Abstract: An ultrasonic inspection device is capable of preventing adhesion of foreign matter onto a structure that comes into contact with water. The ultrasonic inspection device includes: an array probe configured to probe an inspection object having an inspection surface with an ultrasonic wave; and a water supply and drainage unit configured to supply water to a space between the inspection surface and the array probe. The water supply and drainage unit is made of a conductive material. The water supply and drainage unit includes a water discharge port through which water is supplied to the space, and a static eliminator that comes into contact with the water passing through the water discharge port and has a conductivity higher than a conductivity of a cover member forming the water discharge port. The static eliminator of the water supply and drainage unit is connected to a ground wire via a connection portion.

Abstract: An ultrasound image apparatus irradiates a bonded wafer in which two or more wafers are bonded with an ultrasonic wave to generate an image of the bonded surface between the wafers. An ultrasonic probe irradiates the bonded wafer with the ultrasonic wave on a lower side of the bonded wafer. A liquid ejection unit moves together with the ultrasonic probe while continuously ejecting a liquid toward a bottom surface such that a liquid film in contact with the bottom surface is formed between the liquid ejection unit and the bottom surface of the bonded wafer. Also, a gas ejection device ejects gas for pushing down the liquid toward an outer peripheral end portion of the bonded wafer so that the liquid ejected from the liquid ejection unit does not infiltrate into the bonded surface from the outer peripheral end portion of the bonded wafer.

Abstract: An ultrasonic inspection device includes a scanning measurement device and a control device. The scanning measurement device includes a transmission probe of a line focus type that emits an ultrasonic beam and reception probes and that receive the ultrasonic beam. The transmission probe emits an ultrasonic beam by being applied with a voltage waveform of a periodic wave packet including a wave packet having a wavenumber of equal to or greater than 2. The transmission probe is driven at an excitation frequency higher than a resonance frequency of the transmission probe. A signal processing unit of the control device includes a filter unit that reduces at least a maximum intensity frequency component in a reception signal of the reception probes and detects a skirt component other than the maximum intensity frequency component in the fundamental waveband including the maximum intensity frequency component.

Abstract: Provided is an ultrasonic inspection apparatus that offers high capability to detect a defect part that allow detection of a minute defect of a small detectable size. The ultrasonic inspection apparatus includes a scanning/measuring device that carries out scanning and measurement on an inspection subject, using an ultrasonic beam, and a control device that controls driving of the scanning/measuring device. The scanning/measuring device includes a transmission probe that emits the ultrasonic beam, and a reception probe that receives the ultrasonic beam. The control device includes a signal processing unit. The signal processing unit includes a filter unit reducing at least a maximum intensity frequency component of a reception signal received by the reception probe. The filter unit detects a skirt component in a fundamental waveband including the maximum intensity frequency component, the skirt component being a part of the fundamental waveband that is other than the maximum intensity frequency component.

Abstract: An ultrasound image apparatus irradiates a bonded wafer in which two or more wafers are bonded with an ultrasonic wave to generate an image of the bonded surface between the wafers. An ultrasonic probe irradiates the bonded wafer with the ultrasonic wave on a lower side of the bonded wafer. A liquid ejection unit moves together with the ultrasonic probe while continuously ejecting a liquid toward a bottom surface such that a liquid film in contact with the bottom surface is formed between the liquid ejection unit and the bottom surface of the bonded wafer. Also, a gas ejection device ejects gas for pushing down the liquid toward an outer peripheral end portion of the bonded wafer so that the liquid ejected from the liquid ejection unit does not infiltrate into the bonded surface from the outer peripheral end portion of the bonded wafer.

Abstract: Disclosed is a plasma processing apparatus which performs plasma processing under substantially atmospheric pressure to a non-planar subject to be processed. In the plasma processing apparatus, a pair of conductive wires are disposed at an interval of 1 mm or less on a dielectric board that conforms with the shape of the subject, the conductive wires are covered with a dielectric thin film having a thickness of 1 mm or less by, for instance, thermally spraying a dielectric material over the conductive wires, and plasma is generated along the shape of subject by applying high-frequency power to the pair of conductive wires.

Abstract: A sidewall rubber disposed outside of a carcass layer, reinforcing a portion between beads, in a widthwise direction of the tire is configured from a wide rubber ribbon having a width of 20 to 100 mm wound spirally along a circumferential direction of the tire outward of the tire such that the rubber ribbon is deviated radially outward of the tire.

Abstract: An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology.

Abstract: An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology.

Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Abstract: A sidewall rubber disposed outside of a carcass layer, reinforcing a portion between beads, in a widthwise direction of the tire is configured from a wide rubber ribbon having a width of 20 to 100 mm wound spirally along a circumferential direction of the tire outward of the tire such that the rubber ribbon is deviated radially outward of the tire.

Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Abstract: The present invention provides an agent containing RGD-CAP for of suppressing mineralization of the periodontal ligament and preventing the adhesion of teeth. The present invention provides the method of suppressing mineralization in the periodontal ligament and preventing the adhesion of teeth.

Abstract: The present invention provides an agent containing RGD-CAP for of suppressing mineralization of the periodontal ligament and preventing the adhesion of teeth. The present invention provides the method of suppressing mineralization in the periodontal ligament and preventing the adhesion of teeth.

Abstract: A dished head and a wall part are integrally formed in one body by spinning, using a flat aluminum based material, and then a corrosion-proof protective coating is formed on the whole surface by the Irridite process to complete the canister. The combination of appropriate material selection and production process saves the processing time (man-hour) needed for forming resonator canisters and its surface treatment, improves the thermal conductivity, and consequently decreases individual differences of the radio frequency loss in resonator canisters.

Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Abstract: A dished head and a wall part are integrally formed in one body by spinning, using a flat aluminum based material, and then a corrosion-proof protective coating is formed on the whole surface by the Irridite process to complete the canister. The combination of appropriate material selection and production process saves the processing time (man-hour) needed for forming resonator canisters and its surface treatment, improves the thermal conductivity, and consequently decreases individual differences of the radio frequency loss in resonator canisters.

Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Abstract: With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.