Abstract: According to one embodiment, a power generation element includes an element part. The element part includes a first conductive member, a second conductive member, and a plurality of first structure bodies provided between the first conductive member and the second conductive member. One of the first structure bodies includes a first portion and a second portion. The first portion is fixed to the first conductive member. The second portion is between the first portion and the second conductive member. A second length along a second direction of the second portion is less than a first length along the second direction of the first portion. The second direction crosses a first direction from the first conductive member toward the second conductive member.

Abstract: According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.

Abstract: According to one embodiment, an electron source includes a base body and a first cathode layer. The first cathode layer includes a first diamond layer including a plurality of first polycrystalline diamonds, and a first member including a first element. At least a part of the first diamond layer is located between the base body and the first member. The first element includes at least one selected from the group consisting of Pd, Ni, Co, W, Mo, Ir and Ru.

Abstract: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.

Abstract: A power generation element includes a first crystal region including Alx1Ga1-x1N (0<x1?1), and a second crystal region including a first element and Alx2Ga1-x2N (0?x2<x1). The first element includes at least one selected from the group consisting of Si, Ge, Te, and Sn. The first crystal region includes a first surface and a second surface. The second surface is between the second crystal region and the first surface. The second crystal region includes a third surface and a fourth surface. The third surface is between the fourth surface and the first crystal region. An orientation from the fourth surface toward the third surface is along a <0001> direction of the second crystal region. An orientation from the second surface toward the first surface is along a <000-1> direction of the first crystal region.

Abstract: According to one embodiment, a semiconductor device, includes first to third electrodes, first to third layers, and an insulating member. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes first to fifth partial regions. The fourth partial region is located between the first and third partial regions. The fifth partial region is located between the third and second partial regions. The second layer includes a first compound region provided between the third partial region and the third electrode. The third layer includes first to third portions. The third portion is located between the third partial region and the first compound region. The insulating member includes a first insulating region. The first insulating region is located between the first compound region and the third electrode.

Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0<x1?1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.

Abstract: According to one embodiment, an electron-emitting element includes a first member and a second member. The first member includes a semiconductor member of an n-type. The second member includes a diamond member a p-type and includes at least one selected from the group consisting of diamond and graphite. The semiconductor member includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material includes nitrogen and at least one selected from the group consisting of B, Al, In, and Ga. The second material includes at least one selected from the group consisting of ZnO and ZnMgO. The third material includes at least one selected from the group consisting of BaTiO3, PbTiO3, Pb(Zrx, Ti1-x)O3, KNbO3, LiNbO3, LiTaO3, NaxWO3, Zn2O3, Ba2NaNb5O5, Pb2KNb5O15, and Li2B4O7.

Abstract: According to one embodiment, a thermionic power generation element includes a cathode, an anode, and an insulating member. The cathode includes an electrically-conductive material. The anode includes an electrically-conductive material. The insulating member is located between the cathode and the anode. The cathode and the anode have a gap between the cathode and the anode. A first through-hole is provided in the anode. The first through-hole extends through the anode in a first direction and communicates with the gap. The first direction is from the cathode toward the anode.

Abstract: According to one embodiment, a plasma source includes a container being configured to store a gas, a cathode member, and an anode member. The cathode member is provided in the container. The cathode member includes a plurality of first cathode layers. Each the cathode layers are arranged along a plurality of sides of a polygon. Each of the first cathode layers includes a first surface facing inside the polygon. The first surface is planar. The anode member is provided in the container.

Abstract: According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A <000-1> direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.

Abstract: According to one embodiment, an electron-emitting electrode includes a first member, a first diamond member, and a second diamond member. A surface of the first member includes a first region and a second region. The first diamond member is provided at the first region. The first diamond member includes a first element that includes at least one of nitrogen, phosphorus, arsenic, antimony, and bismuth. The second diamond member is provided at the second region. The second diamond member includes a second element that includes at least one of boron, aluminum, gallium, and indium.

Abstract: According to one embodiment, an electron-emitting electrode includes a first member, a first diamond member, and a second diamond member. A surface of the first member includes a first region and a second region. The first diamond member is provided at the first region. The first diamond member includes a first element that includes at least one of nitrogen, phosphorus, arsenic, antimony, and bismuth. The second diamond member is provided at the second region. The second diamond member includes a second element that includes at least one of boron, aluminum, gallium, and indium.

Abstract: According to one embodiment, a power generation element includes a first conductive region including a first surface, a plurality of second conductive regions, and a plurality of insulating structure regions. The second conductive regions are arranged along the first surface. A gap is provided between the second conductive regions and the first surface. One of the structure regions is provided between one of the second conductive regions and the first surface. An other one of the structure regions is provided between an other one of the second conductive regions and the first surface.

Abstract: According to one embodiment, a switch device includes a container configured to house a gas, a cathode located in the container, a first anode located in the container, and a second anode located in the container. A second direction from the cathode toward the second anode crosses a first direction from the cathode toward the first anode. A second distance between the cathode and the second anode is greater than a first distance between the cathode and the first anode.

Abstract: According to one embodiment, a power generation element, includes a first conductive layer, a second conductive layer, and a crystal member. A direction from the second conductive layer toward the first conductive layer is along a first direction. The crystal member is provided between the first conductive layer and the second conductive member. The crystal member includes a crystal pair. The crystal pair includes a first crystal part and a second crystal part. A second direction from the first crystal part toward the second crystal part crosses the first direction. A gap is provided between the first crystal part and the second crystal part. The first conductive layer is electrically connected to the first crystal part. The second conductive layer is electrically connected to the second crystal part.

Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0<x1?1) including a third element including at least one selected from the group consisting of Si, Ge, Te and Sn. A +c-axis direction of the third region includes a component in a direction from the first region toward the second region.

Abstract: An embodiment of a semiconductor device including a silicon carbide layer having a first and a second planes; a first silicon carbide region of first conductivity type in the silicon carbide layer; a second silicon carbide region of second conductivity type in the silicon carbide layer between the first silicon carbide region and the first plane; a third silicon carbide region of the first conductivity type in the silicon carbide layer located between the second silicon carbide region and the first plane; a first electrode located on a side of the first plane; a second electrode located on a side of the second plane; a gate electrode; an aluminum nitride layer containing an aluminum nitride crystal between the second silicon carbide region and the gate electrode; and an insulating layer between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

Abstract: An embodiment is a semiconductor device includes a silicon carbide layer having a first plane and a second plane facing the first plane; a gate electrode; an aluminum nitride layer located between the silicon carbide layer and the gate electrode, the aluminum nitride layer containing an aluminum nitride crystal; a first insulating layer located between the silicon carbide layer and the aluminum nitride layer; and a second insulating layer located between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

Abstract: According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A <000-1> direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.