Patents by Inventor Shigeru Nobe
Shigeru Nobe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10040971Abstract: Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.Type: GrantFiled: September 23, 2016Date of Patent: August 7, 2018Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Yousuke Hoshi, Daisuke Ryuzaki, Naoyuki Koyama, Shigeru Nobe
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Publication number: 20170267895Abstract: The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively.Type: ApplicationFiled: July 15, 2015Publication date: September 21, 2017Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Takashi Shinoda, Shigeru Nobe, Takafumi Sakurada, Yoshikazu Oomori, Tadahiro Kimura
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Patent number: 9633848Abstract: Disclosed is a photosensitive resin composition comprising (A) an alkali-soluble resin having a structural unit represented by the following formula (1), (B) a compound that generates an acid by light, (C) a thermal crosslinking agent, and (D) an acryl resin having a structural unit represented by the following formula (2): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkyl group having 1 to 10 carbon atoms, or the like; and a represents an integer of 0 to 3, b represents an integer of 1 to 3, and the total of a and b is 5 or less, and wherein R3 represents a hydrogen atom or a methyl group; and R4 represents a hydroxyalkyl group having 2 to 20 carbon atoms.Type: GrantFiled: October 9, 2013Date of Patent: April 25, 2017Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Yu Aoki, Shigeru Nobe, Hiroshi Matsutani, Kei Kasuya, Akitoshi Tanimoto, Shingo Tahara
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Publication number: 20170009102Abstract: Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.Type: ApplicationFiled: September 23, 2016Publication date: January 12, 2017Inventors: Yousuke HOSHI, Daisuke RYUZAKI, Naoyuki KOYAMA, Shigeru NOBE
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Patent number: 9395626Abstract: There is provided a photosensitive resin composition containing (A) an alkali-soluble resin, (B) a compound which generates an acid when exposed to light, (C) a thermal crosslinking agent, and (D) a nitrogen-containing aromatic compound represented by the following formula (1): wherein R1 represents a hydrogen atom or a hydrocarbon group; R2 represents a hydrogen atom, an amino group or a phenyl group; and A and B each independently represent a nitrogen atom, or a carbon atom and a hydrogen atom bonded thereto.Type: GrantFiled: October 31, 2012Date of Patent: July 19, 2016Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Akitoshi Tanimoto, Shigeru Nobe, Kei Kasuya, Hiroshi Matsutani, Shigeki Katogi, Yu Aoki, Shingo Tahara
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Publication number: 20150361303Abstract: Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.Type: ApplicationFiled: July 13, 2015Publication date: December 17, 2015Inventors: Yousuke HOSHI, Daisuke Ryuzaki, Naoyuki Koyama, Shigeru Nobe
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Publication number: 20150325431Abstract: Disclosed is a photosensitive resin composition comprising (A) an alkali-soluble resin having a structural unit represented by the following formula (1), (B) a compound that generates an acid by light, (C) a thermal crosslinking agent, and (D) an acryl resin having a structural unit represented by the following formula (2): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkyl group having 1 to 10 carbon atoms, or the like; and a represents an integer of 0 to 3, b represents an integer of 1 to 3, and the total of a and b is 5 or less, and wherein R3 represents a hydrogen atom or a methyl group; and R4 represents a hydroxyalkyl group having 2 to 20 carbon atoms.Type: ApplicationFiled: October 9, 2013Publication date: November 12, 2015Inventors: Yu AOKI, Shigeru NOBE, Hiroshi MATSUTANI, Kei KASUYA, Akitoshi TANIMOTO, Shingo TAHARA
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Publication number: 20150315419Abstract: The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively.Type: ApplicationFiled: July 15, 2015Publication date: November 5, 2015Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Takashi Shinoda, Shigeru Nobe, Takafumi Sakurada, Yoshikazu Oomori, Tadahiro Kimura
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Patent number: 9165777Abstract: Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.Type: GrantFiled: May 9, 2013Date of Patent: October 20, 2015Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Yousuke Hoshi, Daisuke Ryuzaki, Naoyuki Koyama, Shigeru Nobe
