Abstract: A two-wavelength semiconductor laser 1 includes an n-type GaN substrate 101, an n-type GaAs substrate 201 disposed on a predetermined face of the n-type GaN substrate 101, a blue-violet laser 100 provided on one of faces of the n-type GaN substrate 101 and including a multi-quantum well active layer 105, and a red laser 200 provided on one of faces of the n-type GaAs substrate 201 and including a multi-quantum well active layer 205. The blue-violet laser 100 and the red laser 200 emit laser beams having wavelengths different from each other. The blue-violet laser 100 and the red laser 200 are disposed so that their cavity length directions are almost parallel with each other. The cavity length of the blue-violet laser 100 is shorter than that of the red laser 200.

Abstract: The invention provides a method of fabricating two dimensional semiconductor surface emitting laser and photo detector arrays for wavelength division multiplexing optical interconnections. A first stacked multiple layer structure on a first semiconductor substrate. An intermediate layer is grown on the first stacked multiple layer structure. A second stacked multiple layer structure is grown on the intermediate layer. A second semiconductor substrate is adhered on a top of the second stacked multiple layer structure by a heat treatment thereby a wafer is grown in successive growth processes to receive a selective wet etching so that the intermediate layer only is selectively etched to separate the first and second stacked multiple layer structures from one another, followed by forming surface emitting laser arrays and photo detector arrays on the first and second semiconductor substrates respectively.

Abstract: An improved buried heterostructure semiconductor laser comprises high resistive burying layers positioned at both sides of an active region so that the high speed modulation is possible to be performed and the higher quantum efficiency is obtained for the reason why the capacitance and leakage current are diminished. A further improved buried heterostructure semiconductor laser comprises spacer layers between an active region and respective high resistive burying layers so that the reliability is maintained to be high for the reason why the diffusion of an impurity is avoided from the respective high resistive burying layers to the active region.

Abstract: An improved semiconductor laser comprises the first and second cladding portions respectively formed on a semi-insulating substrate, an active region sandwiched between the first and second cladding portions, and the first and second electrodes respectively provided on the first and second cladding portions. The first cladding portion includes a semiconductor layer and semi-insulating semiconductor layers provided on the top and back sides of the semiconductor layer so that carries are injected into an active region which is in contact with the side wall of the semiconductor layer, while current leakage is prevented from being produced because the carrier are not injected into other portion than the active region.