Abstract: Conventional methods of crystallizing a semiconductor film through scanning with a pulse laser have had a problem in that variation in particle diameter or shape of a crystal grain causes variation in characteristics of a thin film transistor, which lowers display quality of a liquid crystal display. In view of this, in a method of crystallizing a semiconductor film according to the present invention, after a step of performing scanning with a first pulse laser, scanning with a second pulse laser, which has a higher energy density than that of the first pulse laser, is performed in a substantially orthogonal direction to a traveling direction of scanning with the first pulse laser. With this method, the semiconductor film can be crystallized uniformly.

Abstract: A magazine 12 for storing a plurality of packaged semiconductor integrated circuit devices 10, such as BGA packages, having connection terminals 1 located on a lower surface of the package, includes an elongated housing 9 having a pair of opposite end open mouths fitted with a rubber stopper or a bottle stopper. The housing includes a horizontal bottom plate 6, a pair of first side plates 4 extending from opposite edges of the horizontal bottom plate 6 in an inclined upward direction, a pair of second side plates 5 extending vertically upward from an upper edge of the pair of first side plates 4, respectively, and a horizontal upper plate 7 bridging an upper edge of the pair of second side plates 5. The pair of first side plates 4 have an inclined angle &agr; which is necessary and sufficient to ensure that the connection terminals 1 of the semiconductor device 10 never contact with the first side plate 4 and the bottom plate 6 when the semiconductor device 10 is stored in the housing 9.