Abstract: There is disclosed a method and apparatus for forming a thin film of a composite metal compound. Independent targets formed of at least two different metals are sputtered so as to form on a substrate an ultra-thin film of a composite metal or an incompletely-reacted composite metal. The ultra-thin film is irradiated with the electrically neutral, activated species of a reactive gas so as to convert the composite metal or the incompletely-reacted composite metal to a composite metal compound through the reaction of the ultra-thin film with the activated species of the reactive gas. The formation of the ultra-thin film and the conversion to the composite metal compound are sequentially repeated so as to form on the substrate a thin film of the composite metal compound having a desired thickness.

Abstract: There is disclosed a method and apparatus for forming a thin film of a composite metal compound. Independent targets formed of at least two different metals are sputtered so as to form on a substrate an ultra-thin film of a composite metal or an incompletely-reacted composite metal. The ultra-thin film is irradiated with the electrically neutral, activated species of a reactive gas so as to convert the composite metal or the incompletely-reacted composite metal to a composite metal compound through the reaction of the ultra-thin film with the activated species of the reactive gas. The formation of the ultra-thin film and the conversion to the composite metal compound are sequentially repeated so as to form on the substrate a thin film of the composite metal compound having a desired thickness.

Abstract: There is disclosed a method and apparatus for forming a thin film of a composite metal compound. Independent targets formed of at least two different metals are sputtered so as to form on a substrate an ultra-thin film of a composite metal or an incompletely-reacted composite metal. The ultra-thin film is irradiated with the electrically neutral, activated species of a reactive gas so as to convert the composite metal or the incompletely-reacted composite metal to a composite metal compound through the reaction of the ultra-thin film with the activated species of the reactive gas. The formation of the ultra-thin film and the conversion to the composite metal compound are sequentially repeated so as to form on the substrate a thin film of the composite metal compound having a desired thickness.

Abstract: A multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray, comprises a substrate, a plurality of first layers, and a plurality of second layers formed on the substrate alternately with the first layers. The first layers primarily consists of at least one of single elements, such as ruthenium, or of a boride carbide, silicate, nitride oxide of a transition metal. The second layers primarily consists of at least one of compounds of carbon, silicon (e.g. carbide, nitride and oxide of silicon), boron (e.g. carbide, nitride and oxide of boron), beryllium (e.g. carbide, nitride and oxide of beryllium) and aluminum (e.g. carbide, nitride and oxide of aluminum).

Abstract: A multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray, comprises a substrate, a plurality of first layers, and a plurality of second layers formed on the substrate alternately with the first layers. The first layer primarily consists of at least one of single elements, such as ruthenium or of a boride, carbide, silicide, nitride oxide of a transition metal. The second layer primarily consists of at least one of compounds of carbon, silicon (e.g. carbide, nitride and oxide of silicon), boron (e.g. carbide, nitride and oxide of boron), beryllium (e.g. carbide, nitride and oxide of beryllium) and aluminum (e.g. carbide, nitride and oxide of aluminum).

Abstract: An X-ray exposure apparatus includes a stage for holding a mask having a pattern for circuit manufacturing, a stage for holding a wafer to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing at least three, but not more than five, reflecting mirrors coated with multi-layer films for receiving X-rays from the mask and directing them to the wafer to expose the wafer to the pattern of the mask with the X-ray in a reduced scale.

Abstract: A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.

Abstract: An X-ray mask support member comprises a support frame, and a support membrane which is held thereon and comprises X-ray-transmissive membranes laminated in multiple layers. The support membrane comprises and holds between the multi-layers at least one layer of a transmissive membrane T having an electrical resistivity of 1.times.10.sup.-4 .OMEGA..multidot.cm or less.

Abstract: In a light waveguide lens comprises a light waveguide and a lens portion provided in a portion of the light waveguide, the refractive index of the light waveguide and/or the lens portion is variable to vary the focal length of the lens portion, thereby causing the waveguide light to be accurately converged at a predetermined position.

Abstract: This specification discloses an integrated optical circuit element comprising a substrate, a wave guide layer formed on the substrate and having a refractive index higher than that of the substrate, and a photocoupler which is a diffraction grating pattern formed in the wave guide layer and having the same refractive index as that of the substrate. The specification also discloses a method of making an integrated optical circuit element which comprises the steps of forming a mask of diffraction grating pattern on a substrate, forming a layer having a refractive index higher than that of the substrate in a portion of the substrate which is not covered by the mask, and removing the mask.

Abstract: A waveguide for propagating a light beam, a coupler for coupling the light beam to the waveguide, and a thin film layer provided on the bottom surface of the coupler and consisting of a substance having a refractive index lower than the refractive indices of the waveguide and the coupler, the coupler being joined to the waveguide by optical contact with the thin film layer interposed therebetween, together constitute an optical coupler device which is compact and stable in optical coupling characteristic.

Abstract: A liquid jet recording method and apparatus for recording information on a recording medium. A laser beam is irradiated onto an opto-mechanical transducer provided at a position, in a liquid flow path having at its distal end a discharge orifice for ejecting liquid in a predetermined direction and a pressure acting zone, at which a pressure acts on the recording liquid filled in that portion of the flow path, where the pressure as generated is effectively transmitted to the recording liquid filled in the pressure acting zone. This enables the liquid to be ejected from the discharge orifice, by which laser beam irradiation mechanical displacement is caused to deform the wall of the pressure acting zone to thereby bring about abrupt pressure change in the liquid filled in the pressure acting zone to eject the liquid from the discharge orifice in the form of droplets which fly toward the surface of a recording medium, on which the droplets adhere to make a necessary recording.