Patents by Inventor Shigetaka Uji

Shigetaka Uji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with copper wiring and its manufacture method
    Patent number: 6440844
    Abstract: The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.
    Type: Grant
    Filed: July 8, 1998
    Date of Patent: August 27, 2002
    Assignee: Fujitsu Limited
    Inventors: Hideo Takagi, Kiyoshi Izumi, Wataru Futo, Satoshi Otsuka, Shigetaka Uji, Masataka Hoshino, Yukihiro Satoh, Koji Endo, Yuzuru Ohta, Nobuhiro Misawa
  • SEMICONDUCTOR DEVICE WITH COPPER WIRING AND ITS MANUFACTURE METHOD
    Publication number: 20020027287
    Abstract: To reduce the connection resistance between copper wirings, and to improve the reliability of the wiring such as anti-electromigration characteristics.
    Type: Application
    Filed: July 8, 1998
    Publication date: March 7, 2002
    Applicant: FUJITSU LIMITED
    Inventors: HIDEO TAKAGI, KIYOSHI IZUMI, WATARU FUTO, SATOSHI OTSUKA, SHIGETAKA UJI, MASATAKA HOSHINO, YUKIHIRO SATOH, KOJI ENDO, YUZURU OHTA, NOBUHIRO MISAWA
  • Semiconductor device manufacturing method
    Patent number: 6153522
    Abstract: A semiconductor device manufacturing method of the present invention comprises the steps of forming a groove on an insulating film formed over a semiconductor substrate, forming a first copper film on the insulating film and in the groove by sputtering using a target, reflowing the first copper film by heating it, growing a second copper film on the first copper film by plating or chemical vapor deposition, and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove. Accordingly, in the semiconductor device manufacturing method to provide copper wirings, increase in resistance can be suppressed by firmly embedding copper into the groove and also electromigration resistance of copper wirings can be improved.
    Type: Grant
    Filed: October 28, 1998
    Date of Patent: November 28, 2000
    Assignee: Fujitsu Limited
    Inventors: Hideo Takagi, Shigetaka Uji, Shyoji Hirao