Abstract: A soft magnetic material according to an aspect of the present invention includes a powder-particle substance having a particle size frequency distribution having a plurality of peak tops. The powder-particle substance is an aggregate of composite particles containing a plurality of soft magnetic metal particles and includes a medium powder-particle substance in which the composite particles have a particle size of 45 ?m or more and less than 300 ?m, and the medium powder-particle substance has an average circularity of 0.7 or more.

Abstract: A wireless tag for sensor control is connected to a sensor and configured to control execution of measurements using the sensor. The wireless tag for sensor control includes: an antenna for receiving a radio wave or a magnetic field transmitted from an external wireless device; a power generation unit configured to generate electric power based on the radio wave or the magnetic field received by the antenna; and a control unit configured to control the sensor using generated power, which is the electric power supplied from the power generation unit, wherein the control unit includes: a power supply control unit configured to use a portion of the generated power to execute power supply to the sensor; an acquisition unit configured to receive a detection result from the sensor operated by the execution of the power supply; and a transmission processing unit configured to transmit communication information including the detection result to the outside.

Abstract: A wireless tag for sensor control is connected to a sensor and configured to control execution of measurements using the sensor. The wireless tag for sensor control includes: an antenna for receiving a radio wave or a magnetic field transmitted from an external wireless device; a power generation unit configured to generate electric power based on the radio wave or the magnetic field received by the antenna; and a control unit configured to control the sensor using generated power, which is the electric power supplied from the power generation unit, wherein the control unit includes: a power supply control unit configured to use a portion of the generated power to execute power supply to the sensor; an acquisition unit configured to receive a detection result from the sensor operated by the execution of the power supply; and a transmission processing unit configured to transmit communication information including the detection result to the outside.

Abstract: A communication point determination device for determining a communication point including a communication position being a position of a mobile body which performs close-range wireless communication with a wireless device disposed within a target area including an obstacle which obstructs propagation of radio waves includes: a first acquisition part configured to obtain a radio wave strength map indicating a distribution of a radio wave strength within the target area obtained by numerical analysis based on area shape information of the target area generated on the basis of an outer shape of the obstacle existing within the target area, installation position information of the wireless device within the target area, and radio wave information related to transmission or response of radio waves of the wireless device; and a determination part configured to determine the communication point on the basis of the radio wave strength map.

Abstract: A detection device includes a detection unit configured to detect a moving object by using a ranging sensor able to detect the presence of a moving object movable in the target area, a determination unit configured to determine whether or not the detected moving object is a human being by using a human detection sensor able to detect a human being, and an authentication unit configured to perform authentication of the detected moving object in a case that the detected moving object is determined to be a human being. The authentication unit includes an authentication information request unit configured to request the moving object to transmit authentication information by wireless communication, and an authentication determination unit configured to determine whether or not the moving object has the right of access based on a result of the wireless communication.

Abstract: A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.

Abstract: A detection device includes a detection unit configured to detect a moving object by using a ranging sensor able to detect the presence of a moving object movable in the target area, a determination unit configured to determine whether or not the detected moving object is a human being by using a human detection sensor able to detect a human being, and an authentication unit configured to perform authentication of the detected moving object in a case that the detected moving object is determined to be a human being. The authentication unit includes an authentication information request unit configured to request the moving object to transmit authentication information by wireless communication, and an authentication determination unit configured to determine whether or not the moving object has the right of access based on a result of the wireless communication.

Abstract: A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.

Abstract: A heterojunction bipolar transistor includes a collector layer, a base layer, an emitter layer, and a semiconductor layer that are laminated in this order, wherein the emitter layer includes a first region having an upper surface on which the semiconductor layer is laminated, and a second region being adjacent to the first region and having an upper surface that is exposed, and the first and second regions of the emitter layer have higher doping concentrations in portions near the upper surfaces than in portions near an interface between the emitter layer and the base layer.

Abstract: An HBT includes a semiconductor substrate having first and second principal surfaces opposite each other; and a collector layer, a base layer, and an emitter layer stacked in this order on the first principal surface side of the semiconductor substrate. The collector layer includes a first semiconductor layer with metal particles dispersed therein, the metal particles each formed by a plurality of metal atoms bonded with each other.

Abstract: A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.

Abstract: A high-performance HBT that is unlikely to decrease the process controllability and to increase the manufacturing cost is implemented. A heterojunction bipolar transistor includes an emitter layer, a base layer, and a collector layer on a GaAs substrate. The emitter layer is formed of InGaP. The base layer is formed of GaAsPBi having a composition that substantially lattice-matches GaAs.

Abstract: A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.

Abstract: The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 3.1 ?m and not more than 5.4 ?m, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.

Abstract: A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.

Abstract: The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 3.1 ?m and not more than 5.4 ?m, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.

Abstract: Provided is an electronic apparatus that has enhanced strength and reduced weight. An electronic apparatus includes: a housing having two faces that face each other, having an accommodation space therein, and having an opening on one of the two faces; and an electronic device contained in the accommodation space. The housing is configured of a first member and a second member that are divided in the faces, and has a device insertion opening on at least one of opposing faces of the first member and the second member.

Abstract: An HBT includes a semiconductor substrate having first and second principal surfaces opposite each other; and a collector layer, a base layer, and an emitter layer stacked in this order on the first principal surface side of the semiconductor substrate. The collector layer includes a first semiconductor layer with metal particles dispersed therein, the metal particles each formed by a plurality of metal atoms bonded with each other.

Abstract: A heterojunction bipolar transistor includes a collector layer, a base layer, an emitter layer, and a semiconductor layer that are laminated in this order, wherein the emitter layer includes a first region having an upper surface on which the semiconductor layer is laminated, and a second region being adjacent to the first region and having an upper surface that is exposed, and the first and second regions of the emitter layer have higher doping concentrations in portions near the upper surfaces than in portions near an interface between the emitter layer and the base layer.

Abstract: An HBT includes a semiconductor substrate having first and second principal surfaces opposite each other; and a collector layer, a base layer, and an emitter layer stacked in this order on the first principal surface side of the semiconductor substrate. The collector layer includes a first semiconductor layer with metal particles dispersed therein, the metal particles each formed by a plurality of metal atoms bonded with each other.