Patents by Inventor Shigeto Fujita

Shigeto Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200412046
    Abstract: The object is to provide a technology that can prevent a spring electrode from being dissolved and broken upon a short circuit in a semiconductor chip. A spring electrode includes a main body. The main body is a tubular conductor, and varies in diameter in a longitudinal direction so that a side surface has bellows. Since the main body of the spring electrode does not include an edge portion, the local concentration of a short-circuit current that flows through the spring electrode upon a short circuit in a semiconductor chip can be reduced. This can prevent the spring electrode from being dissolved and broken.
    Type: Application
    Filed: August 28, 2017
    Publication date: December 31, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Shigeto FUJITA, Yoshikazu YAJI
  • Publication number: 20200297022
    Abstract: Providing a mixing apparatus capable of efficiently input noodles coated with an additive to a receiving tray, and having no need to perform weighing again after the noodles are input to the receiving tray. The mixing apparatus 8 includes: a hopper 30 that houses the falling noodles and that allows noodles to fall while rotating; and a supply device 60 that supplies a sauce to the noodles in the hopper 30, and at least two hopper 30 are provided in a falling direction.
    Type: Application
    Filed: January 9, 2020
    Publication date: September 24, 2020
    Applicants: MAYEKAWA MFG. CO., LTD., AJINOMOTO CO., INC.
    Inventors: Shigeto KOGA, Hiroshi FUJITA, Yoshihiro UCHIDA, Kazuhiro TOYOTA, Takahiro KAWASOE
  • Patent number: 10770420
    Abstract: A lower electrode, an upper electrode provided above the lower electrode, a semiconductor chip provided between the lower electrode and the upper electrode, a pressure pad provided between the lower electrode and the upper electrode to be overlapped with the semiconductor chip, and a spiral conductor provided between the lower electrode and the upper electrode to be overlapped with the semiconductor chip and the pressure pad are provided. The spiral conductor has an upper spiral conductor, and a lower spiral conductor which is in contact with a lower end of the upper spiral conductor and faces the upper spiral conductor, and by forming grooves in the upper spiral conductor and the lower spiral conductor, a direction of a current flowing through the upper spiral conductor coincides with a direction of a current flowing through the lower spiral conductor in plan view.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: September 8, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shigeto Fujita, Takashi Inaguchi
  • Patent number: 10658268
    Abstract: A lower electrode, a semiconductor chip provided on the lower electrode, a pressure pad provided above or below the semiconductor chip, an upper electrode provided on a structure in which the pressure pad is overlapped with the semiconductor chip, and a connection conductor that provides a new current path between the lower electrode and the upper electrode only when a distance between the lower electrode and the upper electrode becomes larger than a predetermined value are provided. The distance between the lower electrode and the upper electrode is variable, and the pressure pad electrically connects the lower electrode and the upper electrode together via the semiconductor chip regardless of the distance between the lower electrode and the upper electrode.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: May 19, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shigeto Fujita, Tetsuya Matsuda
  • Publication number: 20200152595
    Abstract: An object of the present invention is to provide a spring electrode for preventing disconnection of a conductive path when a semiconductor chip is short-circuited in a press-pack power semiconductor module. A spring electrode for a press-pack power semiconductor module according to the present invention includes: a first electrode in contact with a power semiconductor chip; a second electrode arranged to face the first electrode; and a pressure pad which connects the first electrode and the second electrode and has flexibility in a normal direction of opposing surfaces of the first electrode and the second electrode, in which the opposing surfaces of the first electrode and the second electrode are polygons of a pentagon or more, and in which sides of the opposing surface of the first electrode and sides of the opposing surface of the second electrode corresponding to these sides are connected in parallel by the pressure pad.
    Type: Application
    Filed: August 31, 2017
    Publication date: May 14, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Shigeto FUJITA, Tetsuya MATSUDA
  • Patent number: 10593633
    Abstract: It is an object of the present invention to provide a semiconductor module which suppresses a break in a current path and occurrence of arc discharge when a semiconductor chip is short-circuited. A semiconductor module 100 according to the present invention includes at least one semiconductor chip 2, a housing 5 in which the semiconductor chip 2 is stored, and at least one pressurizing member which is placed between an upper electrode 2a of the semiconductor chip 2 and an upper-side electrode 3 provided in the housing 5 and electrically connects the upper electrode 2a and the upper-side electrode 3, the pressurizing member 10 is elastic, and the pressurizing member 10 includes a conductive block 12 and a plate spring member 11 including current paths 11a and 11b which are opposed to each other with at least a part of the conductive block 12 located between the current paths 11a and 11b.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: March 17, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shigeto Fujita, Tetsuya Matsuda
  • Publication number: 20200035640
    Abstract: A lower electrode, an upper electrode provided above the lower electrode, a semiconductor chip provided between the lower electrode and the upper electrode, a pressure pad provided between the lower electrode and the upper electrode to be overlapped with the semiconductor chip, and a spiral conductor provided between the lower electrode and the upper electrode to be overlapped with the semiconductor chip and the pressure pad are provided. The spiral conductor has an upper spiral conductor, and a lower spiral conductor which is in contact with a lower end of the upper spiral conductor and faces the upper spiral conductor, and by forming grooves in the upper spiral conductor and the lower spiral conductor, a direction of a current flowing through the upper spiral conductor coincides with a direction of a current flowing through the lower spiral conductor in plan view.
