Abstract: This solar cell is provided with: a substrate, which is a crystalline silicon layer; an intrinsic i-type semiconductor layer, which is directly provided on the light receiving surface side of the substrate; a wide gap layer, which is provided on the i-type semiconductor layer, and which has a p-type or an n-type impurity added thereto; and a transparent conductive layer, which is provided on the wide gap layer. The refractive index of the i-type semiconductor layer has a value between the refractive index of the substrate and that of the transparent conductive layer, and the refractive index of the wide gap layer has a value larger than the refractive index of the transparent conductive layer.

Abstract: Disclosed is a photoelectric conversion device with improved photoelectric conversion efficiency. In the disclosed photoelectric conversion device, an amorphous silicon photoelectric conversion unit with an amorphous i-type layer and a microcrystalline silicon photoelectric conversion unit with a microcrystalline i-type layer are laminated, and an intermediate layer, which is disposed between the amorphous silicon photoelectric conversion unit and the microcrystalline silicon photoelectric conversion unit, has a lower refractive index than the layers in contact with the front or back surfaces thereof, wherein the higher the crystalline fraction of the microcrystalline i-type layer in the panel surface, the thicker the film of the intermediate layer.

Abstract: In order to increase the photoelectric conversion efficiency of a photoelectric conversion device, a photoelectric conversion device (400), obtained by layering semiconductor layers consisting of a p-type layer (42), an i-type layer (46) and an n-type layer (50), is provided with a first intermediate layer (44) and a second intermediate layer (48), which abut the i-type layer (46) and have refractive indices that increase from the side that abuts the i-type layer (46) to the side that does not abut the i-type layer (46) within a range of refractive indices lower than that of the i-type layer.

Abstract: In order to increase the photoelectric conversion efficiency of a photoelectric conversion device, the photoelectric conversion device (200) is provided with a first intermediate layer (44), which is arranged between a p-type layer (42) and an i-type layer (46) and which has a lower refractive index than refractive indices of the p-type layer (42) or the i-type layer (46), and a second intermediate layer (48), which is arranged between an n-type layer (50) and the i-type layer (46) and which has a lower refractive index than refractive indices of the n-type layer (50) or the i-type layer (46).

Abstract: Disclosed is a photoelectric conversion device with improved photoelectric conversion efficiency. In the disclosed photoelectric conversion device, an amorphous silicon photoelectric conversion unit with an amorphous i-type layer and a microcrystalline silicon photoelectric conversion unit with a microcrystalline i-type layer are laminated, and an intermediate layer, which is disposed between the amorphous silicon photoelectric conversion unit and the microcrystalline silicon photoelectric conversion unit, has a lower refractive index than the layers in contact with the front or back surfaces thereof, wherein the higher the crystalline fraction of the microcrystalline i-type layer in the panel surface, the thicker the film of the intermediate layer.

Abstract: Disclosed is a solar cell with the ability to extract more photogenerated carriers while improving power generation efficiency. The solar cell (10) includes a light-receiving surface electrode layer (2), a first photoelectric conversion section (31) laminated on the light-receiving surface electrode layer (2), a reflective layer (32) laminated on the first photoelectric conversion section (31) and having an SiO layer (32b) and silicon layers (32a, 32c), a second photoelectric conversion (33) laminated on the reflective layer (32), and a rear-side electrode layer (4) laminated on the second photoelectric conversion section (33).

Abstract: Disclosed is a solar cell which allows more photogenerated carriers to be extracted while improving power generation efficiency. The solar cell has a light-receiving surface electrode layer (2), a first photoelectric conversion unit (31) layered over the light-receiving surface electrode layer (2), a reflective layer (32) comprising SiO and layered over the first photoelectric conversion unit (31), a second photoelectric conversion unit (33) layered over the reflective layer (32), and a backside electrode layer (4) layered over the second photoelectric conversion unit (33). An oxygen concentration of the reflective layer (32) is higher on a side of the second photoelectric conversion unit (33) than on a side of the first photoelectric conversion unit (31).

Abstract: Disclosed is a photoelectric conversion device provided with transparent electrodes having high electric conductivity, low optical absorptance, and capable of obtaining a high light scattering effect. A first transparent electrode layer (22a), formed on the substrate (20) side, and a second transparent electrode layer (22b), formed at a position farther away from the substrate (20) than the first transparent electrode layer (22a) and having a density less than that of the first transparent electrode layer (22a), are formed as a transparent electrode layer (22), and a textured structure is provided.

