Abstract: An uneven current distribution among a plurality of provided power semiconductor chips is to be suppressed. A power semiconductor module includes a module main body, a plurality of power semiconductor chips arranged on an upper surface of the module main body, and peripheral structures being insulating ferromagnets surrounding parts of a periphery of the module main body in a plan view, in which the plurality of power semiconductor chips are arranged in a vertical direction and a horizontal direction in a plan view, and at least one of the plurality of power semiconductor chips is arranged so as to be surrounded by other power semiconductor chips.

Abstract: A spring electrode for a press-pack power semiconductor module includes a first electrode in contact with a power semiconductor chip, a second electrode arranged to face the first electrode, and a pressure pad which connects the first electrode and the second electrode and has flexibility in a normal direction of opposing surfaces of the first electrode and the second electrode. The opposing surfaces of the first electrode and the second electrode can be polygons of a pentagon or more, the pressure pad can be a cylindrical conductor or a plurality of wire conductors, and sides of the opposing surface of the first electrode and sides of the opposing surface of the second electrode corresponding to these sides are connected in parallel by the pressure pad.

Abstract: A semiconductor device includes a plurality of semiconductor chips, an insulating part, a first electrode, a second electrode, a first bus bar, and a second bus bar. The insulating part surrounds the semiconductor chips. The first electrode is in pressure contact with the semiconductor chips. The semiconductor chips are sandwiched between the first electrode and the second electrode in a first direction. The second electrode is in pressure contact with the semiconductor chips. The first bus bar is connected to the first electrode. The second bus bar is connected to the second electrode. The first bus bar and the second bus bar sandwich the insulating part in a second direction intersecting the first direction.

Abstract: The object is to provide a technology that can prevent a spring electrode from being dissolved and broken upon a short circuit in a semiconductor chip. A spring electrode includes a main body. The main body is a tubular conductor, and varies in diameter in a longitudinal direction so that a side surface has bellows. Since the main body of the spring electrode does not include an edge portion, the local concentration of a short-circuit current that flows through the spring electrode upon a short circuit in a semiconductor chip can be reduced. This can prevent the spring electrode from being dissolved and broken.

Abstract: An uneven current distribution among a plurality of provided power semiconductor chips is to be suppressed. A power semiconductor module includes a module main body, a plurality of power semiconductor chips arranged on an upper surface of the module main body, and peripheral structures being insulating ferromagnets surrounding parts of a periphery of the module main body in a plan view, in which the plurality of power semiconductor chips are arranged in a vertical direction and a horizontal direction in a plan view, and at least one of the plurality of power semiconductor chips is arranged so as to be surrounded by other power semiconductor chips.

Abstract: The object is to provide a technology that can prevent a spring electrode from being dissolved and broken upon a short circuit in a semiconductor chip. A spring electrode includes a main body. The main body is a tubular conductor, and varies in diameter in a longitudinal direction so that a side surface has bellows. Since the main body of the spring electrode does not include an edge portion, the local concentration of a short-circuit current that flows through the spring electrode upon a short circuit in a semiconductor chip can be reduced. This can prevent the spring electrode from being dissolved and broken.

Abstract: A lower electrode, an upper electrode provided above the lower electrode, a semiconductor chip provided between the lower electrode and the upper electrode, a pressure pad provided between the lower electrode and the upper electrode to be overlapped with the semiconductor chip, and a spiral conductor provided between the lower electrode and the upper electrode to be overlapped with the semiconductor chip and the pressure pad are provided. The spiral conductor has an upper spiral conductor, and a lower spiral conductor which is in contact with a lower end of the upper spiral conductor and faces the upper spiral conductor, and by forming grooves in the upper spiral conductor and the lower spiral conductor, a direction of a current flowing through the upper spiral conductor coincides with a direction of a current flowing through the lower spiral conductor in plan view.

Abstract: A lower electrode, a semiconductor chip provided on the lower electrode, a pressure pad provided above or below the semiconductor chip, an upper electrode provided on a structure in which the pressure pad is overlapped with the semiconductor chip, and a connection conductor that provides a new current path between the lower electrode and the upper electrode only when a distance between the lower electrode and the upper electrode becomes larger than a predetermined value are provided. The distance between the lower electrode and the upper electrode is variable, and the pressure pad electrically connects the lower electrode and the upper electrode together via the semiconductor chip regardless of the distance between the lower electrode and the upper electrode.

Abstract: An object of the present invention is to provide a spring electrode for preventing disconnection of a conductive path when a semiconductor chip is short-circuited in a press-pack power semiconductor module. A spring electrode for a press-pack power semiconductor module according to the present invention includes: a first electrode in contact with a power semiconductor chip; a second electrode arranged to face the first electrode; and a pressure pad which connects the first electrode and the second electrode and has flexibility in a normal direction of opposing surfaces of the first electrode and the second electrode, in which the opposing surfaces of the first electrode and the second electrode are polygons of a pentagon or more, and in which sides of the opposing surface of the first electrode and sides of the opposing surface of the second electrode corresponding to these sides are connected in parallel by the pressure pad.

