Abstract: An object of the present invention relates to an arrangement of a manufactured probe in a prober apparatus without being exposed to an atmospheric air. The present invention relates to a probe storage container which can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source or the like, without being exposed to the atmospheric air. In accordance with the present invention, it is possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, and it is possible to avoid a formation of the oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken.

Abstract: A probe storage container can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source, for example, without being exposed to the atmospheric air. It is thus possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, avoiding formation of an oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken. Accordingly, it is possible to stably measure an electric characteristic of a semiconductor device or the like on the wafer.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: An object of the present invention relates to an arrangement of a manufactured probe in a prober apparatus without being exposed to an atmospheric air. The present invention relates to a probe storage container which can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source or the like, without being exposed to the atmospheric air. In accordance with the present invention, it is possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, and it is possible to avoid a formation of the oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Abstract: A novel fused bicyclic pyrimidine derivative or a salt thereof that acts as a tachykinin receptor antagonist and, in particular, as an NK1 receptor antagonist is represented by the following general formula (1): wherein the rings A and B are each a benzene ring having 1 to 3 substituents (any adjacent two of which may be bound to one another to form a ring); the ring C is a nitrogen-containing ring; R is a hydrogen atom, a C1 to C6 alkyl group, a C1 to C6 alkylcarbonyl group, or a C1 to C6 alkylsulfonyl group; m is 1 or 2; and n is 2 or 3.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: A novel fused bicyclic pyridine derivative or a salt thereof that acts as a tachykinin receptor antagonist, in particular as an NK1 receptor antagonist, is represented by the following general formula (1): wherein the rings A and B are each a benzene ring which may have 1 to 3 substituents (any adjacent two of which may be bound to one another to form a ring); the ring C is a nitrogen-containing ring having a hydrogen atom substituted with a nitrogen atom; R1 and R2 are each independently a hydrogen atom, a C1 to C6 alkyl group, a C1 to C6 alkylsulfonyl group, a C1 to C6 alkylcarbonyl group, or a C1 to C6 alkoxycarbonyl group, or R1 and R2 are bound to one another to form the ring D; m is 1 or 2; n is 2 or 3; and q is an integer from 1 to 4.

Abstract: A fused bicyclic pyridine derivative represented by the following general formula (1), or a salt thereof: wherein the rings A and B are each a benzene ring, which may have 1 to 3 substituents (any adjacent two of which may be bound to one another to form a ring) that are each independently selected from the group consisting of a halogen atom, a substituted or unsubstituted C1 to C6 alkyl group, and a substituted or unsubstituted C1 to C6 alkoxyl group; R is a C1 to C6 alkylsulfonyl group, a C1 to C6 alkylcarbonyl group, a C1 to C6 alkoxycarbonyl group, or a formyl group; m is 1 or 2; n is 2 or 3; and q is 1 or 2.

Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract: A novel fused bicyclic pyrimidine derivative or a salt thereof that acts as a tachykinin receptor antagonist and, in particular, as an NK1 receptor antagonist is represented by the following general formula (1): wherein the rings A and B are each a benzene ring having 1 to 3 substituents (any adjacent two of which may be bound to one another to form a ring); the ring C is a nitrogen-containing ring; m is 1 or 2; and n is 2 or 3.

Abstract: A novel fused bicyclic pyrimidine derivative or a salt thereof that acts as a tachykinin receptor antagonist and, in particular, as an NK1 receptor antagonist is represented by the following general formula (1): wherein the rings A and B are each a benzene ring having 1 to 3 substituents (any adjacent two of which may be bound to one another to form a ring); the ring C is a nitrogen-containing ring; R is a hydrogen atom, a C1 to C6 alkyl group, a C1 to C6 alkylcarbonyl group, or a C1 to C6 alkylsulfonyl group; m is 1 or 2; and n is 2 or 3.

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.