Abstract: A solar cell 10 comprising a light-receiving-surface electrode layer, a backside electrode layer 4 and a stacked body 3 provided between the light-receiving-surface electrode layer 2 and the backside electrode layer 4. The stacked body 3 includes a first photoelectric converter 31 and a reflective layer 32 reflecting a part of light, which has transmitted through the first photoelectric converter 31, toward the first photoelectric converter 31. The reflective layer 32 includes a low-refractive-index layer 32b containing a refractive index-modifier and a contact layer 32 interposed between the low-refractive-index layer 32b and the first photoelectric converter 31. A refractive index of a material constituting the refractive index-modifier is lower than a refractive index of a material constituting the contact layer 32a. A refractive index of the low-refractive-index layer 32b is lower than a refractive index of the contact layer 32a.

Abstract: A photovoltaic device has a first photovoltaic cell unit and a second photovoltaic cell unit stacked on either side of a conductive intermediate layer, between a first electrode and a second electrode, the first electrode and second electrode being electrically connected by a channel formed through the first photovoltaic cell unit, the second photovoltaic cell unit, and the intermediate layer as far as the surface of the first electrode, and a PN junction being formed at an end section of the intermediate layer that contacts the second electrode by adding dopant.

Abstract: A solar battery module is provided comprising a light-transmissive substrate, a solar battery formed over a first surface of the light-transmissive substrate, and a first reflective section which is made of the same material as an electrode forming a part of the solar battery, which is provided over a second surface of the light-transmissive substrate, and which reflects light from the side of the substrate.

Abstract: A method of manufacturing a solar battery for forming a thin film solar battery is provided in which, when a layered structure of a transparent electrode layer and a metal layer is formed as a back side electrode layer over a surface on a side opposite to a side of incident light of the thin film solar battery, a period is provided in which the transparent electrode layer and the metal layer are simultaneously formed for one substrate.

Abstract: A solar cell comprises a light-receiving side electrode layer 2 a rear side electrode layer 4 and a stacked body 3 placed between the light-receiving side electrode layer 2 and the rear side electrode layer 4, wherein the stacked body 3 includes a first photoelectric conversion section 31, and a reflection layer 32 configured to reflect part of light, which is transmitted through the first photoelectric conversion section 31, to the first photoelectric conversion section 31 side, and the reflection layer 32 includes a MgZnO layer 32b made of MgZnO and a contact layer 32a inserted between the MgZnO layer 32b and the first photoelectric conversion section31.

Abstract: A first solar battery unit and a second solar battery unit are stacked between a front-side electrode and a backside electrode and sandwiching an intermediate layer having conductivity, and a Schottky barrier is formed between the intermediate layer and an electrode connecting layer which connects the front-side electrode and the backside electrode.

Abstract: Provided are a solar cell module and a solar cell module manufacturing method, the solar cell module being capable of maintaining a higher power generation capacity even if water infiltrates. In a solar cell module 10, in a first groove section 30, a second transparent conductive film 14a is in contact with a first transparent conductive film 12 while covering a side wall of a photoelectric conversion layer 13. A metal film 14b is in contact with the first transparent conductive film 12 while covering a side wall of the second transparent conductive film 14a. In the first groove section 30, the metal film 14b is in contact with the photoelectric conversion layer 13 while covering a side wall of the second transparent conductive film 14a formed on the photoelectric conversion layer 13.

Abstract: The transparent conductive film 4 provided to the solar cell 10 includes the oxide of the first element ?, the second element ? doped into the oxide of the first element ?, and the third element ? doped into the oxide of the first element ?. The bond distance between the second element ? and oxygen O is shorter than the bond distance between the first element ? and oxygen O. The bond distance between the third element ? and oxygen O is longer than the bond distance between the first element ? and oxygen O.

Abstract: In the solar cell element 2, the second semiconductor layer 24 includes the first extension part 241 which is extended toward and in contact with the first semiconductor layer 22. The extension part 241 is provided along the element separation groove 6 and the power generation region separation groove 7.

Abstract: A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end or toward both ends in the thickness direction of the film. More preferably, the alkali metal is contained in the concentration range of 1×1018-5×1021 cm?3 and the nitrogen in the concentration range of 2×1017-5×1020 cm?3.

Abstract: A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end or toward both ends in the thickness direction of the film. More preferably, the alkali metal is contained in the concentration range of 1×1018-5×1021 cm?3 and the nitrogen in the concentration range of 2×1017-5×1020 cm?3.

Abstract: Disclosed is a photovoltaic device comprising on a substrate (1) a plurality of photovoltaic elements (10) each composed of a lamination body of a first electrode (2), a photovoltaic conversion layer (3), and a second electrode (4), the thickness of a side end (B) in the first electrode (2) in the vicinity of a separating trench (S) existing between the first electrode (2) and the adjacent first electrode (2) being larger than the thickness of an element region (A) in the first electrode (2).