Patents by Inventor Shigeru Wakamatsu

Shigeru Wakamatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170153686
    Abstract: According to one embodiment, a data logger driven by a battery, includes a sensor, a log creation module, a detection module, a communication module, and a controller. The sensor measures a predetermined physical quantity. The log creation module creates a log based on the predetermined physical quantity. The detection module detects a take-over state that another data logger takes over creation of the log. The communication module communicates with said another data logger synchronized with the data logger. The controller performs a process to cause said another data logger to take over the creation of the log by communicating with said another data logger by the communication module when the take-over state is detected by the detection module.
    Type: Application
    Filed: March 9, 2016
    Publication date: June 1, 2017
    Inventor: Shigeru Wakamatsu
  • Patent number: 5802233
    Abstract: A polysilane optical device comprising a hydrocarbyloxy group-containing polysilane encapsulated with a material having a light transmitting property and air impermeability, such as a glass, a polystyrene, an acryl resin, or a polycarbonate. The optical device has a high durability, and optical characteristics and functions thereof do not greatly change.
    Type: Grant
    Filed: September 11, 1996
    Date of Patent: September 1, 1998
    Assignee: Toshiba Silicone Co., Ltd.
    Inventors: Shinichiro Sugi, Keiji Kabeta, Shigeru Wakamatsu, Takafumi Imai
  • Patent number: 5759638
    Abstract: The present invention relates to a process for forming an electronic circuit, which comprises coating a polyorganosilane on at least one surface of a substrate for forming an electronic circuit, followed by drying to form a solid state polysilane thin film, masking a portion for forming a circuit of said thin film and oxidizing a remaining portion to form an insulating portion, and then doping an oxidizing substance to the portion subjected to masking to form a conductive portion, and in order to oxidize a partial portion of the thin film, said thin film is irradiated with UV light in the presence of oxygen, preferably, in the oxidizing step, by carrying out partial oxidation while controlling an oxidation degree, the remaining portion is converted into three or more kinds of portions having different volume resistivities.
    Type: Grant
    Filed: March 4, 1997
    Date of Patent: June 2, 1998
    Assignee: Toshiba Silicone Co., Ltd.
    Inventors: Takafumi Imai, Keiji Kabeta, Kiyoaki Syuto, Shigeru Wakamatsu
  • Patent number: 5489662
    Abstract: A process for the preparation of an organosilicon polymer, which comprises reacting one equivalent of a bis(alkoxysilyl) compound represented by the following general formula:R.sup.1 R.sup.2 R.sup.3 Si--(A).sub.p --SiR.sup.1 R.sup.2 R.sup.3wherein R.sup.1, R.sup.2 and R.sup.3 each represents the same or different substituted or unsubstituted monovalent hydrocarbon group or an alkoxy group, with the proviso that at least one of R.sup.1, R.sup.2 and R.sup.3 is an alkoxy group; A represents a divalent aromatic group, a divalent conjugated or nonconjugated unsaturated aliphatic group, or a divalent saturated aliphatic group; and p represents an integer of 1 or more, with one or more equivalents of an alkoxydisilane represented by the following general formula:(OR.sup.4).sub.6-n Si.sub.2 (R.sup.5).sub.nwherein R.sup.4 and R.sup.
    Type: Grant
    Filed: August 31, 1994
    Date of Patent: February 6, 1996
    Assignee: Toshiba Silicone Co., Ltd.
    Inventors: Shigeru Wakamatsu, Keiji Kabeta, Takafumi Imai