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Patent number: 9129900Abstract: Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.Type: GrantFiled: May 9, 2013Date of Patent: September 8, 2015Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Yousuke Hoshi, Daisuke Ryuzaki, Naoyuki Koyama, Shigeru Nobe
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Patent number: 9022834Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.Type: GrantFiled: June 10, 2011Date of Patent: May 5, 2015Assignee: Hitachi Chemical Company, Ltd.Inventors: Eiichi Satou, Munehiro Oota, Kanshi Chinone, Shigeru Nobe, Kazuhiro Enomoto, Tadahiro Kimura, Masato Fukasawa, Masanobu Habiro, Yousuke Hoshi
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Patent number: 8901002Abstract: Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.Type: GrantFiled: November 13, 2013Date of Patent: December 2, 2014Assignee: Hitachi Chemical Company, Ltd.Inventors: Takaaki Tanaka, Masato Fukasawa, Shigeru Nobe, Takafumi Sakurada, Takashi Shinoda
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Publication number: 20140322635Abstract: There is provided a photosensitive resin composition containing (A) an alkali-soluble resin, (B) a compound which generates an acid when exposed to light, (C) a thermal crosslinking agent, and (D) a nitrogen-containing aromatic compound represented by the following formula (1): wherein R1 represents a hydrogen atom or a hydrocarbon group; R2 represents a hydrogen atom, an amino group or a phenyl group; and A and B each independently represent a nitrogen atom, or a carbon atom and a hydrogen atom bonded thereto.Type: ApplicationFiled: October 31, 2012Publication date: October 30, 2014Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Akitoshi Tanimoto, Shigeru Nobe, Kei Kasuya, Hiroshi Matsutani, Shigeki Katogi, Yu Aoki, Shingo Tahara
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Patent number: 8836089Abstract: The positive-type photosensitive resin composition according to the present invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound that produces an acid by light, a thermal crosslinking agent, and a silane compound having at least one functional group selected from an epoxy group and a sulfide group.Type: GrantFiled: September 2, 2011Date of Patent: September 16, 2014Assignee: Hitachi Chemical Company, Ltd.Inventors: Akitoshi Tanimoto, Shigeru Nobe, Kei Kasuya, Hiroshi Matsutani, Takumi Ueno, Yu Aoki, Shingo Tahara
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Patent number: 8821750Abstract: The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.Type: GrantFiled: February 22, 2008Date of Patent: September 2, 2014Assignee: Hitachi Chemical Co., Ltd.Inventors: Jin Amanokura, Takafumi Sakurada, Sou Anzai, Takashi Shinoda, Shigeru Nobe
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Publication number: 20140065826Abstract: Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.Type: ApplicationFiled: November 13, 2013Publication date: March 6, 2014Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Takaaki Tanaka, Masato Fukasawa, Shigeru Nobe, Takafumi Sakurada, Takashi Shinoda
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Publication number: 20140065825Abstract: A method including preparing a polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.Type: ApplicationFiled: November 8, 2013Publication date: March 6, 2014Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Takashi Shinoda, Shigeru Nobe, Takafumi Sakurada, Yoshikazu Oomori, Tadahiro Kimura
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Patent number: 8617275Abstract: Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.Type: GrantFiled: April 22, 2009Date of Patent: December 31, 2013Assignee: Hitachi Chemical Company, Ltd.Inventors: Yousuke Hoshi, Daisuke Ryuzaki, Naoyuki Koyama, Shigeru Nobe
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Patent number: 8609541Abstract: Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.Type: GrantFiled: July 4, 2008Date of Patent: December 17, 2013Assignee: Hitachi Chemical Co., Ltd.Inventors: Takaaki Tanaka, Masato Fukasawa, Shigeru Nobe, Takafumi Sakurada, Takashi Shinoda
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Patent number: 8592317Abstract: The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.Type: GrantFiled: May 6, 2011Date of Patent: November 26, 2013Assignee: Hitachi Chemical Co., Ltd.Inventors: Eiichi Satou, Shigeru Nobe, Munehiro Oota, Masayuki Hanano, Shigeru Yoshikawa