Abstract: [Technical Problem] An object is to provide a lubricant capable of forming a stable adsorption film on a sliding surface and stabilizing the sliding characteristics (for example, ensuring the wear resistance, etc.). [Solution to Problem] The present invention provides a lubricant represented by the following chemical structural formula. (R: a hydrocarbon group whose carbon number is 8 to 24, m and n: integers of 2 to 8) [Selected Figure] FIG.

Abstract: A solid-state image sensing device has a plurality of detection units periodically arranged as a two-dimensional array on a substrate. Each of the detection units includes a visible light detector and an infrared light detector arranged on the same optical axis in a vertical direction so that the visible light detector and the infrared light detector overlap with each other. Each of the detection units also includes a signal readout circuit provided in the substrate so as to output signals of the visible light detector and the infrared light detector as time-series signals.

Abstract: In the reference element employed in the thermal-type infrared solid-state image sensing device according to the present invention, a slit used for construction of a light receiving element is opened in insulating films between which a thermoelectric conversion element is tucked to such an extent that the slit pierces into the sacrifice layer; a film made of electrically conductive material covering the light receiving section and the slit is provided and a protective film is provided thereon, and the film made of electrically conductive material and the protective film enter the interior of the slit along a side wall of the slit, whereby a void is left in the interior of the slit. As a result, residual stresses of the insulating films are kept equal in the light receiving element and the reference element, and thereby, the light blocking effect and the heat transfer effect are improved.

Abstract: A solid-state image sensing device has a plurality of detection units periodically arranged as a two-dimensional array on a substrate. Each of the detection units includes a visible light detector and an infrared light detector arranged on the same optical axis in a vertical direction so that the visible light detector and the infrared light detector overlap with each other. Each of the detection units also includes a signal readout circuit provided in the substrate so as to output signals of the visible light detector and the infrared light detector as time-series signals.

Abstract: In the reference element employed in the thermal-type infrared solid-state image sensing device according to the present invention, a slit used for construction of a light receiving element is opened in insulating films between which a thermoelectric conversion element is tucked to such an extent that the slit pierces into the sacrifice layer; a film made of electrically conductive material covering the light receiving section and the slit is provided and a protective film is provided thereon, and the film made of electrically conductive material and the protective film enter the interior of the slit along a side wall of the slit, whereby a void is left in the interior of the slit. As a result, residual stresses of the insulating films are kept equal in the light receiving element and the reference element, and thereby, the light blocking effect and the heat transfer effect are improved.

Abstract: A thermal-type infrared solid-state imaging device comprises a infrared detector having at least a substrate provided with an integrated circuit for reading out a signal, a diaphragm for detecting a temperature change by absorbing infrared rays, and a support section for supporting the diaphragm above a surface of one side of the substrate with space in between, and includes an eaves section connected to a connection area provided in the vicinity of outer circumference of the diaphragm and covering at least components other than the diaphragm across a space and transmitting the heat generated by absorbing incident infrared rays to the diaphragm, wherein the eaves section has the thickness of a first region covering the components other than the diaphragm across a space thicker than the thicknesses of a second region contacting the connection area of the diaphragm and a third region rising upward in mid air from the diaphragm.

Abstract: A thermal-type infrared solid-state imaging element is provided with a pixel having a diaphragm (1), a substrate, and a pair of supporting sections which support the diaphragm (1) by being spaced apart from the substrate. The supporting section has a first supporting section (2) on the same level as the diaphragm (1), and a second supporting section (3) on a level between the diaphragm (1) and the substrate. The second supporting section (3) is composed of a beam (4) having one or more bending points (8), a first contact section (5) on one end portion of the beam (4), and a second contact section (6) on the other end portion of the beam (4). The beam (4) and the second contact section (6) of the second supporting section (3) of each pixel exist underneath the diaphragm (1) of another pixel.

Abstract: The thermal-type infrared solid-state imaging device comprises a infrared detector having at least a substrate provided with an integrated circuit for reading out a signal, a diaphragm for detecting a temperature change by absorbing infrared rays, and a support section for supporting the diaphragm above a surface of one side of the substrate with space in between, and includes an eaves section connected to a connection area provided in the vicinity of outer circumference of the diaphragm and covering at least components other than the diaphragm across a space and transmitting the heat generated by absorbing incident infrared rays to the diaphragm, wherein the eaves section has the thickness of a first region covering the components other than the diaphragm across a space thicker than the thicknesses of a second region contacting the connection area of the diaphragm and a third region rising upward in mid air from the diaphragm.

Abstract: An infrared detecting apparatus includes: a substrate; an infrared detector which detects infrared radiation; a first supporting member which extends between the infrared detector and the substrate, and which supports the infrared detector apart from the substrate; a second supporting member which extends between the infrared detector and the substrate, and which supports the infrared detector apart from the substrate; and a plurality of wirings which extend between the infrared detector and the substrate, and which are all provided to the first supporting member.

Abstract: A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-readout circuit, a contact electrode formed on the substrate and electrically connected to the signal-readout circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.

