Patents by Inventor Shigeyasu Kouzuchi

Shigeyasu Kouzuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pressure contact semiconductor device
    Patent number: 4775916
    Abstract: A pressure contact semiconductor device has a semiconductor substrate disposed on a metal post electrode through metal electrode plate, an insulating ring engaged with the periphery of the metal post electrode extends to the periphery of the metal electrode plate and is brought into contact therewith at a certain height with a sufficient contact pressure. The semiconductor substrate is positioned precisely with respect to the metal post electrode so that a gate electrode ring is precisely positioned on a gate electrode film formed on the upper surface of the semiconductor substrate.
    Type: Grant
    Filed: August 21, 1986
    Date of Patent: October 4, 1988
    Assignees: Hitachi Ltd., Hitachi Haramachi Semi-Conductor Ltd.
    Inventors: Shigeyasu Kouzuchi, Shuroku Sakurada, Tadashi Sakaue, Masafumi Ono