Abstract: In a synchronization system adopted in a synchronous-multisystem control apparatus comprising a plurality of systems operating synchronously with each other at a fixed control period, the synchronous-multisystem control apparatus can be operated in a single-system mode in the event of failures occurring simultaneously in some of the systems. The synchronous-multisystem control apparatus employs a plurality of control circuits each provided for one of the systems.

Abstract: A dynamo-electric machine has a stator with a primary winding and a rotor with a field magnet and a shaft. the field magnet includes a first field magnet having different polarity magnetic poles sequentially arranged in a rotation direction and a second field magnet having different polarity magnetic poles sequentially arranged in a rotation direction. The machine further has a mechanism for shifting the first and the second field magnets in axial and rotation directions.

Abstract: A dynamo-electric machine has a stator with a primary winding and a rotor with a field magnet and a shaft. the field magnet includes a first field magnet having diferent polarity magnetic poles sequentially arranged in a rotation direction and a second field magnet having diferent polarity magnetic poles sequentially arranged in a rotation direction. The machine further has a mechanism for shifting the first and the second field magnets in axial and rotation directions.

Abstract: A semiconductor power converting apparatus including at least one series arrangement of MOS control semiconductor devices such as Insulator-gate Bipolar Transistors (IGBTs) or metal oxide MOS transistors which are respectively applied with a gate voltage under the control of corresponding a driver. The driver contains a supply line having a higher potential than a gate voltage of an IGBT coupled thereto when the IGBT is in a steady ON state, and is such that is causes an increase of the gate voltage of the IGBT in accordance with the current of the supply line when a potential difference between the power supply line and an emitter of the IGBT is constant and the collector voltage thereof exceeds a predetermined value under an ON state of the IGBT.

Abstract: A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.

Abstract: A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.

Abstract: A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.

Abstract: To avoid that IGBTs are destroyed by receiving overvoltages while an overcurrent flows through series-connected IGBTs of a semiconductor power converting apparatus, a gate driver for controlling a gate voltage of the MOS control semiconductor owns a power supply line having a higher potential than such a gate potential when the MOS control semiconductor is brought into a steady ON state, and when a potential difference between the power supply line and an emitter of the MOS control semiconductor is constant, and also a collector voltage of the MOS control semiconductor exceeds a predetermined value under ON state of the MOS control semiconductor, the power source line of the gate driver supplies a current from the power source line to the gate of the MOS control semiconductor so as to increase the gate voltage of the MOS control semiconductor.

Abstract: A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.

Abstract: A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.

Abstract: The object of the present invention is to provide a wind power generation system characterized by simplified field weakening of the magnetic flux of the permanent magnet of a shaft generator and a speed change control over an extensive range. In a wind power generation system comprising a main shaft where a vane is mounted, a generator connected to the main shaft for transmitting the rotating power of the vane, an inverter for converting the electric power of the generator, a controller for controlling the inverter, a means for controlling the pitch of the vane meeting the wind velocity requirements, a brake, and an anemometer/anemoscope; the present invention is characterized in that the rotor of the rotary machine comprising a permanent magnet is split to allow relative movement.

Abstract: To avoid that IGBTs are destroyed by receiving overvoltages while an overcurrent flows through series-connected IGBTs of a semiconductor power converting apparatus, a gate driver for controlling a gate voltage of the MOS control semiconductor owns a power supply line having a higher potential than such a gate potential when the MOS control semiconductor is brought into a steady ON state, and when a potential difference between the power supply line and an emitter of the MOS control semiconductor is constant, and also a collector voltage of the MOS control semiconductor exceeds a predetermined value under ON state of the MOS control semiconductor, the power source line of the gate driver supplies a current from the power source line to the gate of the MOS control semiconductor so as to increase the gate voltage of the MOS control semiconductor.

Abstract: A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.

Abstract: A compound system of a wind power generation and an electric power energy storage constituted by a plurality of wind power generators 1a and 1b, and electric power energy storage device 5a and 5b and electric power converters 6a and 6b installed in parallel with the wind power generators is provided with a composite current detecting means 8a for the wind power generators, a voltage detecting means 9a for an electric power system 18, means 8b for detecting a current of which the electric power converters input or output, means 10a for computing output electric powers Pw and Qw of the wind power generators according to the voltage of the electric power system and the detected value of composite current of the wind power generators, means 10b for computing input or output electric powers Pc and Qc of the electric power converters according to the voltage of the electric power system and the detected value of the current of the electric power converters and a control unit 11a which generates pulse signals 16a fo

Abstract: A semiconductor electric power converter in accordance with the present invention comprises an arm consisting of an IGBT, a capacitor connected between a collector and a gate of said IGBT, and a gate circuit connected to the gate of said IGBT for controlling the switching operation of said IGBT, wherein a plurality of said arms connected in series are connected in parallel and each midpoint of said arms connected in of series is connected to a load. Thereby the impedance between the gate terminal of the IGBT and the gate circuit is decreased when the gate voltage is higher than the gate voltage command value or the impedance between the gate and the emitter of the IGBT is decreased when the collector voltage is high so that an electric charge stored in the gate is rapidly discharged.

Abstract: Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.

Abstract: A semiconductor electric power converter in accordance with the present invention comprises an arm consisting of an IGBT, a capacitor connected between a collector and a gate of said IGBT, and a gate circuit connected to the gate of said IGBT for controlling the switching operation of said IGBT, wherein a plurality of said arms connected in series are connected in parallel and each midpoint of said arms connected in series is connected to a load. Thereby the impedance between the gate terminal of the IGBT and the gate circuit is decreased when the gate voltage is higher than the gate voltage command value or the impedance between the gate and the emitter of the IGBT is decreased when the collector voltage is high so that an electric charge stored in the gate is rapidly discharged.

Abstract: Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.

Abstract: A dynamo-electric machine has a stator with a primary winding and a rotor with a field magnet and a shaft. the field magnet includes a first field magnet having diferent polarity magnetic poles sequentially arranged in a rotation direction and a second field magnet having diferent polarity magnetic poles sequentially arranged in a rotation direction. The machine further has a mechanism for shifting the first and the second field magnets in axial and rotation directions.

Abstract: The object of the present invention is to provide a wind power generation system characterized by simplified field weakening of the magnetic flux of the permanent magnet of a shaft generator and a speed change control over an extensive range.