Abstract: A power supply apparatus comprises a housing having a panel. A power supply circuit is disposed in the housing. The power supply circuit supplies power to a load. A control circuit controls the operation of the power supply circuit in accordance with control information. The control circuit is formed on a printed circuit board mounted on the panel in the housing. The printed circuit board is provided with a control which can be operated from outside the housing. The control provides the control information in response to operation thereof from outside the panel.

Abstract: A power supply apparatus for arc-utilizing equipment includes a first converter for converting a received AC voltage to a DC voltage.An inverter converts the DC voltage to a high-frequency voltage, which is applied to a voltage-transformer with primary and second windings. A voltage-transformed high-frequency voltage induced in the secondary winding is converted to a DC voltage in a second converter, which is developed between two output terminals. The respective ones of the two output terminals are connected to a torch electrode of the arc-utilizing equipment and a workpiece. A bypass capacitor and a high-frequency voltage generator circuit are serially connected between the two output terminals. A control circuit controls the high-frequency voltage generator circuit and the inverter circuit. The bypass capacitor is connected directly between one of the two output terminals and the high-frequency voltage generator circuit.

Abstract: An embedded electroconductive layer is disclosed which comprises an opening part or a depressed part 3 formed in an insulating film 2 on a substrate 1, a barrier layer for covering the opening part or the depressed part, a metal growth promoting layer 5 on the barrier layer, and an electroconductive layer 6 embedded in the opening part or the depressed part via the barrier layer 4 and the metal growth promoting layer 5.

Abstract: The impurity density of a photoelectric transducer n-layer (7) and the impurity density of a p-layer ( 6 ) of an impurity region in which the electric transducer (7) and a transfer channel (9) are formed, are each distributed to have its maximum value in a more interior part from the surface of a semiconductor substrate (5). Alternatively, i) a thin, high-density p-layer (34) and ii) a thick, low-density p-layer (33) of an impurity region in which the electric transducer (7) and the transfer channel (9 ) are formed may be formed. Each minimum potential in these two p-layers (33, 34) is made to have a different dependence on the voltage applied to an n-type semiconductor substrate ( 5). The thick, low-density p-layer ( 33 ) is formed in such a way that it comes into contact with part of the photoelectric transducer n-layer (7) at its bottom portion.

Abstract: The impurity density of a photoelectric transducer n-layer (7) and the impurity density of a p-layer (6) of an impurity region in which the electric transducer (7) and a transfer channel (9) are formed, are each distributed to have its maximum value in a more interior part from the surface of a semiconductor substrate (5). Alternatively, i) a thin, high-density p-layer (34) and ii) a thick, low-density p-layer (33) of an impurity region in which the electric transducer (7) and the transfer channel (9) are formed may be formed. Each minimum potential in these two p-layers (33, 34) is made to have a different dependence on the voltage applied to an n-type semiconductor substrate (5). The thick, low-density p-layer (33) is formed in such a way that it comes into contact with part of the photoelectric transducer n-layer (7) at its bottom portion.