Patents by Inventor Shigeo Ootani

Shigeo Ootani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Corrosion resistant structure for conductor and PSG layered semiconductor device
    Patent number: 4396934
    Abstract: A semiconductor device comprises an oxide film and a polysilicon electrode formed in succession on a semiconductor substrate, and a phosphor silicate glass layer formed on the polysilicon electrode and the oxide film and having the smoothed surface. An aluminum electrode is formed on the phosphor silicate glass. A nitride film is formed on the aluminum electrode and the phosphor silicate glass layer, for example, by a chemical vapor deposition process, so as to completely cover the phosphor silicate glass layer.
    Type: Grant
    Filed: January 29, 1981
    Date of Patent: August 2, 1983
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masanori Nishida, Shigeo Ootani