Abstract: A rectangular substrate 12 composed of c-plane sapphire is prepared. Nickel serving as a catalytic metal is deposited on the entirety of an upper surface of the substrate 12 to form a catalytic metal film 14 (see (a)). The catalytic metal film 14 is patterned by a lithography method into a catalytic metal film 16 having a predetermined shape (see (b)). The temperature of the catalytic metal film 16 is raised to 1000° C. and maintained at 1000° C. for 20 minutes. The temperature of the catalytic metal film 16 is lowered from 1000° C. to 800° C. at a rate of 5° C./min. The temperature of the catalytic metal film 16 is maintained at 800° C. for 15 hours. Thereby, a catalytic metal layer 17 having large grains is provided (see (c)).

Abstract: A rectangular substrate 12 composed of c-plane sapphire is prepared. Nickel serving as a catalytic metal is deposited on the entirety of an upper surface of the substrate 12 to form a catalytic metal film 14 (see (a)). The catalytic metal film 14 is patterned by a lithography method into a catalytic metal film 16 having a predetermined shape (see (b)). The temperature of the catalytic metal film 16 is raised to 1000° C. and maintained at 1000° C. for 20 minutes. The temperature of the catalytic metal film 16 is lowered from 1000° C. to 800° C. at a rate of 5° C./min. The temperature of the catalytic metal film 16 is maintained at 800° C. for 15 hours. Thereby, a catalytic metal layer 17 having large grains is provided (see (c)).

Abstract: Carbon atoms are fed to a catalytic metal particle 10 having a atomic arrangement of triangular lattices in a round (or partly round) of a side wall, and a graphen sheet 18 having a six-membered structure reflecting the atomic arrangement of the triangular lattices is consecutively formed by the metal catalyst, whereby a tubular structure of the carbon atoms is formed. Thus, the chirality of the tubular structure can be controlled by the growth direction of the graphen sheet with respect to the direction of the triangular lattices, and the diameter of the tubular structure can be controlled by the size of the catalytic metal particle.

Abstract: Carbon atoms are fed to a catalytic metal particle 10 having a atomic arrangement of triangular lattices in a round (or partly round) of a side wall, and a graphen sheet 18 having a six-membered structure reflecting the atomic arrangement of the triangular lattices is consecutively formed by the metal catalyst, whereby a tubular structure of the carbon atoms is formed. Thus, the chirality of the tubular structure can be controlled by the growth direction of the graphen sheet with respect to the direction of the triangular lattices, and the diameter of the tubular structure can be controlled by the size of the catalytic metal particle.

Abstract: A semiconductor light emitting device including a transparent compound semiconductor substrate whose lattice constant is inconsistent with the compound semiconductor emitting the light and exhibiting high light output is obtained. A semiconductor light emitting device includes a GaP substrate, an active layer located above GaP substrate and including an n-type AlInGaP layer and a p-type AlInGaP layer, and an ELO layer located between GaP substrate and active layer and formed by epitaxial lateral growth.

Abstract: Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.

Abstract: A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second conductivity type formed on the InGaAlP layer and having a larger band gap than that of the InGaAlP layer, and an electrode formed on a part of the GaAlAs layer. The light emitting diode emits light from a surface at the electrode side except for the electrode. A current from the electrode is widely spread by the GaAlAs layer to widely spread a light emitting region.

Abstract: In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2 <d/.lambda.<0.028.DELTA..sup.-1/2and.DELTA.=(n.sub.a.sup.2 -n.sub.c.sup.2)/2n.sub.a.sup.2.

Abstract: In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2 <d/.lambda.<0.028.DELTA..sup.-1/2and.DELTA.=(n.sub.a.sup.2 -n.sub.c.sup.2)/2n.sub.a.sup.