Abstract: A substrate processing method includes: supplying a processing solution onto the upper surface of the substrate; executing, under atmospheric pressure, plasma processing on a liquid film of the processing solution that is formed at least in part of the upper surface of the substrate, with a thickness of the liquid film being a first thickness; and executing, under atmospheric pressure, plasma processing on the liquid film of the processing solution that is formed at least in part of the upper surface of the substrate, with the thickness of the liquid film being a second thickness, in which the first thickness is smaller than the second thickness. Thus, resists on the upper surface of the substrate can be efficiently removed.

Abstract: A substrate processing method includes: supplying a processing solution onto the upper surface of the substrate; executing, under atmospheric pressure, plasma processing on a liquid film of the processing solution that is formed at least in part of the upper surface of the substrate, with a thickness of the liquid film being a first thickness; and executing, under atmospheric pressure, plasma processing on the liquid film of the processing solution that is formed at least in part of the upper surface of the substrate, with the thickness of the liquid film being a second thickness, in which the first thickness is smaller than the second thickness. Thus, resists on the upper surface of the substrate can be efficiently removed.

Abstract: An in-liquid plasma generation device includes a housing which holds a liquid in an internal space, a gas supply tube which includes an opening in the internal space and discharges a gas into the liquid through the opening, a first electrode which has projecting part projecting into the internal space via the opening from inside of the gas supply tube, the projecting part including a conductor covered by a dielectric, a second electrode which surrounds the projecting part of the first electrode and includes a conductor isolated from the liquid by a dielectric, and a voltage applier which applies a voltage to between the first electrode and the second electrode. A space between the projecting part and the second electrode is a flow passage in which the gas discharged from the opening flows.

Abstract: The radical supply step of supplying the radicals (active species) to the resist film R is performed in the plasma processing (Step S102). Then, the resist removal step of supplying the organic solvent having the low surface tension to the resist film R present on the front surface Sa of the substrate S after the radical supply step to remove the resist film R from the front surface Sa of the substrate S is performed (Step S104).

Abstract: A liquid film of a processing liquid containing at least one of sulfuric acid, a sulfate, peroxosulfuric acid, and a peroxosulfate, or a processing liquid containing hydrogen peroxide is formed on a substrate. A plasma is radiated to the liquid film. Thereby, a substrate processing method in which substrate processing using an oxidizing power of the processing liquid can be efficiently performed is provided.

Abstract: An in-liquid plasma generation device includes a housing which holds a liquid in an internal space, a gas supply tube which includes an opening in the internal space and discharges a gas into the liquid through the opening, a first electrode which has projecting part projecting into the internal space via the opening from inside of the gas supply tube, the projecting part including a conductor covered by a dielectric, a second electrode which surrounds the projecting part of the first electrode and includes a conductor isolated from the liquid by a dielectric, and a voltage applier which applies a voltage to between the first electrode and the second electrode. A space between the projecting part and the second electrode is a flow passage in which the gas discharged from the opening flows.