Patents by Inventor Shigeru Maida
Shigeru Maida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10114280Abstract: On an EUV light-reflecting surface of titania-doped quartz glass, an angle (?) included between a straight line connecting an origin (O) at the center of the reflecting surface to a birefringence measurement point (A) and a fast axis of birefringence at the measurement point (A) has an average value of more than 45 degrees. Since fast axes of birefringence are distributed in a concentric fashion, a titania-doped quartz glass substrate having a high flatness is obtainable which is suited for use in the EUV lithography.Type: GrantFiled: February 11, 2016Date of Patent: October 30, 2018Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka, Tetsuji Ueda, Masanobu Ezaki
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Patent number: 9746773Abstract: Methods for selecting titania-doped quartz glass which experiences a reduction in OH group concentration of less than or equal to 100 ppm upon heat treatment at 900° C. for 100 hours as suitable material for the EUV lithography member.Type: GrantFiled: June 18, 2013Date of Patent: August 29, 2017Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shigeru Maida, Hisatoshi Otsuka, Tetsuji Ueda, Masanobu Ezaki
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Patent number: 9612525Abstract: Titania-doped quartz glass is manufactured by mixing a silicon-providing reactant gas and a titanium-providing reactant gas, preheating the reactant gas mixture at 200-400° C., and subjecting the mixture to oxidation or flame hydrolysis. A substrate of the glass is free of concave defects having a volume of at least 30,000 nm3 in an effective region of the EUV light-reflecting surface and is suited for use in the EUV lithography.Type: GrantFiled: April 25, 2016Date of Patent: April 4, 2017Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Publication number: 20170038672Abstract: On an EUV light-reflecting surface of titania-doped quartz glass, an angle (?) included between a straight line connecting an origin (O) at the center of the reflecting surface to a birefringence measurement point (A) and a fast axis of birefringence at the measurement point (A) has an average value of more than 45 degrees. Since fast axes of birefringence are distributed in a concentric fashion, a titania-doped quartz glass substrate having a high flatness is obtainable which is suited for use in the EUV lithography.Type: ApplicationFiled: February 11, 2016Publication date: February 9, 2017Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka, Tetsuji Ueda, Masanobu Ezaki
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Publication number: 20160306271Abstract: Titania-doped quartz glass is manufactured by mixing a silicon-providing reactant gas and a titanium-providing reactant gas, preheating the reactant gas mixture at 200-400° C., and subjecting the mixture to oxidation or flame hydrolysis. A substrate of the glass is free of concave defects having a volume of at least 30,000 nm3 in an effective region of the EUV light-reflecting surface and is suited for use in the EUV lithography.Type: ApplicationFiled: April 25, 2016Publication date: October 20, 2016Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Patent number: 9346700Abstract: Titania-doped quartz glass is manufactured by mixing a silicon-providing reactant gas and a titanium-providing reactant gas, preheating the reactant gas mixture at 200-400° C., and subjecting the mixture to oxidation or flame hydrolysis. A substrate of the glass is free of concave defects having a volume of at least 30,000 nm3 in an effective region of the EUV light-reflecting surface and is suited for use in the EUV lithography.Type: GrantFiled: August 8, 2012Date of Patent: May 24, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Patent number: 9296636Abstract: On an EUV light-reflecting surface of titania-doped quartz glass, an angle (?) included between a straight line connecting an origin (O) at the center of the reflecting surface to a birefringence measurement point (A) and a fast axis of birefringence at the measurement point (A) has an average value of more than 45 degrees. Since fast axes of birefringence are distributed in a concentric fashion, a titania-doped quartz glass substrate having a high flatness is obtainable which is suited for use in the EUV lithography.Type: GrantFiled: April 9, 2012Date of Patent: March 29, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka, Tetsuji Ueda, Masanobu Ezaki
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Patent number: 9278881Abstract: A member is made of titania-doped quartz glass in which striae have a curvature radius of at least 150 mm in a surface perpendicular to an EUV-reflecting surface. The member free of exposed striae and having a high flatness is useful in EUV lithography.Type: GrantFiled: January 2, 2014Date of Patent: March 8, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka, Tetsuji Ueda, Masanobu Ezaki
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Patent number: 9067814Abstract: Disclosed is a method of producing a synthetic quartz glass for excimer laser by depositing on a target silica particulates obtained by subjecting a silica raw material to vapor-phase hydrolysis or oxidative decomposition in an oxyhydrogen flame in a vacuum sintering furnace to form a porous silica base material, vitrifying the porous silica base material, and subjecting the vitrified material to hot forming, an annealing treatment and a hydrogen doping treatment, wherein the vitrification of the porous silica base material includes: (a) a step of holding a vacuum pressure at or below 20.0 Pa in a temperature range from 400° C., inclusive, to 900° C., exclusive; (b) a step of holding a vacuum pressure at or below 10.0 Pa in a temperature range from 900° C., inclusive, to 1100° C., exclusive; and (c) a step of holding a vacuum pressure at or below 3.0 Pa in a temperature range from 1100° C. to a transparent-vitrification temperature.Type: GrantFiled: January 15, 2010Date of Patent: June 30, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Patent number: 9056785Abstract: Synthetic quartz glass is prepared by subjecting a silicon-providing feedstock to flame hydrolysis in oxyhydrogen flame, depositing silica fine particles on a rotating quartz glass target while concurrently melting and vitrifying them, thereby forming a synthetic quartz glass ingot, shaping, annealing, and effecting dehydrogenation treatment at a temperature of at least 600° C. and a pressure