Patents by Inventor Shigeto Maekawa

Shigeto Maekawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a solid state image sensing device
    Patent number: 4791070
    Abstract: A solid state image sensor including a photoelectric transducing diode (PD) formed on an n-type semiconductor substrate (1) and a MOS transistor (TRs). A signal photoelectrically transduced by the diode (PD) is amplified by a pnp-type transistor (TRa) formed on the substrate and between the diode (PD) and the MOS transistor (TRa). The amplified signal is read out by the MOS transistor. The source (4) of the MOS transistor is connected to the emitter (21) of the pnp-type transistor partly by a polysilicon (91).
    Type: Grant
    Filed: February 6, 1987
    Date of Patent: December 13, 1988
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tadashi Hirao, Shigeto Maekawa
  • Solid state image sensing device
    Patent number: 4665422
    Abstract: A solid state image sensor including a photoelectric transducing diode (PD) formed on an n-type semiconductor substrate (1) and a MOS transistor (TRs). A signal photoelectrically transduced by the diode (PD) is amplified by a pnp-type transistor (TRa) formed on the substrate and between the diode (PD) and the MOS transistor (TRa). The amplified signal is read out by the MOS transistor. The source (41) of the MOS transistor is connected to the emitter (21) of the pnp-type transistor partly by a polysilicon (91).
    Type: Grant
    Filed: July 3, 1984
    Date of Patent: May 12, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tadashi Hirao, Shigeto Maekawa