Abstract: Such a vapor-deposited barrier film is provided that has a vapor-deposited layer having uniform film quality, a high film density and high barrier performance in the initial stage. The vapor-deposited barrier film contains a substrate having on at least one surface thereof at least one layer of a vapor-deposited layer (a). The vapor-deposited layer (a) contains a metal oxide, has a thickness of from 10 to 500 nm, and has an average value of an elemental ratio of oxygen (O) and the metal (oxygen (O)/metal) of 1.20 or more and 1.90 or less and a difference between the maximum value and the minimum value of the (oxygen (O)/metal) of 0.35 or less on analysis of the vapor-deposited layer in the depth direction thereof by an X-ray photoelectron spectroscopy (ESCA) method.

Abstract: Such a vapor-deposited barrier film is provided that has a vapor-deposited layer having uniform film quality, a high film density and high barrier performance in the initial stage. The vapor-deposited barrier film contains a substrate having on at least one surface thereof at least one layer of a vapor-deposited layer (a). The vapor-deposited layer (a) contains a metal oxide, has a thickness of from 10 to 500 nm, and has an average value of an elemental ratio of oxygen (O) and the metal (oxygen (O)/metal) of 1.20 or more and 1.90 or less and a difference between the maximum value and the minimum value of the (oxygen (O)/metal) of 0.35 or less on analysis of the vapor-deposited layer in the depth direction thereof by an X-ray photoelectron spectroscopy (ESCA) method.

Abstract: Provided are a gas-barrier laminate film which shows good productivity, has high transparency, exhibits high-level gas-barrier properties and has excellent adhesion strength between the constituent layers therein, and which curls little; and a method for producing the film. The gas-barrier laminate film has, on at least one surface of a substrate film thereof, an inorganic thin layer formed by a vacuum vapor deposition, an inorganic thin layer formed by a chemical vapor deposition, and an inorganic thin layer formed by a vacuum vapor deposition in that order thereon, wherein the thickness of the inorganic thin layer formed by vacuum vapor deposition is from 0.1 nm to 500 nm, and the carbon content in the inorganic thin layer formed by chemical vapor deposition is from 0.5 at % to less than 20 at %, and the thickness of the layer is less than 20 nm.