of up to 5 Pa for a holding time of at least 12 hours. The synthetic quartz glass has a high helium gas permeability and is suited for forming nanoimprint molds.Type: GrantFiled: July 1, 2013Date of Patent: June 16, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Patent number: 8820122Abstract: A titania-doped quartz glass suited as an EUV lithographic member is prepared by feeding a silicon-providing reactant gas and a titanium-providing reactant gas through a burner along with hydrogen and oxygen, subjecting the reactant gases to oxidation or flame hydrolysis to form synthetic silica-titania fine particles, depositing the particles on a rotating target, and concurrently melting and vitrifying the deposited particles to grow an ingot of titania-doped quartz glass. The target is retracted such that the growth front of the ingot may be spaced a distance of at least 250 mm from the burner tip.Type: GrantFiled: September 1, 2011Date of Patent: September 2, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shigeru Maida, Hisatoshi Otsuka, Osamu Sekizawa, Naoki Yanagisawa
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Publication number: 20140206524Abstract: A member is made of titania-doped quartz glass in which striae have a curvature radius of at least 150 mm in a surface perpendicular to an EUV-reflecting surface. The member free of exposed striae and having a high flatness is useful in EUV lithography.Type: ApplicationFiled: January 2, 2014Publication date: July 24, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka, Tetsuji Ueda, Masanobu Ezaki
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Publication number: 20140018229Abstract: Synthetic quartz glass is prepared by subjecting a silicon-providing feedstock to flame hydrolysis in oxyhydrogen flame, depositing silica fine particles on a rotating quartz glass target while concurrently melting and vitrifying them, thereby forming a synthetic quartz glass ingot, shaping, annealing, and effecting dehydrogenation treatment at a temperature of at least 600° C. and a pressure of up to 5 Pa for a holding time of at least 12 hours. The synthetic quartz glass has a high helium gas permeability and is suited for forming nanoimprint molds.Type: ApplicationFiled: July 1, 2013Publication date: January 16, 2014Inventors: Shigeru Maida, Hisatoshi Otsuka
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Patent number: 8629071Abstract: A titania and sulfur co-doped quartz glass member is provided. Due to co-doping of titania and sulfur, the quartz glass member undergoes zero expansion at a certain temperature and low thermal expansion over a wide temperature range, and is thus suited for use in a commercial EUV lithography tool. A manufacturing method and an optical member for EUV lithography are also provided.Type: GrantFiled: February 7, 2013Date of Patent: January 14, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Publication number: 20130283858Abstract: Methods for selecting titania-doped quartz glass which experiences a reduction in OH group concentration of less than or equal to 100 ppm upon heat treatment at 900° C. for 100 hours as suitable material for the EUV lithography member.Type: ApplicationFiled: June 18, 2013Publication date: October 31, 2013Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka, Tetsuji Ueda, Masanobu Ezaki
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Patent number: 8539797Abstract: A titania and sulfur co-doped quartz glass member is provided. Due to co-doping of titania and sulfur, the quartz glass member undergoes zero expansion at a certain temperature and low thermal expansion over a wide temperature range, and is thus suited for use in a commercial EUV lithography tool. A manufacturing method and an optical member for EUV lithography are also provided.Type: GrantFiled: November 5, 2010Date of Patent: September 24, 2013Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Publication number: 20130045439Abstract: Titania-doped quartz glass is manufactured by mixing a silicon-providing reactant gas and a titanium-providing reactant gas, preheating the reactant gas mixture at 200-400° C., and subjecting the mixture to oxidation or flame hydrolysis. A substrate of the glass is free of concave defects having a volume of at least 30,000 nm3 in an effective region of the EUV light-reflecting surface and is suited for use in the EUV lithography.Type: ApplicationFiled: August 8, 2012Publication date: February 21, 2013Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Patent number: 8377612Abstract: In a titania-doped quartz glass member having a surface where EUV light of up to 70 nm wavelength is reflected, a refractive index distribution in the surface has only one extreme point within a central 80% region of the member. The titania-doped quartz glass member has a surface with a high level of precision and thus can be formed into an EUV lithography photomask substrate which is improved in flatness and thermal expansion properties.Type: GrantFiled: January 9, 2012Date of Patent: February 19, 2013Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shigeru Maida, Hisatoshi Otsuka
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Publication number: 20120258389Abstract: On an EUV light-reflecting surface of titania-doped quartz glass, an angle (?) included between a straight line connecting an origin (O) at the center of the reflecting surface to a birefringence measurement point (A) and a fast axis of birefringence at the measurement point (A) has an average value of more than 45 degrees. Since fast axes of birefringence are distributed in a concentric fashion, a titania-doped quartz glass substrate having a high flatness is obtainable which is suited for use in the EUV lithography.Type: ApplicationFiled: April 9, 2012Publication date: October 11, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Shigeru Maida, Hisatoshi Otsuka, Tetsuji Ueda, Masanobu Ezaki
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Publication number: 20120104336Abstract: In a titania-doped quartz glass member having a surface where EUV light of up to 70 nm wavelength is reflected, a refractive index distribution in the surface has only one extreme point within a central 80% region of the member. The titania-doped quartz glass member has a surface with a high level of precision and thus can be formed into an EUV lithography photomask substrate which is improved in flatness and thermal expansion properties.Type: ApplicationFiled: January 9, 2012Publication date: May 3, 2012Inventors: Shigeru MAIDA, Hisatoshi Otsuka