    Type: Application
    Filed: September 7, 2016
    Publication date: January 30, 2020
    Applicant: Mitsubishi Electric Corporation
    Inventors: Shigeto FUJITA, Takashi INAGUCHI
  • Patent number: 10536090
    Abstract: There has been a problem that a chip or a power module is broken by a repulsive electromagnetic force between positive and negative bus bars and an arc is generated, so that the failure is escalated. Therefore, positive and negative bus bars connecting two devices are configured so as to form a one-turn-loop current path, thereby suppressing a repulsive electromagnetic force occurring between the bus bars and decreasing a possibility of occurrence of an arc at the power module.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: January 14, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tetsuya Matsuda, Shigeto Fujita, Tetsuo Motomiya
  • Publication number: 20190319544
    Abstract: There has been a problem that a chip or a power module is broken by a repulsive electromagnetic force between positive and negative bus bars and an arc is generated, so that the failure is escalated. Therefore, positive and negative bus bars connecting two devices are configured so as to form a one-turn-loop current path, thereby suppressing a repulsive electromagnetic force occurring between the bus bars and decreasing a possibility of occurrence of an arc at the power module.
    Type: Application
    Filed: August 1, 2017
    Publication date: October 17, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tetsuya MATSUDA, Shigeto FUJITA, Tetsuo MOTOMIYA
  • Publication number: 20190198459
    Abstract: It is an object of the present invention to provide a semiconductor module which suppresses a break in a current path and occurrence of arc discharge when a semiconductor chip is short-circuited. A semiconductor module 100 according to the present invention includes at least one semiconductor chip 2, a housing 5 in which the semiconductor chip 2 is stored, and at least one pressurizing member which is placed between an upper electrode 2a of the semiconductor chip 2 and an upper-side electrode 3 provided in the housing 5 and electrically connects the upper electrode 2a and the upper-side electrode 3, the pressurizing member 10 is elastic, and the pressurizing member 10 includes a conductive block 12 and a plate spring member 11 including current paths 11a and 11b which are opposed to each other with at least a part of the conductive block 12 located between the current paths 11a and 11b.
    Type: Application
    Filed: September 13, 2016
    Publication date: June 27, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Shigeto FUJITA, Tetsuya MATSUDA
  • Publication number: 20190189538
    Abstract: A lower electrode, a semiconductor chip provided on the lower electrode, a pressure pad provided above or below the semiconductor chip, an upper electrode provided on a structure in which the pressure pad is overlapped with the semiconductor chip, and a connection conductor that provides a new current path between the lower electrode and the upper electrode only when a distance between the lower electrode and the upper electrode becomes larger than a predetermined value are provided. The distance between the lower electrode and the upper electrode is variable, and the pressure pad electrically connects the lower electrode and the upper electrode together via the semiconductor chip regardless of the distance between the lower electrode and the upper electrode.
    Type: Application
    Filed: September 9, 2016
    Publication date: June 20, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Shigeto FUJITA, Tetsuya MATSUDA
  • Patent number: 8350319
    Abstract: A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.
    Type: Grant
    Filed: April 1, 2011
    Date of Patent: January 8, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shigeto Fujita, Khalid Hassan Hussein, Junichi Yamashita, Hisao Kondo
  • Publication number: 20120012947
    Abstract: A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.
    Type: Application
    Filed: April 1, 2011
    Publication date: January 19, 2012
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shigeto FUJITA, Khalid Hassan Hussein, Junichi Yamashita, Hisao Kondo
  • Patent number: 5038034
    Abstract: A scanning tunneling microscope is arranged to cause a tunneling current to flow through a gap between a specimen and a probe housed in a vacuum chamber, and is provided with a working arrangement for reshaping the probe. The arrangement enables the reshaping of the probe without releasing a vacuum in the vacuum chamber.
    Type: Grant
    Filed: August 29, 1989
    Date of Patent: August 6, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Shigeto Fujita
  • Patent number: 4893019
    Abstract: The ion current generator is employed for thin film formation, ion implantation, etching, sputtering or the like. A vaporizer supplies material atoms to a predetermined region, and then, the material atoms are excited to a Rydberg state by lasers supplied from laser oscillators. The material atoms thus excited are ionized by an electric field applied from electric field application means, to be lead to a predetermined direction. Accordingly, an ion current can be generated at a high efficiency and low cost.
    Type: Grant
    Filed: April 26, 1988
    Date of Patent: January 9, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tatsuo Oomori, Kouichi Ono, Shigeto Fujita
  • Patent number: 4716295
    Abstract: An ion beam generator having an ion generating section for generating ions where the material to be ionized is introduced and a light source for introducing a light into the ion generating sections. This light has a wavelength such that it excites the material to be ionized to the intermediate state from the ground state of the material by a resonance excitation. The specific material to be taken out as an ion beam is selectively ionized through the intermediate state.
    Type: Grant
    Filed: October 1, 1985
    Date of Patent: December 29, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshihiro Ueda, Kouichi Ono, Tatsuo Oomori, Shigeto Fujita
  • Patent number: 4710937
    Abstract: A dye laser system for emitting laser beams of various wavelengths, which includes a plurality of dye vessels apart from each other and a mirror for oscillating the laser beams and for reflecting the beams to a beam splitter. Two wavelength selectors are provided for directing a specific wavelength portion of the beams to the beam splitter and for directing a specific wavelength portion of the beams to the mirror.
    Type: Grant
    Filed: April 14, 1986
    Date of Patent: December 1, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tatsuo Oomori, Kouichi Ono, Shigeto Fujita
  • Patent number: 4692627
    Abstract: An ion beam generator includes: an ion generating section for generating ions and where the material to be ionized is introduced; a gas discharge device for exciting the material to be ionized to a low excited state; a light source for introducing a light into the ion generating section, which light has a wavelength such that it excites the material to be ionized to an intermediate state from the low excited state of the material by a resonance excitation; and the specific material to be taken out as an ion beam being selectively ionized through the intermediate state.
    Type: Grant
    Filed: October 1, 1985
    Date of Patent: September 8, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshihiro Ueda, Kouichi Ono, Tatsuo Oomori, Shigeto Fujita