Abstract: It is an object of the present invention to provide a semiconductor module which suppresses a break in a current path and occurrence of arc discharge when a semiconductor chip is short-circuited. A semiconductor module 100 according to the present invention includes at least one semiconductor chip 2, a housing 5 in which the semiconductor chip 2 is stored, and at least one pressurizing member which is placed between an upper electrode 2a of the semiconductor chip 2 and an upper-side electrode 3 provided in the housing 5 and electrically connects the upper electrode 2a and the upper-side electrode 3, the pressurizing member 10 is elastic, and the pressurizing member 10 includes a conductive block 12 and a plate spring member 11 including current paths 11a and 11b which are opposed to each other with at least a part of the conductive block 12 located between the current paths 11a and 11b.

Abstract: A lower electrode, an upper electrode provided above the lower electrode, a semiconductor chip provided between the lower electrode and the upper electrode, a pressure pad provided between the lower electrode and the upper electrode to be overlapped with the semiconductor chip, and a spiral conductor provided between the lower electrode and the upper electrode to be overlapped with the semiconductor chip and the pressure pad are provided. The spiral conductor has an upper spiral conductor, and a lower spiral conductor which is in contact with a lower end of the upper spiral conductor and faces the upper spiral conductor, and by forming grooves in the upper spiral conductor and the lower spiral conductor, a direction of a current flowing through the upper spiral conductor coincides with a direction of a current flowing through the lower spiral conductor in plan view.

Abstract: There has been a problem that a chip or a power module is broken by a repulsive electromagnetic force between positive and negative bus bars and an arc is generated, so that the failure is escalated. Therefore, positive and negative bus bars connecting two devices are configured so as to form a one-turn-loop current path, thereby suppressing a repulsive electromagnetic force occurring between the bus bars and decreasing a possibility of occurrence of an arc at the power module.

Abstract: There has been a problem that a chip or a power module is broken by a repulsive electromagnetic force between positive and negative bus bars and an arc is generated, so that the failure is escalated. Therefore, positive and negative bus bars connecting two devices are configured so as to form a one-turn-loop current path, thereby suppressing a repulsive electromagnetic force occurring between the bus bars and decreasing a possibility of occurrence of an arc at the power module.

Abstract: It is an object of the present invention to provide a semiconductor module which suppresses a break in a current path and occurrence of arc discharge when a semiconductor chip is short-circuited. A semiconductor module 100 according to the present invention includes at least one semiconductor chip 2, a housing 5 in which the semiconductor chip 2 is stored, and at least one pressurizing member which is placed between an upper electrode 2a of the semiconductor chip 2 and an upper-side electrode 3 provided in the housing 5 and electrically connects the upper electrode 2a and the upper-side electrode 3, the pressurizing member 10 is elastic, and the pressurizing member 10 includes a conductive block 12 and a plate spring member 11 including current paths 11a and 11b which are opposed to each other with at least a part of the conductive block 12 located between the current paths 11a and 11b.

Abstract: A lower electrode, a semiconductor chip provided on the lower electrode, a pressure pad provided above or below the semiconductor chip, an upper electrode provided on a structure in which the pressure pad is overlapped with the semiconductor chip, and a connection conductor that provides a new current path between the lower electrode and the upper electrode only when a distance between the lower electrode and the upper electrode becomes larger than a predetermined value are provided. The distance between the lower electrode and the upper electrode is variable, and the pressure pad electrically connects the lower electrode and the upper electrode together via the semiconductor chip regardless of the distance between the lower electrode and the upper electrode.

Abstract: A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.

Abstract: A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.

Abstract: A scanning tunneling microscope is arranged to cause a tunneling current to flow through a gap between a specimen and a probe housed in a vacuum chamber, and is provided with a working arrangement for reshaping the probe. The arrangement enables the reshaping of the probe without releasing a vacuum in the vacuum chamber.

Abstract: The ion current generator is employed for thin film formation, ion implantation, etching, sputtering or the like. A vaporizer supplies material atoms to a predetermined region, and then, the material atoms are excited to a Rydberg state by lasers supplied from laser oscillators. The material atoms thus excited are ionized by an electric field applied from electric field application means, to be lead to a predetermined direction. Accordingly, an ion current can be generated at a high efficiency and low cost.

Abstract: An ion beam generator having an ion generating section for generating ions where the material to be ionized is introduced and a light source for introducing a light into the ion generating sections. This light has a wavelength such that it excites the material to be ionized to the intermediate state from the ground state of the material by a resonance excitation. The specific material to be taken out as an ion beam is selectively ionized through the intermediate state.