Abstract: An X stage (21) arranged on the front edge of a table (11) is movable in the X-axis direction along a rail (23). The X stage (21) supports a light projecting device (70) for illuminating a printed circuit board (PCB) and an imaging device (80) for imaging an inspection area illuminated by the light projecting device (70). An image obtained by the imaging device (80) is displayed on a display device (13). A Y stage (41) is movably provided along a rail (33) on a base (10). A board supporting member (50) for supporting the board (PCB) is pivotably attached to the Y stage (41) at front portion thereof. An inspector judges whether or not soldering is acceptable while seeing the image displayed on the display device (13). When it is judged that soldering is unacceptable, the inspector can correct an unacceptable soldered portion by drawing out the Y stage (41) forward and obliquely raising the board supporting member (50).

Abstract: There is provided a blood cell identification and classification system including a photographing means for producing magnified images of cells in blood smears and generating video signals and an automatic analytical means for analyzing cells based on said video signals, characterized in that said system comprises: a video recording means for recording on a collective basis the magnified images of unknown cells which could not be analyzed by said automatic analytical means in conjunction with identification data for smears to which said unknown cells pertain, a video reproduction means for reproducing the magnified images of unknown cells and identification data so recorded, and an input means for entering analytical data derived from the magnified images of unknown cells so reproduced.

Abstract: A semiconductor composite having a rectifying characteristic is provided by first forming an insulating film of a semiconductor compound such as SiO.sub.2 on a semiconductor substrate of N-type Si to a uniform thickness of 27A to 500A, for example, and then further depositing thereon a tin oxide film. The intermediate insulating film between the SnO.sub.2 film and the semiconductor substrate decreases the reverse leakage current, raises the reverse breakdown voltage and makes uniform the reverse breakdown voltage. The semiconductor composite of the present invention, as subjected to a predetermined value of light energy, shows an excellent switching characteristic with respect to a voltage applied to the composite in a reverse direction. Also the semiconductor composite of the present invention, as supplied with a certain value of reverse bias voltage or with no bias, shows an excellent switching characteristic with respect to light energy applied to the composite.

Abstract: A semiconductor mechanical-electrical transducer is obtained by providing a mechanical force applying means on a semiconductor composite comprising a semiconductor substrate, an insulating film formed on said semiconductor substrate and a film of tin oxide deposited on said insulating film and having a barrier having a rectifying characteristic. Preferably, the material of said insulating film may be selected from a group consisting of SiO.sub.2, Si.sub.3 N.sub.4 and GeO.sub.2 and the thickness of the film may be chosen to be 15 to 80A, but preferably to be 20 to 60A and more preferably to be 20 to 40A. It was discovered that such composite shows an increased reverse current response to mechanical force applied to the composite in case where the thickness of the SiO.sub.2 film has been chosen to the said particular value range. Preferably, the main surface of the substrate is made uneven.

Abstract: A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film of electrically insulating material such as silicon dioxide of a substantial thickness on a main surface of a semiconductor substrate so as to have a plurality of portions of said main surface exposed through a corresponding plurality of square or rectangle openings laid out at right angles, said openings being defined by said insulating material film, depositing a tin oxide film on the open areas of the semiconductor substrate, removing a portion of said tin oxide film just overlying the said insulating film for separating the respective barrier regions formed between the tin oxide film and the substrate, and providing a metal layer on said insulating film for connecting the end portion of the tin oxide film of the adjacent barrier regions.

Abstract: A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film or silicon dioxide on a main surface, having a crystallographic orientation of (100), of a semiconductor substrate of N-type silicon, the film being formed to a thickness less than 25A., for example, and then further depositing thereon a tin oxide film. It was found that adoption of the abovementioned (100) orientation reduces the reverse saturation current and thus the dark current of the device, with the result that the open voltage of the device is accordingly increased. It was also found that proper choice of specific resistivity of the substrate improves linearity of the photoelectric characteristic.