Patents by Inventor Shigeru Nishimatsi

Shigeru Nishimatsi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4844767
    Abstract: A plasma which is formed by the contact between a microwave and a reaction gas is brought into contact with an article to be etched which is AC-biased, thereby effecting etching of an exposed region of the article. The etching is carried out in a state wherein the self-bias formed between the plasma and the article is minimized, whereby it is possible to effect etching which provides high selectivity and which enables a substantially vertical side wall to be formed.
    Type: Grant
    Filed: February 16, 1988
    Date of Patent: July 4, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Sadayuki Okudaira, Shigeru Nishimatsi, Keizo Suzuki, Ken Ninomiya