Abstract: An infrared detecting apparatus includes: a substrate; an infrared detector which detects infrared radiation; a first supporting member which extends between the infrared detector and the substrate, and which supports the infrared detector apart from the substrate; a second supporting member which extends between the infrared detector and the substrate, and which supports the infrared detector apart from the substrate; and a plurality of wirings which extend between the infrared detector and the substrate, and which are all provided to the first supporting member.

Abstract: A bolometer-type infrared solid-state image sensor has a plurality of infrared detecting elements provided above the substrate, which has diaphragm spacing from the substrate and supported by beams. The diaphragm has a bolometer thin film, electrodes arranged on the both end of the bolometer thin film, an upper layer protective film and a lower layer protective film, which are formed so as to sandwich and cover said bolometer thin film and the electrodes, and concave or convex sections formed on said lower layer protective film. The bolometer thin film is formed on the sides of the concave or convex sections. The beams includes wiring material and insulating protective films surrounding the wiring material.

Abstract: A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-readout circuit, a contact electrode formed on the substrate and electrically connected to the signal-readout circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.

Abstract: A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-reading circuit, a contact electrode formed on the substrate and electrically connected to the signal-reading circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.

Abstract: A bolometer-type infrared solid-state image sensor has a plurality of infrared detecting elements provided above the substrate, which has diaphragm spacing from the substrate and supported by beams. The diaphragm has a bolometer thin film, electrodes arranged on the both end of the bolometer thin film, an upper layer protective film and a lower layer protective film, which are formed so as to sandwich and cover said bolometer thin film and the electrodes, and concave or convex sections formed on said lower layer protective film. The bolometer thin film is formed on the sides of the concave or convex sections. The beams includes wiring material and insulating protective films surrounding the wiring material.

Abstract: A charge coupled device has an n-type charge accumulating layer equal to or less than 5 micron in width, and the unit cells suffer from reduction of signal charge accumulated therein and an increased pulse height of a pulse signal for a substrate shutter, wherein at least one p-type local impurity region is formed in such a manner as to form a p-n junction together with the n-type charge accumulating layer and the n-type semiconductor substrate, thereby increasing the amount of signal charge accumulated in each unit cell without sacrifice of the pulse height of the pulse signal for the substrate shutter.

Abstract: A charge coupled device has an n- type charge accumulating layer equal to or less than 5 micron in width, and the unit cells suffer from reduction of signal charge accumulated therein and an increased pulse height of a pulse signal for a substrate shutter, wherein at least one p- type local impurity region is formed in such a manner as to form a p-n junction together with the n- type charge accumulating layer and the n- type semiconductor substrate, thereby increasing the amount of signal charge accumulated in each unit cell without sacrifice of the pulse height of the pulse signal for the substrate shutter.

Abstract: There is provided a solid-state image sensor including a photodetector array in which a plurality of photodetectors are one- or two-dimensionally arranged, each one of the photodetctors including an electrode in a photoelectric conversion region, and transmitting signals when detecting a light passing through the electrode, the solid-state image sensor converting the signals into time sequence electric signals, the electrode being composed of titanium dioxide (TiO.sub.2). The titanium dioxide preferably contains oxygen vacancies or at least one of tungsten (W), phosphorus (P), antimony (Sb), tantalum (Ta), niobium (Nb), indium (In) and oxides thereof (WO.sub.3, P.sub.2 O.sub.5, Sb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Nb.sub.2 O.sub.5, In.sub.2 O.sub.3). The above-mentioned solid-state image sensor provides a high quantum efficiency which would be obtained when transparent, electrically conductive material such as ITO (In.sub.2 O.sub.3 --SnO.sub.2) and tin oxide (SnO.sub.2) is used.

Abstract: Disclosed is a backside-illuminated charge-coupled device imager, which has: a silicon substrate which includes a light-receiving region which is formed on the frontside of the silicon substrate and includes charge-coupled devices which are arranged one-dimensionally or two-dimensionally and has a thickness equal to or less than a pixel pitch, wherein light is supplied from the backside of the silicon substrate; wherein the light-receiving region of the silicon substrate is provided with a silicon layer with a thickness equal to or less than the pixel pitch and a silicon dioxide (SiO.sub.2) layer thicker than the silicon layer.

Abstract: The method for fabricating a charge coupled device disclosed includes the steps of forming a gate oxide film and forming a transfer electrode. The provisional oxide film is formed on a semiconductor substrate, and the provisional oxide film at a transfer electrode formation region is selectively etched away. The transfer electrode from a polycrystalline silicon film on the gate oxide film of the transfer electrode formation region is selectively formed, and the provisional oxide film between transfer electrodes is etched away. Since the oxide film which protects the silicon substrate surface (oxide film/silicon interface) of the second layer transfer electrode formation region during the patterning of the first layer polycrystalline film and the insulating oxide film which covers the first layer transfer electrode surface, is formed in the two-step oxidation process, it is possible to adjust the thicknesses of the two oxide films as desired.