Abstract: A sputtering target containing a hexagonal laminar compound formed of indium oxide and zinc oxide and represented by In2O3(ZnO)m wherein m is an integer of 2 to 7 and further contains 0.01 to 1 at % of an oxide of a third element having a normal valence of 4 or more, and a transparent electrically conductive film formed therefrom. The sputtering target has a low volume resistivity and permits stable sputtering. The transparent electrically conductive film is excellent in etchability.

Abstract: A semiconductor device 1 obtained by depositing, on a substrate 2, a gate electrode 4 formed by a conductive thin film containing Mo atoms and Ag atoms, a gate insulating film 6, an ?-Si:H(i) film 8, a channel protection layer 10, an ?-Si:H(n) film 12, a source/drain electrode 14 formed by a conductive thin film containing Mo atoms and Ag atoms, a source/drain insulating film 16, and a drive electrode 18. By using a conductive thin film containing Mo atoms and Ag atoms, the gate electrode 4 and the source/drain electrode 14 are formed to manufacture the semiconductor device 1. Thus, the conductive thin film for a semiconductor device, having high adhesion strength to a substrate, an insulating layer, and the like, a semiconductor device which operates stably without deteriorating the performance, and a method of efficiently manufacturing the conductive thin film and the semiconductor device can be provided.

Abstract: The present invention is directed to a sputtering target which inhibits formation of nodules during sputtering so as to form a transparent conductive film, thereby reliably forming the film, and to a transparent conductive film exhibiting excellent etching processability. The sputtering target is formed of a specific sintered metal oxide product composed of indium oxide, gallium oxide, and zinc oxide (1) or a specific sintered metal oxide product composed of indium oxide, gallium oxide, and germanium oxide (2).

Abstract: A sputtering target containing a hexagonal laminar compound formed of indium oxide and zinc oxide and represented by In2O3(ZnO)m wherein m is an integer of 2 to 7 and further contains 0.01 to 1 at % of an oxide of a third element having a normal valence of 4 or more, and a transparent electrically conductive film formed therefrom. The sputtering target has a low volume resistivity and permits stable sputtering. The transparent electrically conductive film is excellent in etchability.

Abstract: A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 &mgr;m or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably.

Abstract: A semiconductor device 1 obtained by depositing, on a substrate 2, a gate electrode 4 formed by a conductive thin film containing Mo atoms and Ag atoms, a gate insulating film 6, an &agr;-Si:H(i) film 8, a channel protection layer 10, an &agr;-Si:H(n) film 12, a source/drain electrode 14 formed by a conductive thin film containing Mo atoms and Ag atoms, a source/drain insulating film 16, and a drive electrode 18. By using a conductive thin film containing Mo atoms and Ag atoms, the gate electrode 4 and the source/drain electrode 14 are formed to manufacture the semiconductor device 1. Thus, the conductive thin film for a semiconductor device, having high adhesion strength to a substrate, an insulating layer, and the like, a semiconductor device which operates stably without deteriorating the performance, and a method of efficiently manufacturing the conductive thin film and the semiconductor device can be provided.

Abstract: Disclosed are a carrier for electrophotography, a method for producing the same carrier, and a developing agent using the same. The carrier includes a carrier core material with magnetism and a high-molecular-weight polyethylene resin that coats the surface of the carrier core material, wherein the surface of the high-molecular-weight polyethylene resin coating the surface of the carrier core material is coated with a resin layer having an ability to control an electric charge and a thickness of 0.01-2 &mgr;m or with a particle layer having an ability to control an electric charge and a thickness of 0.01-2 &mgr;m. The carrier for electrophotography and the developing agent using the same allow free control of its electrification polarity and free adjustment of the amount of electrification, taking advantage of excellent properties of the carrier having a polyolefin-based resin coat.

Abstract: An electrophotographic carrier, which has high charging characteristics and an excellent durability, does not dull a color image and has an excellent moisture resistance is provided. A process for the production of the carrier and a developing agent for electrophotography using the carrier are also provided. The electrophotographic carrier comprises a carrier core material provided with magnetism and a coating layer formed on the surface of the carrier core material, the coating layer containing at least a hydrophobic white conductive material and a high molecular weight polyethylene resin.

Abstract: A carrier for electrophotography includes a carrier core material provided with magnetism and a coating layer which coats the surface of the carrier core material and includes a high molecular weight polyethylene resin having a weight average molecular weight of 50,000 or more. An outermost layer containing a magnetic powder having a three-dimensional form of a convex polyhedron is formed on the outermost surface of the coating layer.

Abstract: Disclosed is an electrophotographic carrier comprising a magnetic carrier core and a coating layer composed of a high molecular weight polyethylene resin with which the carrier core is coated, wherein the coating layer composed of a high molecular weight polyethylene resin includes a layer containing hydrophobic silica, a magnetic powder, and/or a micropowdered resin at least as the outermost layer.