Abstract: A bonding method including an adhesive layer forming process in which a thermoplastic adhesive is applied to a substrate or a support plate and an adhesive layer is formed; a heating process in which the adhesive layer that is formed on the substrate or the support plate is heated; and a bonding process in which the substrate and the support plate are pressed against each other via the heated adhesive layer, thereby bonding the substrate and the support plate.

Abstract: A method for modifying a substrate surface using a silylating agent that is capable of successfully modifying the substrate surface regardless of the substrate material; a modifying film which successfully adheres to a substrate surface regardless of the material of the substrate and provides a substrate that is surface-modified to a desired extent; and a coating solution which is capable of forming a coating film on a substrate surface. A silane compound layer is formed on the surface of the coating film by a silylating agent and is firmly affixed thereto. The surface of a substrate is treated with a metal compound that is capable of producing a hydroxyl group by hydrolysis. The substrate surface which has been treated with the metal compound is then treated with a silylating agent.

Abstract: A bonding method including an adhesive layer forming process in which a thermoplastic adhesive is applied to a substrate or a support plate and an adhesive layer is formed; a heating process in which the adhesive layer that is formed on the substrate or the support plate is heated; and a bonding process in which the substrate and the support plate are pressed against each other via the heated adhesive layer, thereby bonding the substrate and the support plate.

Abstract: A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S?) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.

Abstract: Provided are: a table on which a workpiece is placed, a laser oscillator emitting a laser beam; a light-guide optical system deflecting the beam emitted from the oscillator; a cylindrical extensible bellows surrounding an optical path of the beam after the light-guide optical system deflects the beam; a bend mirror moving in an axial direction of the bellows while extending/contracting the bellows and deflecting the beam having passed through the bellows toward the table; a machining head irradiating the workpiece with the beam deflected by the mirror; an abnormality detector including a beam-sensor light-emitting unit emitting a beam advancing parallel with an axis of the bellows and a beam-sensor light-receiving unit measuring the amount of received light of the beam; and a control device bringing down the laser oscillator when the amount of received light of the beam in the beam-sensor light-receiving unit falls below a first threshold.

Abstract: A photoresist stripping solution comprising (a) a specified quaternary ammonium hydroxide, such as tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, methyltributylammonium hydroxide or methyltripropylammonium hydroxide, (b) a water-soluble amine, (c) water, (d) a corrosion inhibitor and (e) a water-soluble organic solvent, the compounding ratio of component (a) to component (b) being in the range of from 1:3 to 1:10 by mass, as well as a method of stripping photoresists using the solution. The stripping solution of the invention assures effective protection of Al, Cu and other wiring metal conductors against corroding as well as efficient stripping of the photoresist film, post-ashing residues such as modified photoresist film and metal depositions. It also assures efficient stripping of Si-based residues and effective protection of the substrate (particularly the reverse side of a Si substrate) from corroding.

Abstract: It is disclosed a cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 ?m, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide or a mixed solvent thereof with N-methyl-2-pyrrolidone, sulforane, etc., and (c) 0.5-30 mass % of water, and a method for treating a substrate therewith.

Abstract: A process control apparatus controls a focus position of a laser beam, while a laser processing mechanism converges the laser beam into a predetermined focus position and performs a laser processing on a workpiece. The process control apparatus includes: a calculator that, based on the magnitude of an output of the laser beam that changes during the laser processing, calculates a change amount of a positional deviation of the focus position in an optical axis direction that changes during the laser processing at a laser beam radiation position; and a control unit that, based on the change amount of the positional deviation that has been calculated by the calculator, controls the focus position of the laser beam during the laser processing so as to resolve the positional deviation of the focus position.

Abstract: An optical path structure of a laser processing machine that irradiates a laser beam from a processing head to a workpiece to perform laser processing, includes: a casing that has an opening, a light leading unit that includes a bend block including a bend mirror which deflects a laser beam traveling within the casing toward a side of the opening and an optical path tube which protrudes from the bend block toward the side of the opening for leading the laser beam to the processing head, a sealing member that is arranged at an edge part of the opening, a moving member that is abutting against the sealing member, that slides with respect to the sealing member, and that is fixed to the light leading unit, and a drive unit that integrally moves the moving member and the light leading unit in a longitudinal direction of the moving member.

Abstract: Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Abstract: Provided are: a table on which a workpiece is placed, a laser oscillator emitting a laser beam; a light-guide optical system deflecting the beam emitted from the oscillator; a cylindrical extensible bellows surrounding an optical path of the beam after the light-guide optical system deflects the beam; a bend mirror moving in an axial direction of the bellows while extending/contracting the bellows and deflecting the beam having passed through the bellows toward the table; a machining head irradiating the workpiece with the beam deflected by the mirror; an abnormality detector including a beam-sensor light-emitting unit emitting a beam advancing parallel with an axis of the bellows and a beam-sensor light-receiving unit measuring the amount of received light of the beam; and a control device bringing down the laser oscillator when the amount of received light of the beam in the beam-sensor light-receiving unit falls below a first threshold.

Abstract: A machining head includes a machining head element having an inner-head channel for passing laser light and assist gas, the nozzle having an inner-nozzle channel connecting to the inner-head channel and a nozzle orifice, pins protruding radially inward from a curved inner surface of the nozzle, a pin-locking part formed on the outside of the machining head element, the pin-locking part having pin-fitting openings, a head alignment part formed on a nozzle-side end surface of the machining head element, a nozzle alignment part formed on the nozzle at a location where the nozzle is aligned with the machining head element, and an O-ring fitted between the head alignment part and the nozzle to create a clearance between the head alignment part and the nozzle alignment part for mutual alignment.

Abstract: A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water, and a method of stripping photoresists with the use of the same are disclosed. In case of using ammonium fluoride as component (a), the photoresist stripping solution may further contain (e) a salt of hydrofluoric acid with a quaternary ammonium hydroxide, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, etc., and/or an alkanolamine. The photoresist stripping solution of the present invention has an excellent effect of protecting both Al- and Cu-based metal wiring conductors from corrosion, of efficiently stripping photoresist films and post-ashing residues, and is free from the precipitation of the corrosion inhibitor.

Abstract: It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water.

Abstract: Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.

Abstract: Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Abstract: A process control apparatus controls a focus position of a laser beam, while a laser processing mechanism converges the laser beam into a predetermined focus position and performs a laser processing on a workpiece. The process control apparatus includes: a calculator that, based on the magnitude of an output of the laser beam that changes during the laser processing, calculates a change amount of a positional deviation of the focus position in an optical axis direction that changes during the laser processing at a laser beam radiation position; and a control unit that, based on the change amount of the positional deviation that has been calculated by the calculator, controls the focus position of the laser beam during the laser processing so as to resolve the positional deviation of the focus position.