted for constituting a radiation imaging panel capable of recording radiation image information.

Abstract: A photo-conductor, which is adapted for use in constituting a radiation detector and which is capable of forming electric charges by being exposed to radiation, contains Bi12MO20, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti. The photo-conductor has characteristics such that a proportion of a diffuse reflectivity at a wavelength of 450 nm with respect to the diffuse reflectivity at a wavelength of 600 nm is equal to at least 75%.

Abstract: Piezoelectric performance is improved in a piezoelectric ceramic having a perovskite-type crystal structure expressed by a general formula ABO3 and the B-site element including niobium. The piezoelectric ceramic has a perovskite-type crystal structure in which plural octahedrons formed of oxygen are arranged to share vertices thereof and elements are located at a center of eight octahedrons and at a center of each octahedron; wherein an element located at the center of eight octahedrons is A-site element, an element located at the center of each octahedron is B-site element, and a general formula of the perovskite-type crystal structure is ABO3; the B-site element includes niobium (Nb); and bismuth (Bi) content in composition of the piezoelectric ceramic is 100 ppm by weight or less.