Abstract: According to one embodiment, a storage apparatus comprises storage devices, a first selection module configured to select a first storage device in accordance with selection made by a user, a determination module configured to determine whether or not the first storage device can store data, a second selection module configured to select a second storage device when the determination module determines that the first storage device cannot store data, and a storage control module configured to store data in the first storage device when the determination module determines that the first storage device can store data, and to store data in the second storage device when the determination module determines that the first storage device cannot store data.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: Information on a use situation of a portable electronic apparatus possessed by a user is acquired from an illuminance sensor, a contact sensor, and a GPS portion as use situation-acquiring portions, and a volume of a sound outputted either to a speaker provided as an internal sound-outputting unit in the portable electronic apparatus or to an external sound-outputting unit such as a headphone is controlled in accordance with the acquired information. Thus, even when a plug of the headphone falls off from the portable electronic apparatus despite an intention of the user, an unpleasant sound is prevented from being outputted from the speaker to a circumference.

Abstract: According to one embodiment, there is provided a portable display device including a recording section which records a video file, a decoder section which decodes the video file and outputs a video/audio signal, a display section which displays a video picture on a screen based on the video/audio signal from the decoder section, a backlight section which irradiates a back side of the display section, and a control section which determines the video file to be reproduced based on attribute information and turns off the irradiation of the backlight section based on a determined result.

Abstract: In order to increase the flow rate of coolant liquid supplied to the nozzle (88) of a plasma torch (10) and to extend the life of the plasma torch (10), within the plasma torch (10), an electrode coolant liquid passage (60, 84, 85, 86, and 64 which supplies coolant liquid to an electrode (80), and a nozzle coolant liquid passage (56, 70, 92, 72 and 68) which supplies coolant liquid to the nozzle (88), are provided separately as independent coolant liquid passages which extend in parallel, and which are mutually electrically insulated from one another. Moreover, the flow rate of coolant liquid in the nozzle coolant liquid passage is greater than the flow rate of coolant liquid in the electrode coolant liquid passage.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends,there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: A cleaning processing jig is inserted into a bolt heater hole, and pollution such as extraneous matter on an inner surface of the hole is removed by a waste cloth. A penetration processing jig is inserted into the hole, and the penetrant is made to uniformly penetrate into the inner surface by a sponge onto which a penetrant is applied. Then, a developing processing jig is inserted into the hole, and the inner surface is developed by injecting a developer toward the inner surface from an injection tip provided on a head. When a predetermined time elapses after the developing processing, a visual inspection tool in which a visible head is attached to a tip of a pipe is inserted into the hole, and the inner surface is visually inspected through a light pipe connected to the visible head.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.

Abstract: The invention aims at providing a digital broadcasting-receiving apparatus which is not connected to a network, especially, a method of transmitting a program easy to receive, and a digital broadcasting-receiving apparatus which readily makes program update. A receiving apparatus (1) of the invention down loads an update program common to a plurality of receiving apparatuses using different control programs, and selects only a necessary module among a plurality of modules contained in the update program to rewrite the necessary module thus selected.

Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.

Abstract: In a reproducing apparatus for reproducing audio data, a central control section includes detection means for detecting playlists of plural kinds of formats, and detection means for detecting audio data not associated with playlists. The central control section reads out audio data from an audio data storage section, and discriminating the format of the audio data to detect playlists. In addition, the central control section detects the presence/absence of audio data not associated with playlists, and if audio data not associated with playlists is stored, processes a list of such audio data as one playlist. The central control section causes the detected playlists to be displayed on a display section, successively processes the audio data from a first one of the playlists, and outputs the processed data through a sound output section.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: A device for producing single-crystal ingot, provided with coolers (19) using a piping system through which cooling water failure caused by water leakage and at the same time to find out conditions for maximizing a production efficiency, the coolers (19) are disposed at portions of the inner sides of thermal shielding elements (18) and the lower ends (19a) of cooling pipes are so set as to be positioned up to 150 mm high from the surface (12a) of molten silicon liquid.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: Erythromycin A derivatives represented by the general formula wherein R1 is a 2-alkenyl group having 3 to 15 carbon atoms, an arylmethyl group, or an arylmethyl group substituted by 1 to 3 of a halogen atom, an alkoxy group 1 to 4 carbon atoms, a nitro group or an alkoxycarbonyl group having 2 to 6 carbon atoms, R2 is a substituted silyl group and R3 is a hydrogen atom or R2, are disclosed. These compounds are useful as intermediates of the anti-bacterial agents.